Si2302DS
Vishay Siliconix
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.085 @ V
GS
= 4.5 V
0.115 @ V
GS
= 2.5 V
I
D
(A)
2.8
2.4
TO-236
(SOT-23)
G
1
3
S
2
D
Top View
Si2302DS (A2)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
20
"8
2.8
2.2
Unit
V
A
10
1.6
1.25
W
0.80
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Ambient
c
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t
v
5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70628
S-53600—Rev. D, 22-May-97
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FaxBack 408-970-5600
R
thJA
166
Symbol
Limit
100
Unit
_C/W
2-1
Si2302DS
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(
BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 10
mA
V
DS
= V
GS
, I
D
= 50
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 4.5 V
V
DS
w
5 V, V
GS
= 2.5 V
V
GS
= 4.5 V, I
D
= 3.6 A
r
DS(on)
V
GS
= 2.5 V, I
D
= 3.1 A
Forward Transconductance
a
Diode Forward Voltage
g
fs
V
SD
V
DS
= 5 V, I
D
= 3.6 A
I
S
= 1.6 A, V
GS
= 0 V
0.085
10
0.76
1.2
0.115
S
V
6
A
4
0.07
0.085
W
20
V
0.65
"100
1
10
nA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
On-State Drain Current
a
I
D(on)
Drain-Source On-Resistance
a
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= 10 V V
GS
= 0 V, f = 1 MHz
V,
V
MH
V,
4.5 V,
3.6
V
DS
= 10 V V
GS
= 4 5 V I
D
= 3 6 A
5.4
0.65
1.60
340
115
33
pF
F
10
nC
C
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%..
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 5 5
W
V,
5.5
I
D
^
3.6 A, V
GEN
= 4 5 V R
G
= 6
W
36 A
4.5 V,
12
36
34
10
25
60
ns
60
25
VNLR02
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Document Number: 70628
S-53600—Rev. D, 22-May-97
Si2302DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
Output Characteristics
V
GS
= 5 thru 2.5 V
10
Transfer Characteristics
8
I D – Drain Current (A)
I D – Drain Current (A)
2V
6
8
6
4
4
T
C
= 125_C
2
0, 0.5, 1 V
1.5 V
2
25_C
–55_C
0
0
1
2
3
4
5
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
1000
Capacitance
r DS(on)– On-Resistance (
W
)
0.12
V
GS
= 2.5 V
0.09
V
GS
= 4.5 V
0.06
C – Capacitance (pF)
800
600
400
C
iss
0.03
200
C
rss
C
oss
0
0
2
4
6
8
10
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
5
V
DS
= 10 V
I
D
= 3.6 A
V GS – Gate-to-Source Voltage (V)
Gate Charge
1.8
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 3.6 A
r DS(on)– On-Resistance (
W
)
(Normalized)
0
1
2
3
4
5
6
7
4
1.6
1.4
3
1.2
2
1.0
1
0.8
0
0.6
–50
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70628
S-53600—Rev. D, 22-May-97
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FaxBack 408-970-5600
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Si2302DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.20
On-Resistance vs. Gate-to-Source Voltage
r DS(on)– On-Resistance (
W
)
0.16
I S – Source Current (A)
T
J
= 150_C
0.12
I
D
= 3.6 A
0.08
T
J
= 25_C
0.04
1
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.2
14
12
10
Power (W)
8
6
4
–0.3
2
0
0
50
T
J
– Temperature (_C)
100
150
0.01
Single Pulse Power
0.1
V GS(th) Variance (V)
–0.0
I
D
= 250
mA
–0.1
T
C
= 25_C
Single Pulse
–0.2
–0.4
–50
0.10
1.00
Time (sec)
10.00
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70628
S-53600—Rev. D, 22-May-97
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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