This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC−70 package which is designed for low
power surface mount applications.
Features
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Fast t
rr
, < 3.0 ns
Low C
D
, < 2.0 pF
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(T
A
= 25C)
Rating
Reverse Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
Peak Reverse Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
Forward Current
Single
Dual
Peak Forward Current
Single
Dual
Peak Forward Surge Current
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
Symbol
V
R
Value
40
80
40
80
100
150
225
340
500
750
Unit
Vdc
SC−70 (SOT−323)
CASE 419
STYLE 5
CATHODE
3
1
ANODE 2
MARKING DIAGRAM
V
RM
Vdc
Mx M
G
G
I
F
mAdc
Mx = Device Code
x
= T for 141
U for 142
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
Unit
mW
C
C
M1MA142WKT1G
SM1MA142WKT1G
I
FM
mAdc
I
FSM
(Note 1)
mAdc
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Max
150
150
−55
to
+ 150
ORDERING INFORMATION
Device
M1MA141WKT1G
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 SEC
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 9
1
Publication Order Number:
M1MA141WKT1/D
M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G,
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
Characteristic
Reverse Voltage Leakage Current
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
Forward Voltage
Reverse Breakdown Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
Diode Capacitance
Reverse Recovery Time (Figure 1)
2. t
rr
Test Circuit
Condition
V
R
= 35 V
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
mA
Symbol
I
R
Min
−
−
−
40
80
−
−
Max
0.1
0.1
1.2
−
−
2.0
3.0
Unit
mAdc
V
F
V
R
Vdc
Vdc
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100
W,
I
rr
= 0.1 I
R
C
D
t
rr
(Note 2)
pF
ns
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2
M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G,
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
t
r
t
p
I
F
t
R
L
10%
I
rr
= 0.1 I
R
90%
V
R
t
p
= 2
ms
t
r
= 0.35 ns
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
W
OUTPUT PULSE
t
rr
t
A
Figure 1. Recovery Time Equivalent Test Circuit
100
IF, FORWARD CURRENT (mA)
IR , REVERSE CURRENT (A)
10
T
A
= 150C
T
A
= 85C
1.0
T
A
= 125C
10
T
A
= - 40C
T
A
= 85C
0.1
T
A
= 55C
0.01
T
A
= 25C
1.0
T
A
= 25C
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
Figure 2. Forward Voltage
Figure 3. Reverse Current
0.68
CD, DIODE CAPACITANCE (pF)
0.64
0.6
0.56
0.52
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance
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3
M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G,
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
e1
3
H
E
1
2
E
b
e
A
0.05 (0.002)
A1
A2
L
c
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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