VS-45L(R), VS-150K(R), VS-150KS(R) Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 150 A
FEATURES
• Alloy diode
• High current carrying capability
• High surge current capabilities
• Stud cathode and stud anode version
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-8 (DO-205AA)
TYPICAL APPLICATIONS
• Battery chargers
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
150 A
DO-8 (DO-205AA)
Single
• Welders
• Machine tool controls
• High power drives
• Medium traction applications
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
150
150
235
3570
3740
64
58
100 to 600
-40 to +200
UNITS
A
°C
A
A
kA
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
VS-45L(R)
VS-150K(R)
VS-150KS(R)
20
30
40
60
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
300
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
200
300
400
500
720
35
I
RRM
MAXIMUM
AT T
J
= 175 °C
mA
Revision: 11-Jan-18
Document Number: 93489
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-45L(R), VS-150K(R), VS-150KS(R) Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 142 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
150
150
235
3570
3740
3000
Sinusoidal half wave,
initial T
J
= T
J
maximum
3140
64
58
45
41
640
0.67
0.83
1.42
mW
r
f2
V
FM
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 471 A, T
J
= 25 °C, t
p
= 10 ms sinusoidal wave
0.91
1.33
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
minimum
Mounting torque
45L
maximum
minimum
maximum
minimum
Mounting torque
150K
150KS
maximum
minimum
maximum
Approximate weight
45L
Case style
150K-A
150KS
See dimensions - link at the end of datasheet
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
Not lubricated threads
Lubricated threads
TEST CONDITIONS
VALUES
-40 to 200
0.25
K/W
0.10
14.1 (125)
17.0 (150)
12.2 (108)
15.0 (132)
11.3 (100)
14.1 (125)
9.5 (85)
12.5 (110)
100
3.5
g
oz.
N·m
(lbf · in)
N·m
(lbf · in)
UNITS
°C
DO-30 (DO-205AC)
DO-8 (DO-205AA)
B-42
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.031
0.038
0.048
0.071
0.120
RECTANGULAR CONDUCTION
0.023
0.040
0.053
0.075
0.121
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93489
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-45L(R), VS-150K(R), VS-150KS(R) Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case T
emperature (°C)
200
190
180
Conduction Period
Maximum Allowable Case T
emperature (°C)
200
190
180
Conduction Angle
45L...,150... S
eries
R
thJC
(DC) = 0.25 K/ W
45L..., 150... S
eries
R
thJC
(DC) = 0.25 K/ W
170
160
30°
150
140
0
20
40
60
60°
90°
120°
180°
80 100 120 140 160
170
160
30°
150
140
0
50
100
60°
90°
120°
180°
150
DC
200
250
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
180
160
140
120
100
80
60
180°
120°
90°
60°
30°
RMS Limit
K/ W
.1
=0
A
S
R
th
K/ W
0.2
W
K/
0.3
W
K/
4
0.
6
0.
W
K/
K/
W
0.
8
1
K/
W
elt
-D
1.5
K/
W
aR
2K
/W
Conduction Angle
3 K/
W
40
20
0
0
40
80
45L..., 150... S
eries
T = 200°C
J
120
160
25
50
75
100
125
150
175
200
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
250
200
150
DC
180°
120°
90°
60°
30°
R
th
2
0.
3
0.
W
K/
0.
6
4
0.
A
S
W
K/
K/
W
W
K/
W
K/
.1
=0
a
e lt
-D
K/
W
1K
/W
1.5
K/ W
0. 8
R
100
RMS Limit
Conduc tion Period
2 K/
W
50
45L..., 150... S
eries
T = 200°C
J
3 K/ W
0
0
50
100
150
200
250
25
50
75
100
125
150
175
200
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93489
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-45L(R), VS-150K(R), VS-150KS(R) Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave F
ine
orward Current (A)
4000
3500
3000
2500
2000
1500
1000
500
0.01
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Dura tion.
Initial T = 200°C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
Peak Half S Wave Forward Current (A)
ine
3500
3000
2500
2000
1500
1000
At Any Ra ted Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 200°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
45L..., 150... S
eries
500
1
10
100
Numb er Of Equal Amplitude Half Cycle Current Pulses (N)
45L..., 150... S
eries
0.1
Pulse T
rain Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Ins
tantaneous Forward Current (A)
1000
T = 25°C
J
100
T = 200°C
J
45L...,150... S
eries
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(K/W)
1
S
teady S
tate Value
R
thJC
= 0.25 K7W
(DC Operation)
0.1
45L..., 150... S
eries
0.01
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Jan-18
Document Number: 93489
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-45L(R), VS-150K(R), VS-150KS(R) Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
45
2
L
3
R
4
60
5
1
2
3
4
5
-
-
-
-
-
Vishay Semiconductors product
45 = standard version
L = essential part number
R = stud reverse polarity (anode to stud)
None = stud normal polarity (cathode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
Device code
VS-
1
15
2
0
3
K
4
R
5
60
6
A
7
1
2
3
4
-
-
-
-
Vishay Semiconductors product
15 = essential part number
0 = standard device
Case style:
K = DO-8 (DO-205AA)
KS = B-42
R = stud reverse polarity (anode to stud)
None = stud normal polarity (cathode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
A = essential part number for 150K (omitted for 150KS)
5
6
7
-
-
-
Note
•
For metric device M12 x 1.75 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95314
Revision: 11-Jan-18
Document Number: 93489
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
