VS-SD263C..S50L Series
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Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 375 A
FEATURES
• High power fast recovery diode series
• 4.5 μs recovery time
• High voltage ratings up to 4500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
B-PUK (DO-200AB)
• Case style conform to JEDEC
®
B-PUK (DO-200AB)
• Maximum junction temperature 125 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
375 A
B-PUK (DO-200AB)
Single
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
V
RRM
t
rr
T
J
50 Hz
60 Hz
Range
T
J
T
hs
TEST CONDITIONS
VALUES
375
55
408
5500
5760
3000 to 4500
4.5
125
-40 to +125
V
μs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
30
VS-SD263C..S50L
36
40
45
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
3000
3600
4000
4500
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
3100
3700
4100
4600
50
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Jan-18
Document Number: 93173
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD263C..S50L Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms 50 % V
RRM
Sinusoidal half wave,
t = 8.3 ms reapplied
initial T
J
= T
J
t = 10 ms No voltage
maximum
t = 8.3 ms reapplied
t = 10 ms 50 % V
RRM
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1000 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
VALUES
375 (150)
55 (85)
725
5500
5760
4630
4850
151
138
107
98
1510
1.56
1.71
1.64
1.53
3.20
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
A
Maximum I
2
t for fusing
I
2
t
kA
2
s
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
kA
2
s
V
mW
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
(μs)
5.0
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
1000
dI/dt
(A/μs)
100
(1)
TYPICAL VALUES
AT T
J
= 150 °C
I
FM
V
r
(V)
- 50
t
rr
AT 25 % I
RRM
(μs)
4.5
Q
rr
(μC)
680
I
rr
(A)
dir
dt
t
rr
t
Q
rr
I
RM(REC)
S50
240
Note
(1)
dI/dt = 25 A/μs, T = 25 °C
J
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
UNITS
°C
See dimensions - link at the end of datasheet
-40 to 150
0.11
K/W
0.05
9800 (1000)
N (kg)
230
g
B-PUK (DO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
0.012
0.011
0.014
0.015
0.018
0.018
0.026
0.027
0.045
0.046
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
0.008
0.008
0.014
0.014
0.019
0.019
0.027
0.028
0.046
0.046
TEST CONDITIONS
UNITS
T
J
= T
J
maximum
K/W
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93173
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD263C..S50L Series
www.vishay.com
Vishay Semiconductors
130
Maxim um Allowable Heatsin k Tem perature (°C)
120
110
100
90
80
70
60
50
40
30
20
10
0
200
400
600
800
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
C o nd uc tio n Pe rio d
130
Maxim um Allowable Heatsin k Tem perature ( °C)
120
110
100
90
80
70
60
50
40
30
20
10
0
50
100
SD263C..S50L Series
(Sin gle Side Cooled)
R
t hJ-hs
(DC) = 0.11 K/W
SD263C..S50L Series
(D ouble Side Cooled)
R
thJ-hs
(DC) = 0.05 K/W
C o nduc tio n A ng le
60°
30°
150
90°
120°
180°
200
250
300
Average Forward Curren t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
13 0
M a x im um A llo w a b le H e a t sin k T e m pe ra t u re ( °C )
12 0
11 0
10 0
90
80
70
60
50
40
30
20
10
0
50 1 0 0 15 0 20 0 2 5 0 3 0 0 3 5 0 40 0 45 0
A v e ra g e F o rw a rd C u rr e n t (A )
3 0°
60 °
90°
1 2 0°
1 8 0°
DC
C on du ctio n Pe rio d
1600
Maxim um Average Forward Power Loss (W )
S D 2 6 3 C ..S 5 0 L Se rie s
( Sin g le S id e C o o le d )
R
th J-hs
(D C ) = 0 .1 1 K / W
1400
1200
1000
800
600
400
200
0
0
100
200
300
400
500
Average Forward Current (A)
Co n duc tio n An gle
180°
120°
90°
60°
30°
RM S Lim it
SD263C..S50L Series
T
J
= 125°C
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
13 0
M a x im um A llo w a b le H e a t sin k Te m p e ra t u re (°C )
12 0
11 0
10 0
90
80
70
60
50
40
30
20
10
0
100
30°
M a xim u m A v e ra ge Fo rw a rd P o w e r L os s (W )
SD 2 6 3 C ..S 5 0 L S e rie s
(D o ub le Sid e C o o le d )
R
th J- hs
(D C ) = 0 .0 5 K / W
2 2 50
2 0 00
1 7 50
1 5 00
1 2 50
1 0 00
7 50
5 00
2 50
0
0
10 0 2 00 3 00 40 0 50 0 60 0 7 00 80 0
A v e ra g e F o rw a r d C u rre n t (A )
S D 2 6 3 C ..S 5 0 L Se rie s
T
J
= 1 2 5° C
C o ndu ctio n Pe rio d
C o ndu c tio n A ng le
DC
1 8 0°
1 2 0°
9 0°
6 0°
3 0°
R M S Lim it
6 0° 9 0°
1 2 0°
1 8 0°
20 0
30 0
4 00
5 00
A v e r a g e Fo rw a rd C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93173
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD263C..S50L Series
www.vishay.com
Vishay Semiconductors
10000
Instantaneous Forward Current (A)
55 0 0
P e a k Ha lf Sin e W a v e Fo rw a rd C u rre n t ( A )
A t A n y R a t e d Lo a d C o n d itio n A n d W ith
5 0 % R a te d V
R RM
A p p lie d F o llo w in g S u rg e
50 0 0
In it ia l T
J
= 1 2 5 °C
45 0 0
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
15 0 0
10 0 0
1
10
1 00
N um b er O f E qua l A m p litude H alf C yc le C urren t Pulse s (N )
T
J
= 25°C
T
J
= 125°C
1000
SD263C..S50L Series
100
1
2
3
4
5
6
7
8
Instantan eous Forw ard Voltage (V )
S D 2 6 3 C ..S5 0 L S e r ie s
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
6000
Peak Half Sin e W ave Forward Curren t (A)
T ra n sie n t Th e rm a l Im pe d a n c e Z
thJ-hs
( K / W )
5000
M a xim u m N o n R e pe tit iv e Su rg e C u rre n t
V e r su s P ulse Tr ain D ura tio n .
