PSMN8R0-80YL
20 October 2016
N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product is designed and qualified for use in a wide range of power
supply & motor control equipment.
2. Features and benefits
•
•
•
•
Advanced TrenchMOS provides low R
DSon
and low gate charge
Logic level gate operation
Avalanche rated, 100% tested
LFPAK provides maximum power density in a Power SO8 package
3. Applications
•
•
•
•
•
Synchronous rectification in power supply equipment
Chargers & adaptors with V
out
< 10 V
Fast charge & USB-PD applications
Battery powered motor control
LED lighting & TV backlight
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
[1]
Min
-
-
-
Typ
-
-
-
Max
80
100
238
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
6.3
8.5
mΩ
Dynamic characteristics
Q
GD
I
D
= 25 A; V
DS
= 64 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
-
17.1
-
nC
Nexperia
PSMN8R0-80YL
N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
S
S
G
D
source
source
source
gate
mounting base; connected to
drain
1 2 3 4
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Package
Name
PSMN8R0-80YL
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
Version
SOT669
Type number
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
P
tot
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; T
mb
= 100 °C;
Fig. 2
I
DM
T
stg
T
j
I
S
I
SM
peak drain current
storage temperature
junction temperature
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 3
[1]
[1]
Conditions
25 °C ≤ T
j
≤ 175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
Max
80
80
20
238
100
75
423
175
175
Unit
V
V
V
W
A
A
A
°C
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
[1]
-
-
100
423
A
A
PSMN8R0-80YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
20 October 2016
2 / 12
Nexperia
PSMN8R0-80YL
N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56
Symbol
E
DS(AL)S
Parameter
non-repetitive drain-source
avalanche energy
Conditions
I
D
= 100 A; V
sup
≤ 80 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[2][3]
Min
-
Max
148
Unit
mJ
Avalanche ruggedness
[1]
[2]
[3]
120
P
der
(%)
80
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
03aa16
I
D
(A)
100
80
60
120
003aaj245
(1)
40
40
20
0
0
50
100
150
T
mb
(°C)
200
0
0
30
60
90
120
150
T
mb
(°C)
180
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
(1) Capped at 100A due to package
Fig. 2.
Continuous drain current as a function of
mounting base temperature
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
10
2
t
p
= 10 us
100 us
10
DC
1
1 ms
10 ms
100 ms
003aaj247
10
-1
1
10
10
2
V
DS
(V)
10
3
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN8R0-80YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
20 October 2016
3 / 12
Nexperia
PSMN8R0-80YL
N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56
10
3
I
AL
(A)
10
2
003aaj246
10
(1)
(2)
1
(3)
10
-1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time
8. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
1
δ = 0.5
0.2
0.1
0.05
0.02
10
-2
single shot
t
p
T
Conditions
Fig. 5
Min
-
Typ
-
Max
0.63
Unit
K/W
003aai463
Z
th(j-mb)
(K/W)
10
-1
P
δ=
t
p
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
T
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN8R0-80YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
20 October 2016
4 / 12
Nexperia
PSMN8R0-80YL
N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56
9. Characteristics
Table 6.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 25 °C;
Fig. 9;
Fig. 10
I
D
= 1 mA; V
DS
=V
GS
; T
j
= -55 °C;
Fig. 9
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 175 °C;
Fig. 9
I
DSS
drain leakage current
V
DS
= 80 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 80 V; V
GS
= 0 V; T
j
= 25 °C
I
GSS
gate leakage current
V
GS
= 16 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -16 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C;
Fig. 11; Fig. 12
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 64 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
I
D
= 25 A; V
DS
= 64 V; V
GS
= 5 V;
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V
DS
= 60 V; R
L
= 2.4 Ω; V
GS
= 5 V;
R
G(ext)
= 5 Ω; T
j
= 25 °C
V
DS
= 25 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 15
T
j
= 25 °C;
Fig. 13; Fig. 14
-
-
-
-
-
-
-
-
-
-
54.7
13.5
17.1
6125
397
207
28
50
82
45
-
-
-
8167
476
284
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
-
104
-
nC
-
-
21.3
mΩ
-
0.5
-
-
-
-
-
-
-
-
-
0.07
2
2
6.3
5.8
2.45
-
500
10
100
100
8.5
8
V
V
µA
µA
nA
nA
mΩ
mΩ
Min
80
72
1.4
Typ
-
-
1.7
Max
-
-
2.1
Unit
V
V
V
Static characteristics
V
GS(th)
Source-drain diode
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
Fig. 16
-
0.82
1.2
V
PSMN8R0-80YL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
20 October 2016
5 / 12
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