N-CHANNEL 100V - 0.115
Ω
- 14A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
IRF530
s
s
s
s
s
s
IRF530
V
DSS
100 V
R
DS(on)
<0.16
Ω
I
D
14 A
TYPICAL R
DS
(on) = 0.115Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
o
C OPERATING TEMPERATURE
TO-220
3
1
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been
designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced
high-efficiency,
high-frequency
isolated
DC-DC
converters for Telecom and Computer applications. It is
also intended for any applications with low gate drive
requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
SOLENOID AND RELAY DRIVERS
s
REGULATOR
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
O
bs
I
D
I
D
V
GS
l
o
te
e
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
2
Parameter
Value
100
100
± 20
14
10
56
60
0.4
20
70
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
I
DM
(•)
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
(•)
Pulse width limited by safe operating area.
August 2002
(1) I
SD
≤14A,
di/dt
≤300A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 14A, V
DD
= 50V
1/8
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C02 MARKING: IRF530 @.
IRF530
THERMAL DATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
2.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 100°C
V
GS
= ± 20 V
Min.
100
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
I
D
= 250 µA
I
D
= 7 A
Min.
2
Typ.
3
DYNAMIC
Symbol
g
fs (*)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
= 15 V
V
DS
= 25V, f = 1 MHz, V
GS
= 0
O
so
b
te
le
ro
P
uc
d
s)
t(
b
-O
I
D
= 7 A
so
te
le
r
P
0.115
od
7
458
68
29
s)
t(
uc
Max.
4
V
0.16
Ω
Max.
S
Unit
Min.
Typ.
Unit
pF
pF
pF
2/8
IRF530
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
I
D
= 7 A
V
DD
= 50 V
R
G
= 4.7
Ω
V
GS
= 10 V
(Resistive Load, Figure 3)
V
DD
= 80V I
D
= 14A V
GS
= 10V
Min.
Typ.
16
25
16
3.7
4.7
21
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
I
D
= 7 A
V
DD
= 50 V
R
G
= 4.7Ω,
V
GS
= 10 V
(Resistive Load, Figure 3)
Min.
Typ.
32
8
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM (
•
)
V
SD (*)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 14 A
V
GS
= 0
Test Conditions
Min.
Typ.
di/dt = 100A/µs
I
SD
= 14 A
V
DD
= 10V
T
j
= 150°C
(see test circuit, Figure 5)
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)
Pulse width limited by safe operating area.
Safe Operating Area
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
te
le
r
P
od
92
230
5
s)
t(
uc
Max.
14
56
A
A
1.6
V
Unit
ns
nC
A
Thermal Impedance
3/8
IRF530
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
bs
O
et
l
o
P
e
ro
uc
d
s)
t(
so
b
-O
.
P
te
le
od
r
s)
t(
uc
5/8
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