In itial T
J
= 1 2 5°C
N o V o lt ag e R e a pp lie d
5 0 % R at e d V
RR M
Re ap plie d
1
S t e a d y St a t e V alu e
R
th J- hs
= 0 .1 1 K/ W
(S in gle Sid e C o o le d )
0 .1
R
th J- hs
= 0 .0 5 K/ W
( D o u b le S id e C o o le d )
( D C O p e ra t io n )
4000
3000
0 .0 1
S D 2 6 3 C ..S5 0 L Se rie s
2000
S D 2 6 3 C ..S5 0L Se rie s
1000
0.01
0.1
Pulse Train Duration (s)
1
0 .0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
Sq u a r e W a v e P u lse D u rat io n ( s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
500
450
400
Fo rw a rd R ec o v e ry (V )
350
300
250
200
150
100
50
0
0
2 00
4 00
6 00
80 0
1 00 0
V
FP
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristic
I
T
J
= 1 2 5°C
T
J
= 2 5°C
SD 2 6 3 C ..S 5 0 L Se rie s
1 20 0
1 40 0
1 600
18 00
2 0 00
R a t e O f R ise O f Fo rw a rd C u rre n t - d i/ d t (A / u s)
Fig. 11 - Typical Forward Recovery Characteristics
Revision: 11-Jan-18
Document Number: 93173
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD263C..S50L Series
www.vishay.com
Vishay Semiconductors
1E4
9
M a x im um R e v e rse R e c o v e r y Tim e - Trr (µ s)
8
7
6
5
4
3
I
FM
= 100 0 A
Sine Pu lse
50 0 A
1 50 A
S D 2 6 3 C ..S 5 0 L Se rie s
T
J
= 1 2 5 °C ; V r > 1 0 0 V
Peak Forward Current (A)
6
4
2
1
0 .5
10 jo ule s pe r pu lse
1E3
0 .3
tp
SD 2 6 3 C..S5 0 L Se rie s
Si nu so ida l Pu lse
T
J
= 1 2 5°C , V
RRM
= 1 5 0 0 V
d v /d t = 1 0 0 0 V/ µs
2
10
10 0
10 0 0
1E2
1E 1
1E2
1E3
1E4
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Pulse Basew idth ( µs)
Fig. 12 - Recovery Time Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
1 40 0
M a x im u m Re v e r se R e c o v e r y C h a r ge - Q rr (µ C )
1 20 0
1 00 0
8 00
6 00
4 00
2 00
0
0
50
10 0 1 50 2 00 2 50 30 0
SD 2 6 3 C ..S 5 0 L Se rie s
T
J
= 1 2 5 ° C ; V r > 1 0 0 V
150 A
I
FM
= 1 00 0 A
Sin e Pulse
1E4
500 A
Peak Forward Current (A)
1 5 00 1 00 0 4 00
2 0 00
200
1 00
5 0 Hz
1E3
3000
4000
6 00 0
10000
tp
SD 2 6 3 C ..S5 0 L Se rie s
Si nu so id al Pu l se
T
C
= 5 5° C , V
RR M
= 1 5 0 0 V
d v / dt = 1 0 0 0 V/ u s
1E2
1E 1
1E2
1E3
1E 4
R ate O f Fall O f Fo rwa rd Curre nt - d i/dt ( A/µs)
Pulse Basew idth (µs)
Fig. 13 - Recovery Charge Characteristics
Fig. 16 - Frequency Characteristics
60 0
M a xim u m Re v e rse R e c o v e ry C urre n t - Irr (A )
50 0
40 0
30 0
20 0
10 0
0
0
50
1 00 15 0 20 0 2 50 3 0 0
S D 2 6 3 C ..S5 0 L S e r ie s
T
J
= 1 2 5 °C ; V r > 1 0 0 V
I
FM
= 10 00 A
Sine Pu lse
500 A
1 50 A
1E4
SD 2 6 3 C ..S5 0 L Se r ie s
T rap ezo id al P uls e
T
J
= 1 2 5°C , V
RRM
= 1 5 0 0 V
d v / dt = 1 0 0 0 V /µ s
d i/ d t = 3 0 0 A /µ s
Peak Forward Current (A)
tp
1 0 jo ule s pe r pu lse
1E3
1
0. 5
0.3
4
2
6
1E2
1E1
1E 2
1E3
1E4
Rate O f Fall O f Fo rw ard C urre nt - d i/dt (A /µs)
Pulse Basew idth (µs)
Fig. 14 - Recovery Current Characteristics
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
Revision: 11-Jan-18
Document Number: 93173
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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