VS-6CWQ06FN-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 3.5 A
Base
common
cathode
4
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D-PAK (TO-252AA)
2
Common
cathode
1
3
Anode
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA)
2 x 3.5 A
60 V
See Electrical table
30 mA at 125 °C
150 °C
Common cathode
6 mJ
DESCRIPTION
The VS-6CWQ06FN-M3 surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 A
pk
, T
J
= 25 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
7
60
490
0.61
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-6CWQ06FN-M3
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
50 % duty cycle at T
C
= 133 °C, rectangular waveform
7
A
490
70
6
1
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
3.5
UNITS
Revision: 22-Nov-16
Document Number: 93317
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWQ06FN-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward
voltage drop per leg
See fig. 1
Maximum reverse
leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
3A
V
FM (1)
6A
3A
6A
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
V
R
= Rated V
R
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
30
0.38
34.31
145
5.0
10 000
V
m
pF
nH
V/μs
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
VALUES
0.61
0.76
0.53
0.65
2
mA
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
per leg
per device
R
thJC
TEST CONDITIONS
VALUES
-40 to +150
UNITS
°C
°C/W
g
oz.
DC operation
See fig. 4
4.70
2.35
0.3
0.01
Case style D-PAK (similar to TO-252AA)
6CWQ06FN
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 22-Nov-16
Document Number: 93317
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWQ06FN-M3
www.vishay.com
Vishay Semiconductors
100
T
J
= 150 °C
100
I
R
- Reverse Current (mA)
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1.0
0.1
T
J
= 50 °C
0.01
T
J
= 25 °C
1.0
0.001
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
10
20
30
40
50
60
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
10
20
30
40
50
60
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
P
DM
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Single pulse
(thermal resistance)
0.1
0.00001
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1.0
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 22-Nov-16
Document Number: 93317
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWQ06FN-M3
www.vishay.com
155
150
145
140
135
130
125
120
115
110
3.0
Vishay Semiconductors
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
1.5
1.0
Allowable Case Temperature (°C)
DC
Average Power Loss (W)
2.5
2.0
Square wave (D = 0.50)
80 % rated V
R
applied
DC
0.5
0
See note (1)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
1
2
3
4
5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 22-Nov-16
Document Number: 93317
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWQ06FN-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
-
6
2
C
3
W
4
Q
5
06
6
FN
7
TRL -M3
8
9
Vishay Semiconductors product
2
3
4
4
5
6
7
8
-
-
-
-
-
-
-
Current rating (7 A)
Center tap configuration-
Package identifier:
W = D-PAK
Schottky “Q” series
Voltage rating (06 = 60 V)
FN = TO-252AA
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-6CWQ06FN-M3
VS-6CWQ06FNTR-M3
VS-6CWQ06FNTRL-M3
VS-6CWQ06FNTRR-M3
QUANTITY PER T/R
75
2000
3000
3000
MINIMUM ORDER QUANTITY
3000
2000
3000
3000
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95627
www.vishay.com/doc?95176
www.vishay.com/doc?95033
Revision: 22-Nov-16
Document Number: 93317
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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