MOSFET N-CH Enhancmnt Mode MOSFET
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | Microchip(微芯科技) |
| 产品种类 Product Category | MOSFET |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | Through Hole |
| 封装 / 箱体 Package / Case | TO-92-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | - 60 V |
| Id - Continuous Drain Current | - 250 mA |
| Rds On - Drain-Source Resistance | 15 Ohms |
| Configuration | Single |
| Channel Mode | Enhancement |
| 系列 Packaging | Cut Tape |
| 系列 Packaging | Reel |
| Transistor Type | 1 P-Channel |
| NumOfPackaging | 2 |
| 工厂包装数量 Factory Pack Quantity | 2000 |
| 单位重量 Unit Weight | 0.016000 oz |
| VP0106N3-G-P005 | VP0106N3-G | VP0106N3-G-P003 | VP0106N3-G-P014 | VP0106N3-P002 | VP0106N3-P014 | VP0106N3-P003 | VP0106N3-G P002 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 60V 8Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 60V 8Ohm | MOSFET 60V 8Ohm | MOSFET 60V 8Ohm | MOSFET N-CH Enhancmnt Mode MOSFET |
| Product Attribute | Attribute Value | - | Attribute Value | Attribute Value | Attribute Value | Attribute Value | Attribute Value | - |
| 制造商 Manufacturer |
Microchip(微芯科技) | - | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | - |
| 产品种类 Product Category |
MOSFET | - | MOSFET | MOSFET | MOSFET | MOSFET | MOSFET | - |
| RoHS | Details | - | Details | Details | N | N | N | - |
| 技术 Technology |
Si | - | Si | Si | Si | Si | Si | - |
| 安装风格 Mounting Style |
Through Hole | - | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | - |
| 封装 / 箱体 Package / Case |
TO-92-3 | - | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 | - |
| Number of Channels | 1 Channel | - | 1 Channel | 1 Channel | 1 Channel | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | - | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | - |
| Vds - Drain-Source Breakdown Voltage | - 60 V | - | - 60 V | - 60 V | - 60 V | - 60 V | - 60 V | - |
| Id - Continuous Drain Current | - 250 mA | - | - 250 mA | - 250 mA | - 250 mA | - 250 mA | - 250 mA | - |
| Rds On - Drain-Source Resistance | 15 Ohms | - | 15 Ohms | 15 Ohms | 8 Ohms | 8 Ohms | 8 Ohms | - |
| Configuration | Single | - | Single | Single | Single | Single | Single | - |
| Channel Mode | Enhancement | - | Enhancement | Enhancement | Enhancement | Enhancement | Enhancement | - |
| Transistor Type | 1 P-Channel | - | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel | - |
| 工厂包装数量 Factory Pack Quantity |
2000 | - | 2000 | 2000 | 2000 | 2000 | 2000 | - |
| 单位重量 Unit Weight |
0.016000 oz | - | 0.016000 oz | 0.016000 oz | 0.007760 oz | 0.007760 oz | 0.007760 oz | - |
| Vgs - Gate-Source Voltage | - | - | 20 V | 20 V | 20 V | 20 V | 20 V | - |
| 最小工作温度 Minimum Operating Temperature |
- | - | - 55 C | - 55 C | - 55 C | - 55 C | - 55 C | - |
| 最大工作温度 Maximum Operating Temperature |
- | - | + 150 C | + 150 C | + 150 C | + 150 C | + 150 C | - |
| Pd-功率耗散 Pd - Power Dissipation |
- | - | 1 W | 1 W | 1 W | 1 W | 1 W | - |
| Typical Turn-Off Delay Time | - | - | 8 ns | 8 ns | 8 ns | 8 ns | 8 ns | - |
| Typical Turn-On Delay Time | - | - | 4 ns | 4 ns | 4 ns | 4 ns | 4 ns | - |
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