Load Switch, Battery Switch, PA Switch and Charger
Switch for Portable Devices
3
4
Marking Code
BC
XXX
Lot Traceability
and Date Code
Part #
Code
D
P-Channel MOSFET
G
S
8
7
6
5
Bottom
View
Ordering Information:
Si5481DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
- 20
±8
- 12
a
- 12
a
- 9.7
b, c
- 7.8
b, c
- 20
- 14.8
- 2.6
b, c
17.8
11.4
3.1
b, c
2
b, c
- 55 to 150
260
A
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
Continuous Source-Drain Diode Current
I
DM
I
S
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
b, f
t
≤
5s
Steady State
Symbol
R
thJA
R
thJC
Typical
30
5.5
Maximum
40
7
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
http://www.vishay.com/ppg?73257
). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W.
Document Number: 73777
S-81448-Rev. C, 23-Jun-08
www.vishay.com
1
New Product
Si5481DU
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward
Transconductance
a
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 6.5 A
V
GS
= - 2.5 V, I
D
= - 5.7 A
V
GS
= - 1.8 V, I
D
= 2.4 A
V
DS
= - 10 V, I
D
= - 6.5 A
Min.
- 20
Typ.
Max.
Unit
V
- 15.5
2.5
- 0.4
-1
± 100
-1
- 10
20
0.018
0.024
0.033
25
1610
0.022
0.029
0.041
mV/°C
V
nA
µA
A
Ω
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 9.7 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 9.7 A
f = 1 MHz
V
DD
= - 10 V, R
L
= 1.3
Ω
I
D
≅
- 7.8 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
300
200
33
20
2.8
5.1
8
13
50
90
167
6
20
75
135
250
15
40
135
250
- 14.8
20
- 0.8
30
17
14
16
- 1.2
60
30
50
30
pF
nC
Ω
ns
V
DD
= - 10 V, R
L
= 1.3
Ω
I
D
≅
- 7.8 A, V
GEN
= - 8 V, R
g
= 1
Ω
25
90
167
T
C
= 25 °C
I
S
= - 7.8 A, V
GS
= 0 V
A
V
ns
nC
ns
I
F
= - 7.8 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73777
S-81448-Rev. C, 23-Jun-08
New Product
Si5481DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
20
V
GS
= 5
V
thru 2
V
16
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
8
T
A
= 25 °C, unless otherwise noted
10
12
1.5
V
8
6
4
T
C
= 125 °C
2
T
C
= 25 °C
4
1
V
0
0.0
0.4
0.8
1.2
1.6
2.0
0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.08
2500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
2000
0.06
C - Capacitance (pF)
C
iss
1500
0.04
V
GS
= 1.8
V
V
GS
= 2.5
V
1000
0.02
500
V
GS
= 4.5
V
C
rss
0.00
0
4
8
12
16
20
0
0
4
8
12
16
20
C
oss
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
8
I
D
= 9.7 A
V
G S
- Gate-to-So
u
rce
V
oltage (
V
)
1.4
R
DS(on)
- On-Resistance
(
N
ormalized)
6
V
DS
= 10
V
V
DS
= 16
V
4
1.6
I
D
= 6.5 A
Capacitance
V
GS
= 4.5
V,
2.5
V,
1.8
V
1.2
1.0
2
0.8
0
0
5
10
15
20
25
30
35
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73777
S-81448-Rev. C, 23-Jun-08
www.vishay.com
3
New Product
Si5481DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
20
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.08
I
D
= 6.5 A
0.06
10
I
S
- So
u
rce C
u
rrent (A)
0.04
T
A
= 125 °C
T
J
= 150 °C
T
J
= 25 °C
0.02
T
A
= 25 °C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.9
40
On-Resistance vs. Gate-to-Source Voltage
0.8
30
0.7
V
GS(th)
(
V
)
Po
w
er (
W
)
20
0.6
0.5
10
0.4
0.3
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
100 ms
1s
10 s
BVDSS limited
DC
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73777
S-81448-Rev. C, 23-Jun-08
New Product
Si5481DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
28
24
Po
w
er Dissipation (
W
)
20
16
Package Limited
12
8
4
0
0
25
50
75
100
125
150
T
A
= 25 °C, unless otherwise noted
18
16
14
I
D
- Drain C
u
rrent (A)
12
10
8
6
4
2
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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