IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
380
80
190
Single
D
FEATURES
500
0.087
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Compliant to RoHS Directive 2002/95/EC
Super-247
APPLICATIONS
G
S
D
G
S
N-Channel MOSFET
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Super-247
IRFPS40N50LPbF
SiHFPS40N50L-E3
IRFPS40N50L
SiHFPS40N50L
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Current
a
T
C
= 25 °C
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 0.86 mH, R
g
= 25
,
I
AS
= 46 A (see fig. 12).
c. I
SD
46 A, dI/dt
550 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
46
29
180
4.3
920
46
54
540
34
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91260
S11-0111-Rev. C, 07-Feb-11
www.vishay.com
1
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case
(Drain)
a
Note
a. R
th
is measured at T
J
approximately 90 °C.
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.23
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
500
-
3.0
-
-
-
-
21
-
-
-
-
-
-
TYP.
-
0.60
-
-
-
-
0.087
-
8110
960
130
11200
240
440
310
-
-
-
0.90
27
170
50
69
MAX.
-
-
5.0
± 100
50
2.0
0.100
-
-
-
-
-
-
-
-
380
80
190
-
-
-
-
-
UNIT
V
V/°C
V
nA
μA
mA
S
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
C
oss eff.
(ER)
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 28 A
b
V
DS
= 50 V, I
D
= 46 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V , f = 1.0 MHz
V
DS
= 400 V , f = 1.0 MHz
V
GS
= 0 V
V
DS
= 0 V to 400
V
c
pF
-
-
V
GS
= 10 V
I
D
= 46 A, V
DS
= 400 V,
see fig. 7 and 15
b
-
-
-
-
-
-
-
nC
f = 1 MHz, open drain
V
DD
= 250 V, I
D
= 46 A,
R
G
= 0.85
,
V
GS
= 10 V,
see fig. 14a and 14b
b
ns
-
-
-
-
-
-
-
-
-
-
-
170
220
705
1.3
9.0
46
A
180
1.5
250
330
1060
2.0
-
V
ns
nC
A
G
S
T
J
= 25 °C, I
S
= 46 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 46 A
T
J
= 125 °C, dI/dt = 100 A/μs
b
T
J
= 25 °C, I
S
= 46 A, V
GS
= 0 V
b
T
J
= 125 °C, dI/dt = 100
T
J
= 25 °C
A/μs
b
Forward Turn-On Time
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
400 μs; duty cycle
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
C
oss
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
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Document Number: 91260
S11-0111-Rev. C, 07-Feb-11
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
100
T
J
= 150
°
C
10
10
1
T
J
= 25
°
C
1
4.5V
0.1
0.01
0.1
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
V DS= 50V
20µs PULSE WIDTH
4
5
6
7
8
9
10
11
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
TOP
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1000
I
D
, Drain-to-Source Current (A)
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
3.0
I
D
= 47A
2.5
2.0
10
4.5V
1.5
1.0
1
0.5
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60
80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91260
S11-0111-Rev. C, 07-Feb-11
www.vishay.com
3
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
1000000
20
V
GS
, Gate-to-Source Voltage (V)
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
I
D
=
47A
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
C, Capacitance(pF)
15
10000
Ciss
10
1000
Coss
100
Crss
5
10
1
10
100
1000
0
0
100
200
300
400
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Q
G
, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
40
35
30
1000
I
SD
, Reverse Drain Current (A)
100
Energy (µJ)
25
20
15
10
5
0
0
100
200
300
400
500
600
T
J
= 150
°
C
10
T
J
= 25
°
C
1
0.1
0.2
V
GS
= 0 V
0.7
1.2
1.7
2.2
VDS, Drain-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig. 8 - Typical Source Drain Diode Forward Voltage
Fig. 6 - Typical Output Capacitance Stored Energy vs. V
DS
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Document Number: 91260
S11-0111-Rev. C, 07-Feb-11
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
50
V
GS
V
DS
R
D
D.U.T.
+
- V
DD
40
R
G
I
D
, Drain Current (A)
10 V
30
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
20
Fig. 10a - Switching Time Test Circuit
V
DS
10
90 %
0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
1
Thermal Response(Z
thJC
)
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91260
S11-0111-Rev. C, 07-Feb-11
www.vishay.com
5
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