®
BYT30G-400
HIGH EFFICIENCY FAST RECOVERY DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
trr
V
F
FEATURES AND BENEFITS
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
SMD PACKAGE
DESCRIPTION
30 A
400 V
50 ns
1.4 V
1&3
4
4
Single rectifier suited for freewheeling in convert-
ers and motor control circuits.
Packaged in D
2
PAK, this surface mount device is
intended for use in high frequency inverters, free
wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS
O
bs
Symbol
V
RRM
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
1
2
uc
d
3
s)
t(
D
2
PAK
(Plastic)
Parameter
Value
400
50
Tc=100°C
δ
= 0.5
tp=10ms
sinusoidal
tp = 5µs
f = 5 kHz
30
350
280
- 40 to + 150
Unit
V
A
A
A
A
°C
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak forward current
Storage and junction temperature range
I
F(RMS)
I
F(AV)
I
FSM
I
FRM
Tstg
Tj
October 1999 - Ed: 3A
1/5
BYT30G-400
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
Value
1
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameter
Reverse leakage current
Test Conditions
V
R
= V
RRM
T
j
= 25°C
T
j
= 100°C
V
F **
Forward voltage drop
* tp = 5 ms,
δ<
2 %
** tp = 380
µs, δ
< 2 %
Min.
Typ.
Max.
35
6
1.4
1.5
Unit
µA
mA
I
F
= 30 A
I
F
= 30 A
T
j
= 100°C
T
j
= 25°C
Pulse test :
To evaluate the conduction losses use the following equation :
P = 1.1 x I
F(AV)
+ 0.0095 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
t
rr
Parameter
Reverse recovery
time
Test Conditions
T
j
= 25°C
Irr = 0.25 A
T
j
= 25°C
dI
F
/dt = -15A/µs
TURN-OFF SWITCHING CHARACTERISTICS
Symbol
t
IRM
Maximum reverse
recovery time
Maximum reverse
recovery current
Turn-off
overvoltage
coefficient
I
RM
b
O
C factor
et
l
so
ro
P
e
Parameter
uc
d
s)
t(
O
-
I
F
= 0.5A
I
R
= 1A
I
F
= 1A
V
R
=
30V
so
b
te
le
ro
P
uc
d
50
s)
t(
Unit
ns
V
Min.
Typ.
Max.
100
Test Conditions
dI
F
/dt = -120A/µs
dI
F
/dt = -240A/µs
dI
F
/dt = -120A/µs
dI
F
/dt = -240A/µs
Min.
Typ.
Max.
75
Unit
ns
T
j
= 100°C
I
F
= 30 A
V
CC
= 200 V
Lp < 0.05
µH
50
9
12
3.3
/
ns
T
j
= 100°C
I
F
= I
F(AV)
V
CC
= 60 V
Lp = 1
µH
dI
F
/dt = -30A/µs
PIN OUT configuration in D
2
PAK:
2/5
BYT30G-400
Fig.1 :
Average forward power dissipation versus
average forward current.
P F(av)(W)
=0.5
=0.2
=0.1
=0.05
T
Fig.2 :
Peak current versus form factor.
55
50
45
40
35
30
25
20
15
10
5
I M(A)
500
=1
450
400
P=20W
T
I
M
350
300
250
200
150
100
50
P=30W
P=40W
=tp/T
tp
I F(av)(A)
5
10
15
20
25
=tp/T
tp
0
0
30
35
40
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig.3 :
Forward voltage drop versus forward cur-
rent (maximum values).
VFM(V)
Tj=100
o
C
Fig.4 :
Relative variation of thermal impedance
junction to case versus pulse duration.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
O
Fig.5 :
Non repetitive surge peak forward current
versus overload duration.
IM(A)
bs
et
l
o
r
P
e
1
od
uc
s)
t(
I FM(A)
O
-
so
b
K
1
te
le
)
ro
P
uc
d
s)
t(
Zth(j-c) (tp.
K =
Rth(j-c)
=0.5
=0.2
=0.1
0.5
0.2
T
Single pulse
tp(s)
10
100
=tp/T
tp
0.1
0.001
0.01
0.1
1
Fig.6 :
Average current versus ambient tempera-
ture. (δ: 0.5)
I F(av)(A)
Rth(j-a)=Rth(j-c)
250
200
35
30
25
=0.5
T
150
Tc=25
o
C
20
15
=tp/T
100
Tc=60
o
C
tp
IM
10
5
Rth(j-a)=15
o
C/W
50
t
=0.5
Tc=100
o
C
t(s)
0.01
0.1
1
0
0
Tamb(
o
C)
20
40
60
80
100
120
140
160
0
0.001
3/5
BYT30G-400
Fig.7 :
Reverse recovery charge versus dI
F
/dt.
Fig.8 :
Forward recovery times versus dI
F
/dt.
Fig.9 :
Peak reverse current versus dI
F
/dt.
Fig.10 :
Peak forward voltage versus dI
F
/dt.
bs
O
Fig.11:
Dynamic parameters versus junction tem-
perature.
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
4/5
BYT30G-400
PACKAGE MECHANICAL DATA
D
2
PAK (Plastic)
REF.
A
E
L2
C2
D
L
L3
A1
B2
B
G
A2
C
R
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
FOOT PRINT
(in millimeters)
16.90
10.30
b
O
et
l
so
ro
P
e
uc
d
s)
t(
O
-
so
b
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
te
le
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
2.49
2.69
0.098
0.106
0.03
0.23
0.001
0.009
0.70
0.93
0.027
0.037
1.14
1.70
0.045
0.067
0.45
0.60
0.017
0.024
1.23
1.36
0.048
0.054
8.95
9.35
0.352
0.368
10.00
10.40
0.393
0.409
4.88
5.28
0.192
0.208
15.00
15.85
0.590
0.624
1.27
1.40
0.050
0.055
1.40
1.75
0.055
0.069
2.40
3.20
0.094
0.126
0.40 typ.
0.016 typ.
0°
8°
0°
8°
ro
P
uc
d
s)
t(
5.08
1.30
3.70
8.90
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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