AUTOMOTIVE GRADE
Advanced Process Technology
Optimized for Class D Audio Amplifier and High Speed
Switching Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 100W per Channel into 8 Load
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
AUIRF7640S2TR
Automotive DirectFET
®
Power MOSFET
V
(BR)DSS
R
DS(on)
typ.
max.
R
G (typical)
Q
g (typical)
60V
27m
36m
3.5
7.3nC
Applicable DirectFET
®
Outline and Substrate Outline
SB
Description
SC
M2
M4
SB
DirectFET
®
ISOMETRIC
L4
L6
L8
®
The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
packaging
®
platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
®
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize
thermal transfer in automotive power systems.
®
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
®
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and
resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that
accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier and other high speed switching
systems.
Base Part Number
Package Type
AUIRF7640S2
DirectFET Small Can
Absolute Maximum Ratings
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
AUIRF7640S2TR
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
E
AS
E
AS
(Tested)
I
AR
E
AR
T
P
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
60
±20
21
15
5.8
77
84
30
2.4
38
57
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-9-30
AUIRF7640S2TR
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Can
R
J-Can
Junction-to-PCB Mounted
R
J-PCB
Linear Derating Factor
Typ.
–––
12.5
20
–––
1.4
0.2
Max.
63
–––
–––
5.0
–––
Units
°C/W
W/°C
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
––– 0.10 ––– V/°C
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
–––
27
36
Static Drain-to-Source On-Resistance
R
DS(on)
m
V
GS(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
Gate Threshold Voltage Coefficient
–––
-11
––– mV/°C
V
GS(th)
/T
J
gfs
Forward Transconductance
9.3
–––
–––
S
R
G
Internal Gate Resistance
–––
3.5
5.0
–––
–––
5.0
Drain-to-Source Leakage Current
µA
I
DSS
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Q
g
Total Gate Charge
–––
7.3
11
Q
gs1
Gate-to-Source Charge
–––
1.5
–––
Q
gs2
Gate-to-Source Charge
–––
0.9
–––
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
3.0
–––
Q
godr
Gate Charge Overdrive
–––
1.9
–––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
–––
3.9
–––
Q
oss
Output Charge
–––
5.3
–––
nC
t
d(on)
Turn-On Delay Time
–––
4.0
–––
t
r
Rise Time
–––
12
–––
ns
t
d(off)
Turn-Off Delay Time
–––
6.3
–––
t
f
Fall Time
–––
6.2
–––
C
iss
Input Capacitance
–––
450
–––
C
oss
Output Capacitance
–––
160
–––
C
rss
Reverse Transfer Capacitance
–––
48
–––
pF
C
oss
Output Capacitance
–––
610
–––
C
oss
Output Capacitance
–––
120
–––
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 13A
V
DS
= V
GS
, I
D
= 25µA
V
DS
= 50V, I
D
= 13A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
V
DS
= 30V
V
GS
= 10V
I
D
= 13A
See Fig. 6 and 17
V
DS
= 16V, V
GS
= 0V
V
DD
= 30V
I
D
= 13A
R
G
= 6.8
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 48V, ƒ = 1.0 MHz
Notes
through
are on page 3
2
2015-9-30
AUIRF7640S2TR
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
26
24
21
A
84
1.3
39
36
V
ns
nC
Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 13A, V
GS
= 0V
T
J
= 25°C, I
F
= 13A, V
DD
= 25V
dv/dt = 100A/µs
D
G
S
Diode Characteristics
Symbol
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
Diode Forward Voltage
V
SD
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Surface mounted on 1 in.
square Cu board (still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET
®
Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.454mH, R
G
= 25, I
AS
= 13A.
Pulse width
400µs; duty cycle
2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R
is measured at T
J
of approximately 90°C.
3
2015-9-30
100
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
AUIRF7640S2TR
100
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
1
BOTTOM
10
BOTTOM
0.1
1
5.0V
0.01
5.0V
60µs
PULSE WIDTH
Tj = 25°C
0.1
10
100
60µs
PULSE WIDTH
Tj = 175°C
0.1
1
10
100
0.001
0.1
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
ID = 13A
80
Fig. 2
Typical Output Characteristics
m
R DS (on), Drain-to -Source On Resistance (
)
)
RDS(on), Drain-to -Source On Resistance (m
100
100
Vgs = 10V
80
TJ = 125°C
60
TJ = 125°C
60
40
20
TJ = 25°C
0
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
VGS, Gate -to -Source Voltage (V)
40
TJ = 25°C
20
0
10
20
30
40
50
ID, Drain Current (A)
Fig. 3
Typical On-Resistance vs. Gate Voltage
100
Fig. 4
Typical On-Resistance vs. Drain Current
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 13A
2.0
ID, Drain-to-Source Current(A)
VGS = 10V
10
1
TJ = -40°C
TJ = 25°C
TJ = 175°C
1.5
0.1
VDS = 25V
0.01
2
4
6
8
10
12
14
1.0
60µs
PULSE WIDTH
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Transfer Characteristics
4
Fig 6.
Normalized On-Resistance vs. Temperature
2015-9-30
6.5
VGS(th), Gate threshold Voltage (V)
100
TJ = -40°C
TJ = 25°C
TJ = 175°C
10
AUIRF7640S2TR
5.5
4.5
3.5
ID = 25µA
ID = 250µA
ID = 1.0mA
D = 1.0A
ISD, Reverse Drain Current (A)
1
2.5
VGS = 0V
0.1
1.5
-75 -50 -25
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig. 7
Typical Threshold Voltage vs.
Junction Temperature
18
Gfs , Forward Transconductance (S)
Fig 8.
Typical Source-Drain Diode Forward Voltage
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
16
14
TJ = 25°C
C, Capacitance (pF)
12
10
8
6
4
2
0
0
4
8
12
16
20
24
ID,Drain-to-Source Current (A)
VDS = 5.0V
380µs PULSE WIDTH
TJ = 175°C
1000
C iss
Coss
100
C rss
10
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 9.
Typical Forward Trans conductance vs. Drain Current
14
ID = 13A
VGS, Gate-to-Source Voltage (V)
Fig 10.
Typical Capacitance vs. Drain-to-Source Voltage
24
20
ID, Drain Current (A)
12
10
8
6
4
2
0
0
2
VDS = 80V
VDS = 50V
VDS= 20V
16
12
8
4
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
4
6
8
10
QG, Total Gate Charge (nC)
Fig 11.
Typical Gate Charge vs.
Gate-to-Source Voltage
5
Fig 12.
Maximum Drain Current vs. Case Temperature
2015-9-30
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