RDR005N25
Nch 250V 0.5A Power MOSFET
lOutline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
lFeatures
1) Low on-resistance.
250V
8.8W
0.5A
1.0W
TSMT3
SOT-346T
(SC-96)
(1)
(3)
(2)
lInner
circuit
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
ec
N
ew om
m
D
es en
ig de
ns d
f
lPackaging
specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Parameter
Symbol
V
DSS
I
D *1
I
D *1
Value
250
T
c
= 25°C
0.5
T
c
= 100°C
0.27
2.0
20
1.0
0.54
150
-55
to
+150
I
D,pulse
*2
*1
BODY DIODE
*2
ESD PROTECTION DIODE
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute
maximum ratings
(T
a
= 25°C)
R
Drain - Source voltage
Continuous drain current
ot
Pulsed drain current
N
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
V
GSS
P
D
*3
P
D *4
T
j
T
stg
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© 2013 ROHM Co., Ltd. All rights reserved.
1/12
or
(1) Gate
(2) Source
(3) Drain
Taping
180
8
3,000
TL
EE
Unit
V
A
A
A
V
W
W
°C
°C
2013.02 - Rev.A
RDR005N25
lThermal
resistance
Values
Parameter
Symbol
Min.
Thermal resistance, junction - ambient
R
thJA *3
R
thJA *4
-
-
Typ.
-
-
Data Sheet
Unit
Max.
125
232
°C/W
°C/W
lElectrical
characteristics
(T
a
= 25°C)
Parameter
Symbol
Conditions
ec
N
ew om
m
D
es en
ig de
ns d
f
Values
Typ.
-
-
Min.
250
-
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 250V, V
GS
= 0V
T
j
= 25°C
I
DSS
V
DS
= 250V, V
GS
= 0V
T
j
= 125°C
-
-
-
-
-
I
GSS
V
GS
=
20V,
V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
V
GS (th)
1.0
-
V
GS
= 10V, I
D
= 0.25A
6.8
7.2
7.4
V
GS
= 4.5V, I
D
= 0.25A
R
DS(on) *5
V
GS
= 4V, I
D
= 0.25A
V
GS
= 10V, I
D
= 0.25A
T
j
= 125°C
-
12.8
0.42
g
fs
V
DS
= 10V, I
D
= 0.25A
0.21
2/12
Drain - Source breakdown voltage
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Forward transfer admittance
R
N
ot
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© 2013 ROHM Co., Ltd. All rights reserved.
or
Unit
V
Max.
-
25
mA
100
10
3.0
8.8
9.4
9.6
W
mA
V
18.0
-
S
2013.02 - Rev.A
RDR005N25
lElectrical
characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Symbol
C
iss
C
oss
C
rss
t
d(on) *5
t
r *5
Conditions
Min.
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
DD
⋍
125V, V
GS
= 10V
I
D
= 0.25A
-
-
-
-
-
-
-
Typ.
70
10
3
6
Data Sheet
Unit
Max.
-
-
-
-
-
ns
-
-
pF
Turn - off delay time
Fall time
lGate
Charge characteristics
(T
a
= 25°C)
Parameter
Total gate charge
Symbol
Q
g *5
ec
N
ew om
m
D
es en
ig de
ns d
f
10
21
90
t
d(off)
*5
R
L
= 500W
R
G
= 10W
t
f *5
Values
Typ.
3.5
Conditions
Min.
-
-
-
-
V
DD
⋍
125V
I
D
= 0.5A
Gate - Source charge
Gate - Drain charge
Q
gs *5
Q
gd
*5
V
GS
= 10V
Gate plateau voltage
V
(plateau)
V
DD
⋍
125V, I
D
= 0.5A
lBody
diode electrical characteristics
(Source-Drain)(T
a
= 25°C)
Values
Typ.
-
-
-
60
60
R
Parameter
Symbol
I
S *1
Conditions
Min.
-
-
-
-
-
Continuous source current
ot
Pulsed source current
Forward voltage
I
SM *2
T
c
= 25°C
N
V
SD *5
t
rr
*5
*5
V
GS
= 0V, I
S
= 0.5A
I
S
= 0.25A
di/dt = 100A/ms
Reverse recovery time
Reverse recovery charge
Q
rr
*1 Limited only by maximum temperature allowed.
*2 Pw
10ms, Duty cycle
1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (12×20×0.8mm)
*5 Pulsed
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© 2013 ROHM Co., Ltd. All rights reserved.
3/12
or
Unit
Max.
-
-
-
-
V
nC
0.55
1.0
3.0
Unit
A
A
V
ns
nC
Max.
0.5
2.0
1.2
-
-
2013.02 - Rev.A
RDR005N25
lElectrical
characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
Normalized Transient Thermal Resistance : r
(t)
120
Fig.2 Normalized Transient Thermal
Resistance vs. Pulse Width
10
T
a
=25ºC
Power Dissipation : P
D
/P
D
max. [%]
1
80
60
40
20
0
0
ec
N
ew om
m
D
es en
ig de
ns d
f
0.1
0.01
25
50
75
100
125
150
175
0.001
0.0001
0.01
1
Rth(ch-a)=125ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm
×
30mm
×
0.8mm)
Junction Temperature : T
j
[°C]
Pulse Width : P
W
[s]
N
ot
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© 2013 ROHM Co., Ltd. All rights reserved.
R
4/12
or
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
100
100
2013.02 - Rev.A
RDR005N25
lElectrical
characteristic curves
Data Sheet
Fig.3 Typical Output Characteristics(I)
0.1
T
a
=25ºC
Pulsed
0.08
V
GS
=10.0V
V
GS
=4.0V
0.06
V
GS
=4.5V
V
GS
=3.0V
Fig.4 Typical Output Characteristics(II)
0.5
T
a
=25ºC
Pulsed
0.4
V
GS
=10.0V
Drain Current : I
D
[A]
Drain Current : I
D
[A]
0.04
0.02
0
0
ec
N
ew om
m
D
es en
ig de
ns d
f
V
GS
=2.5V
0.2
0.1
V
GS
=2.0V
0
0.2
0.4
0.6
0.8
1
0
2
4
6
0.3
Drain - Source Voltage : V
DS
[V]
Drain - Source Voltage : V
DS
[V]
N
ot
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© 2013 ROHM Co., Ltd. All rights reserved.
R
5/12
or
V
GS
=4.5V
V
GS
=4.0V
V
GS
=3.0V
V
GS
=2.5V
V
GS
=2.0V
8
10
2013.02 - Rev.A
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