UML4N
PNP complex transistor with schottky barrier diode
Datasheet
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Outline
Parameter
Value
SOT-353
SC-88A
V
CEO
I
C
-12V
-500mA
UMT5
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Features
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Inner circuit
1)The 2SA2018 and a diode are housed
independently in a SOT-353 package.
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Application
General purpose small signal amplifier
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Packaging specifications
Part No.
Package
SOT-353
(UMT5)
Package
size
2021
Taping
code
TR
Basic
Reel size Tape width ordering
(mm)
(mm)
unit.(pcs)
180
8
3000
Marking
UML4N
L4
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© 2016 ROHM Co., Ltd. All rights reserved.
1/8
20161214 - Rev.001
UML4N
Datasheet
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Absolute maximum ratings
(T
a
= 25°C)
Pin No.1-5 Diode
Parameter
Average rectified forward current
Forward current surge peak
(60Hz, 1cyc)
Reverse voltage
Junction temperature
Symbol
I
O
I
FSM
V
R
T
j
Value
200
1
30
125
Unit
mA
A
V
℃
Pin No.2-3-4 Transistor
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
I
CP
Junction temperature
T
j
-1
150
A
℃
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-15
-12
-6
-500
Unit
V
V
V
mA
Each element
Parameter
Power dissipation
Range of storage temperature
Symbol
P
D*1,*2
T
stg
Value
150
-55
½
+125
Unit
mW/Total
℃
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© 2016 ROHM Co., Ltd. All rights reserved.
2/8
20161214 - Rev.001
UML4N
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Pin No.1-5 Diode
Values
Parameter
Forward voltage
Reverse current
Symbol
V
R
I
R
Conditions
Min.
I
F
= 200mA
V
R
= 10V
-
-
Typ.
0.40
4.0
Max.
0.50
30
V
μA
Unit
Pin No.2-3-4 Transistor
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Values
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Conditions
Min.
I
C
= -10μA
I
C
= -1mA
I
E
= -10μA
V
CB
= -15V
V
EB
= -6V
-15
-12
-6
-
-
-
270
-
Typ.
-
-
-
-
-
-100
-
260
Max.
-
-
-
-100
-100
-250
680
-
V
V
V
nA
nA
mV
-
MHz
Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -200mA, I
B
= -10mA
h
FE
f
T
V
CE
= -2V, I
C
= -10mA
V
CE
= -2V, I
E
= 10mA,
f = 100MHz
V
CB
= -10V, I
E
= 0A,
f = 1MHz
DC current gain
Transition frequency
Output capacitance
C
ob
-
6.5
-
pF
*1 Each termunal mounted on a reference land.
*2 120mW per element must not be exceeded.
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© 2016 ROHM Co., Ltd. All rights reserved.
3/8
20161214 - Rev.001
UML4N
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Electrical characteristic curves(T
a
=25°C)
<For Diode>
Datasheet
Fig.1 Reverse Current vs.
Reverse Voltage
Fig.2 Forward Current vs.
Forward Voltage
Fig.3 Capacitance Between Terminals
vs. Reverse Voltage
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© 2016 ROHM Co., Ltd. All rights reserved.
4/8
20161214 - Rev.001
UML4N
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Electrical characteristic curves(T
a
=25°C)
<For Transistor>
Datasheet
Fig.4 Ground Emitter Propagation
Characteristics
Fig.5 Typical Output Characteristics
Fig.6 DC Current Gain vs. Collector
Current (I)
Fig.7 DC Current Gain vs. Collector
Current (II)
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© 2016 ROHM Co., Ltd. All rights reserved.
5/8
20161214 - Rev.001