VS-60CPH03PbF, VS-60CPH03-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 2 x 30 A FRED Pt
®
Base
common
cathode
2
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified
JEDEC
®
-JESD 47
according
to
TO-247AC
1
3
Anode
Anode
2
1
2
Common
cathode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
DESCRIPTIONS / APPLICATIONS
VS-60CPH03PbF, VS-60CPH03-N3 series are the state of
the art ultrafast recovery rectifiers designed with optimized
performance of forward voltage drop and ultrafast recovery
time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AC
2 x 30 A
300 V
0.92 V
See Recovery table
175 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse
voltage
Average rectified forward current
per leg
total device
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 143 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
300
30
60
300
-65 to +175
°C
A
UNITS
V
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown
voltage,
blocking voltage
Forward
voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package
body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.08
0.92
0.05
20
70
3.5
MAX.
-
1.25
1.00
60
300
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 10-Jul-15
Document Number: 94500
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPH03PbF, VS-60CPH03-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = - 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
-
39
57
2.8
7.5
55
214
MAX.
55
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
0.5
-
0.4
6.0
0.22
-
MAX.
175
0.9
40
-
-
-
12
(10)
g
oz.
kgf cm
(lbf
in)
°C/W
UNITS
°C
60CPH03
Revision: 10-Jul-15
Document Number: 94500
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPH03PbF, VS-60CPH03-N3
www.vishay.com
Vishay Semiconductors
1000
1000
T
J
= 175 °C
I
R
- Reverse Current (µA)
I
F
- Instantaneous
Forward Current (A)
100
T
J
= 150 °C
10
100
T
J
= 175 °C
T
J
= 125 °C
T
J
= 100 °C
1
10
T
J
= 125 °C
0.1
T
J
= 25 °C
1
0.2
T
J
= 25 °C
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
50
100
150
200
250
300
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
10
0
50
100
150
200
250
300
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
Z
thJC
- Thermal Impedance (°C/W)
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 10-Jul-15
Document Number: 94500
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPH03PbF, VS-60CPH03-N3
www.vishay.com
Vishay Semiconductors
50
45
180
Allowable Case Temperature (°C)
RMS limit
Average Power Loss (W)
40
35
30
25
20
15
10
5
0
160
DC
140
Square
wave
(D = 0.50)
Rated
V
R
applied
See note (1)
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
120
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
35
40
45
50
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
80
70
60
1000
I
F
= 30 A, 125 °C
t
rr
(ns)
50
40
30
20
10
100
Q
rr
(nC)
I
F
= 30 A, 125 °C
100
I
F
= 30 A, 25 °C
I
F
= 30 A, 25 °C
1000
10
100
1000
dI
F
/dt (A/µs)
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Revision: 10-Jul-15
Document Number: 94500
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPH03PbF, VS-60CPH03-N3
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
Document Number: 94500
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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