CEFF630
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
200V , 7.2A , R
DS(ON)
=300m
Ω
@V
GS
=10V
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220F full-pak for through hole.
D
6
G
G
D
S
S
TO-220F
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation
@Tc=25 C
Derate above 25 C
Operating and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
200
20
7.2
24
5.9
35
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
6-87
3.6
65
C/W
C/W
CEFF630
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
C
ISS
C
OSS
C
RSS
b
Symbol
Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 200V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 3.5A
V
GS
= 10V, V
DS
= 10V
V
DS
= 10V, I
D
= 3.5A
Min Typ
C
Max Unit
200
25
V
µA
100 nA
2
4
270 300
10
3
680
105
40
V
mΩ
A
S
P
F
P
F
P
F
6
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
a
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25V, V
GS
= 0V
f = 1.0MH
Z
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 100V,
I
D
= 5A,
V
GS
= 10V,
R
GEN
= 50
Ω
25
75
70
35
27
60
120
80
50
33
ns
ns
ns
ns
nC
nC
nC
V
DS
= 160V, I
D
=5.9A,
V
GS
= 10V
6-88
4
14
CEFF630
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =5.9A
Min Typ Max Unit
1.5
V
DRAIN-SOURCE DIODE CHARACTERISTICS
a
Notes
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
12
V
GS
=10,8,6,5V
10
25 C
15
-55 C
10
125 C
5
20
6
I
D
, Drain Current (A)
8
6
4
2
0
V
GS
=4V
I
D
, Drain Current (A)
0
0
1
2
3
4
5
6
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
900
3.0
Figure 2. Transfer Characteristics
R
DS(ON)
, Normalized
Drain-Source, On-Resistance
V
GS
=5V
2.5
2.0
1.5
1.0
-55 C
0.5
0
Tj=125 C
25 C
750
Ciss
C, Capacitance (pF)
600
450
300
150
0
0
10
20
30
40
50
Coss
Crss
0
5
10
15
20
25
V
DS
, Drain-to Source Voltage (V)
I
D
, Drain Current(A)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Drain Current and Temperature
6-89
CEFF630
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.15
1.10
1.05
1.0
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75 100 125 150
V
DS
=V
GS
I
D
=250 A
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
ID=250 A
6
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
18
Figure 6. Breakdown Voltage Variation
with Temperature
20.0
V
GS
=0V
g
FS
, Transconductance (S)
12
9
3
3
0
0
5
10
15
20
Is, Source-drain current (A)
15
V
DS
=10V
10.0
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
I
DS
, Drain-Source Current (A)
V
SD
, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
10
I
D
, Drain Current (A)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
90
V
GS
, Gate to Source Voltage (V)
8
6
4
2
0
0
V
DS
=160V
I
D
=5.9A
10
10
R
D
S
(
)
ON
Li
t
mi
1m
10
DC
10
s
0
s
s
ms
1
0.5
1
V
GS
=10V
Single Pulse
Tc=25 C
10
100 200
4
8
12
16
20
24
28 32
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 9. Gate Charge
6-90
Figure 10. Maximum Safe
Operating Area
CEFF630
V
DD
t
on
V
IN
D
V
GS
R
GEN
G
90%
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVERTED
6
S
V
IN
50%
10%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
2
r(t),Normalized Effective
Transient Thermal Impedance
1
D=0.5
0.2
0.1
0.1
P
DM
0.05
t
1
0.02
0.01
SINGLE PULSE
0.01
10
-5
-4
-3
-2
-1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P
DM
* R
JA
(t)
4. Duty Cycle, D=t
1
/t
2
10
10
10
1
10
10
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
6-91
嵌入式系统
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