Freescale Semiconductor
Technical Data
Document Number: MRFE6VS25L
Rev. 0, 10/2012
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
MRFE6VS25LR5
RF power transistor designed for both narrowband and broadband ISM,
broadcast and aerospace applications operating at frequencies from 1.8 to
2000 MHz. This device is fabricated using Freescale’s enhanced ruggedness
platform and is suitable for use in applications where high VSWRs are
encountered.
Typical Performance:
V
DD
= 50 Volts
Frequency
(MHz)
1.8--30
(1,3)
30--512
(2,3)
512
(4)
Signal Type
Two--Tone
(10 kHz spacing)
Two--Tone
(200 kHz spacing)
Pulse
(100
μsec,
20%
Duty Cycle)
CW
P
out
(W)
25 PEP
25 PEP
25 Peak
G
ps
(dB)
25.0
17.3
25.9
η
D
(%)
50.0
32.0
74.0
IMD
(dBc)
--28
--32
—
1.8-
-2000 MHz, 25 W, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
512
(4)
25
26.0
75.0
—
NI-
-360-
-2
Load Mismatch/Ruggedness
Frequency
(MHz)
30
(1)
Signal Type
CW
VSWR
>65:1
at all Phase
Angles
P
in
(W)
0.11
(3 dB
Overdrive)
0.95
(3 dB
Overdrive)
0.14 Peak
(3 dB
Overdrive)
0.14
(3 dB
Overdrive)
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Test
Voltage
50
Result
No Device
Degradation
Gate 1
2 Drain
512
(2)
CW
512
(4)
Pulse
(100
μsec,
20%
Duty Cycle)
CW
512
(4)
Figure 1. Pin Connections
1. Measured in 1.8--30 MHz broadband reference circuit.
2. Measured in 30--512 MHz broadband reference circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
4. Measured in 512 MHz narrowband test circuit.
Features
•
•
•
•
•
•
•
Wide Operating Frequency Range
Extreme Ruggedness
Unmatched, Capable of Very Broadband Operation
Integrated Stability Enhancements
Low Thermal Resistance
Extended ESD Protection Circuit
In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13 inch Reel.
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
MRFE6VS25LR5
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Symbol
R
θJC
Z
θJC
Value
--0.5, +133
--6.0, +10
--65 to +150
--40 to +150
--40 to +225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 81°C, 25 W CW, 50 Vdc, I
DQ
= 10 mA, 512 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 77°C, 25 W Peak, 100
μsec
Pulse Width,
20% Duty Cycle, 50 Vdc, I
DQ
= 10 mA, 512 MHz
Value
(2,3)
1.4
0.32
Unit
°C/W
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2000 V
B, passes 200 V
IV, passes 1200 V
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 50 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 85
μAdc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 10 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 210 mAdc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.17
14.7
39.0
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.0
—
2.0
2.4
0.23
2.5
3.0
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
133
—
—
—
140
—
—
400
—
2
7
nAdc
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
MRFE6VS25LR5
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 10 mA, P
out
= 25 W Peak (5 W Avg.), f = 512 MHz,
Pulse, 100
μsec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
Frequency
(MHz)
512
Signal
Type
Pulse
(100
μsec,
20% Duty Cycle)
CW
G
ps
η
D
IRL
P
in
(W)
0.14 Peak
(3 dB Overdrive)
0.14
(3 dB Overdrive)
24.5
70.0
—
25.9
74.0
--16
27.5
—
--10
dB
%
dB
Load Mismatch/Ruggedness
(In Freescale Test Fixture, 50 ohm system) I
DQ
= 150 mA
VSWR
>65:1
at all Phase Angles
Test Voltage, V
DD
50
Result
No Device
Degradation
MRFE6VS25LR5
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
100
C
iss
C
oss
C, CAPACITANCE (pF)
10
NORMALIZED V
GS(Q)
1.07
1.06
I
DQ
= 10 mA
1.05
50 mA
1.04
1.03
1.02 100 mA
1.01
150 mA
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
--50
--25
0
V
DD
= 50 Vdc
1
C
rss
0.1
0
Measured with
±30
mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
25
50
75
100
T
C
, CASE TEMPERATURE (°C)
I
DQ
(mA)
10
50
100
150
Slope (mV/°C)
--2.16
--1.79
--1.76
--1.68
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
10
8
I
D
= 0.55 Amps
10
7
MTTF (HOURS)
V
DD
= 50 Vdc
10
6
0.69 Amps
0.83 Amps
10
5
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE: For pulse applications or CW conditions, use the MTTF
calculator referenced above.
Figure 4. MTTF versus Junction Temperature - CW
-
MRFE6VS25LR5
4
RF Device Data
Freescale Semiconductor, Inc.
512 MHz NARROWBAND PRODUCTION TEST FIXTURE
C1
C9
C10
C3
C2
B1
C4
L1
CUT OUT AREA
L2
C13
C11
C15
L3
C12
C14
B2
C5
C6
C7
C8
MRFE6VS25L
Rev. 3
Figure 5. MRFE6VS25LR5 Narrowband Test Circuit Component Layout — 512 MHz
Table 5. MRFE6VS25LR5 Narrowband Test Circuit Component Designations and Values — 512 MHz
Part
B1, B2
C1
C2, C9
C3, C10
C4, C12, C15
C5
C6
C7
C8
C11
C13
C14
L1
L2
L3
PCB
Description
Long Ferrite Beads
22
μF,
35 V Tantalum Capacitor
0.1
μF
Chip Capacitors
0.01
μF
Chip Capacitors
180 pF Chip Capacitors
18 pF Chip Capacitor
2.7 pF Chip Capacitor
15 pF Chip Capacitor
36 pF Chip Capacitor
4.3 pF Chip Capacitor
13 pF Chip Capacitor
470
μF,
63 V Electrolytic Capacitor
33 nH Inductor
12.5 nH Inductor
82 nH Inductor
0.030″,
ε
r
= 2.55
Part Number
2743021447
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MRFE6VS25LR5
RF Device Data
Freescale Semiconductor, Inc.
5
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