RF Bipolar Transistors RF Transistor
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ASI [ASI Semiconductor, Inc] |
产品种类 Product Category | RF Bipolar Transistors |
RoHS | Details |
Transistor Type | Bipolar Power |
技术 Technology | Si |
Transistor Polarity | NPN |
DC Collector/Base Gain hfe Min | 10 |
Collector- Emitter Voltage VCEO Max | 30 V |
Emitter- Base Voltage VEBO | 3 V |
Continuous Collector Current | 8 A |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 200 C |
安装风格 Mounting Style | Screw |
封装 / 箱体 Package / Case | M173 |
系列 Packaging | Tray |
Operating Frequency | 860 MHz |
类型 Type | RF Bipolar Power |
NumOfPackaging | 1 |
Pd-功率耗散 Pd - Power Dissipation | 155 W |
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