MAC4DHM
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
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Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Four−Quadrant Triggering
Blocking Voltage to 600 V
On−State Current Rating of 4.0 A RMS at 93°C
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
−40
to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 93°C)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
J
= 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width
≤
10
msec,
T
C
= 93°C)
Average Gate Power
(t = 8.3 msec, T
C
= 93°C)
Peak Gate Current
(Pulse Width
≤
20
msec,
T
C
= 93°C)
Peak Gate Voltage
(Pulse Width
≤
20
msec,
T
C
= 93°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
stg
Value
600
Unit
V
1 2
3
TRIACS
4.0 AMPERES RMS
600 VOLTS
MT2
G
MT1
MARKING
DIAGRAMS
4
DPAK
CASE 369C
STYLE 6
YWW
AC
4DHMG
4.0
40
6.6
2.0
1.0
4.0
5.0
−40
to 110
−40
to 150
A
A
A
2
sec
W
W
A
V
1
°C
°C
2
3
4
1
2
4
DPAK−3
CASE 369D
STYLE 6
3
Y
WW
AC4DHM
G
=
=
=
=
Year
Work Week
Device Code
Pb−Free Package
YWW
AC
4DHMG
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2009
January, 2009
−
Rev. 6
1
Publication Order Number:
MAC4DHM/D
MAC4DHM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
−
Junction−to−Case
−
Junction−to−Ambient
−
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
R
qJC
R
qJA
R
qJA
T
L
Max
3.5
88
80
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On−State Voltage (Note 4)
−
(I
TM
=
±
6.0 A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Non−Trigger Voltage (Continuous dc)
−
(V
D
= 12 V, R
L
= 100
W,
T
J
= 110°C)
All Four Quadrants
Holding Current (V
D
= 12 V, Gate Open, Initiating Current =
±
200 mA)
Latching Current
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
(V
D
= 12 V, I
G
= 5.0 mA)
(V
D
= 12 V, I
G
= 5.0 mA)
(V
D
= 12 V, I
G
= 5.0 mA)
(V
D
= 12 V, I
G
= 10 mA)
V
TM
I
GT
−
−
−
−
−
0.5
0.5
0.5
0.5
0.1
−
−
−
−
−
1.3
1.8
2.1
2.4
4.2
0.62
0.57
0.65
0.74
0.4
1.5
1.75
5.2
2.1
2.2
1.6
5.0
5.0
5.0
10
V
1.3
1.3
1.3
1.3
−
15
10
10
10
10
V
mA
mA
V
mA
T
J
= 25°C
T
J
= 110°C
I
DRM,
I
RRM
mA
−
−
−
−
0.01
2.0
Symbol
Min
Typ
Max
Unit
V
GT
V
GD
I
H
I
L
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
D
= 200 V, I
TM
= 1.8 A, Commutating dv/dt = 1.0 V/msec,
T
J
= 110°C, f = 250 Hz, CL = 5.0
mfd,
LL = 80 mH, RS = 56
W,
CS = 0.03
mfd)
With snubber see Figure 11
Critical Rate of Rise of Off−State Voltage
(V
D
= 0.67 X Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 110°C)
di/dt(c)
−
3.0
−
A/ms
dv/dt
20
−
−
V/ms
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
ORDERING INFORMATION
Device
MAC4DHM−001
MAC4DHM−001G
MAC4DHMT4
MAC4DHMT4G
Package Type
DPAK−3
DPAK−3
(Pb−Free)
DPAK
DPAK
(Pb−Free)
Package
369D
369D
369C
369C
Shipping
†
75 Units / Rail
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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MAC4DHM
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off−State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off−State Voltage
Peak Reverse Blocking Current
Maximum On−State Voltage
Holding Current
Quadrant 3
MainTerminal 2
−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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MAC4DHM
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
110
6.0
180°
5.0
α
4.0
a
= CONDUCTION ANGLE
3.0
2.0
a
= 30°
1.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
60°
α
90°
120°
dc
105
a
= 30°
60°
90°
100
α
95
α
120°
180°
90
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
a
= CONDUCTION ANGLE
dc
4.0
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
TYPICAL @ T
J
= 25°C
10
MAXIMUM @ T
J
= 110°C
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
100
1.0
0.1
Z
qJC(t)
= R
qJC(t)
Sr(t)
1.0
MAXIMUM @ T
J
= 25°C
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0.01
0.1
1.0
10
100
1000
10 K
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
8.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT, GATE TRIGGER CURRENT (mA)
7.0
6.0
5.0
4.0
Q2
3.0
Q1
2.0
1.0
0
-40 -25
-10
5.0
20
35
50
65
80
95
110
Q3
Q4
1.0
Q4
Q1
0.8
Q2
0.6
Q3
0.4
0.2
-40 -25
-10
5.0
20
35
50
65
80
95
110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
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MAC4DHM
5.0
12
10
8.0
6.0
4.0
IH , HOLDING CURRENT (mA)
IL, LATCHING CURRENT (mA)
4.0
3.0
MT2 NEGATIVE
2.0
MT2 POSITIVE
1.0
0
-40 -25
Q2
Q4
Q3
2.0 Q1
0
-10
5.0
20
35
50
65
80
95
110
-40 -25
-10
5.0
20
35
50
65
80
95
110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
40
35
STATIC dv/dt (V/
m
s)
30
25
20
15
10
5
100
1000
GATE-MT1 RESISTANCE (OHMS)
10 K
MAC4DHM
dv/dt(c), CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/
m
s)
V
D
= 400 V
T
J
= 110°C
10
V
PK
= 400 V
T
J
= 110°C
100°C
90°C
1.0
t
w
V
DRM
f=
1
2 t
w
6f I
TM
1000
(di/dt)
c
=
0.1
0
1.0
2.0
3.0
4.0
5.0
6.0
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Minimum Exponential Static dv/dt
versus Gate−MT1 Resistance
Figure 10. Typical Critical Rate of Rise of
Commutating Voltage
L
L
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
MEASURE
I
R
S
1N4007
-
C
S
MT2
1N914 51
W
G
MT1
ADJUST FOR +
di/dt
(c)
CHARGE
200 V
NON‐POLAR
C
L
Note: Component values are for verification of rated (di/dt)
c
. See AN1048 for additional information.
Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
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