TGA2512-SM
4 - 14 GHz Balanced LNA
Key Features
•
•
•
•
•
•
•
•
Frequency Range: 4 – 14.2 GHz
2.3 dB Nominal Noise Figure
25 dB Nominal Gain
15 dB AGC Range
13 dBm Nominal P1dB
24dBm Nominal OIP3
Bias: 5 V, 160 mA Gate Bias
5 V, 90 mA Self Bias
Package Dimensions:
4.0 x 4.0 x 0.9 mm
X-Band Radar
EW, ECM
Point-to-Point Radio
Self Bias
Gate Bias
•
•
•
Primary Applications
Product Description
The TriQuint TGA2512-SM is a packaged X-
band balanced LNA with AGC amplifier for EW,
ECM, and RADAR receiver or driver amplifier
applications. The TGA2512-SM provides
excellent noise performance with typical
midband NF of 2.3dB, and high gain, 25dB from
4-14.2GHz
The TGA2512-SM is designed for maximum
ease of use. TGA2512-SM can handle up to
21dBm input power reliably, while the build-in
gain control provides 15dB of typical gain
control range. The part can be used in self-
biased mode, with a single +5V supply
connection, or in gate biased mode, allowing
the user to control the current for a particular
application.
In self-biased mode the TGA2512-SM achieves
6dBm typical P1dB, while in gate-biased mode
the typical P1dB is over 13dBm.
Lead-Free & RoHS compliant.
Evaluation boards are available.
Measured Data
Bias Conditions: Self Bias, Vd = 5V, Id = 90mA
30
6
10
0
-10
-20
-30
4
5
6
7 8 9 10 11 12 13 14
Frequency (GHz)
4
NF
IRL
ORL
3
2
1
0
Bias Conditions: Gate Bias, Vd = 5V, Id = 160mA
30
6
Gain
10
0
-10
-20
-30
4
5
6
7
8
9
10 11 12 13 14
Frequency (GHz)
4
NF
IRL
ORL
3
2
1
0
Datasheet subject to change without noitce
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
April 2012 © Rev D
Noise Figure (dB)
1
Spar & NF (dB)
20
5
Noise Figure (dB)
Spar & NF (dB)
20
Gain
5
TGA2512-SM
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
Vd
Vg
Id
⏐Ig⏐
P
IN
P
D
T
CH
T
STG
1/
2/
3/
4/
5/
PARAMETER
Drain Voltage
Gate Voltage Range
Drain Current (gate biased)
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
Gate Bias: [4 + (0.009)(Id)] V
Self Bias: [3.5 + (0.022)(Id)] V
-1 TO +0.5 V
240 mA
7.04 mA
21 dBm
1.56 W
200 °C
260 °C
-65 to 150 °C
NOTES
2/ 3/
2/
2/ 4/
5/
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
Unit for Id is mA
When operated at this bias condition with a base plate temperature of 85
°C,
the median
life is 9.3E4 hours.
Junction operating temperature will directly affect the device median time to failure (Tm).
For maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
April 2012 © Rev D
2
TGA2512-SM
TABLE II-A
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
PARAMETER
Frequency Range
Drain Voltage, Vd
Drain Current, Id
Gate Voltage, Vg
Small Signal Gain, S21
Input Return Loss, S11
Output Return Loss, S22
Noise Figure, NF
Output Power @ 1dB Gain Compression,
P1dB
OIP3
Temperature Gain Coefficent
Self Bias
TGA2512-1-SM
4 – 14.2
5.0
160
-
22
-10
-20
2.3
6
16
-0.02
Gate Bias
TGA2512-2-SM
4 – 14.2
5.0
160
-0.1
25
-10
-20
2.3
13
24
-0.02
UNITS
GHz
V
mA
V
dB
dB
dB
dB
dBm
dBm
dB/°C
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
TABLE II-B
TGA2512-2-SM ELECTRICAL CHARACTERISTICS
(Vd=5V, Id=160mA, Vctrl=0V, Ta = 25
0
C, Nominal)
PARAMETER
Frequency Range
Drain Current, Id
Gate Voltage, Vg
Small Signal Gain, S21
Input Return Loss, S11
Output Return Loss, S22
Noise Figure, NF
Output Power @ 1dB Gain Compression,
P1dB
OIP3
Min
11
Typ
160
Max
14.2
200
0.2
UNITS
GHz
mA
V
dB
dB
dB
-0.4
19
-7
-7
-0.1
24
-12
-12
3
4.5
dB
dBm
dBm
10
16
13
22
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
April 2012 © Rev D
3
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
