C3D04065E
®
Silicon Carbide Schottky Diode
V
RRM
Q
c
=
=
650 V
6A
10 nC
Z-Rec
Rectifier
Features
I
F
(
T
C
=135˚C)
=
Package
•
•
•
•
•
•
•
•
650-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on V
F
TO-252-2
Benefits
•
•
•
•
•
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
Part Number
C3D04065E
CASE
Applications
Package
TO-252-2
Marking
C3D04065
•
•
•
•
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
V
RRM
V
RSM
V
DC
I
F
I
FRM
I
FSM
I
F,Max
P
tot
dV/dt
∫i
2
dt
Parameter
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Diode dV/dt ruggedness
i
2
t value
Value Unit
650
650
650
13.5
6
4
17
12
25
19
220
160
52
22.5
200
3.1
1.8
V
V
V
A
A
A
A
W
V/ns
A
2
s
T
C
=25˚C
T
C
=135˚C
T
C
=155˚C
Test Conditions
Note
Fig. 3
T
C
=25˚C, t
P
= 10 ms, Half Sine Wave
T
C
=110˚C, t
P
= 10 ms, Half Sine Wave
T
C
=25˚C, t
p
= 10 ms, Half Sine Wave
T
C
=110˚C, t
p
= 10 ms, Half Sine Wave
T
C
=25˚C, t
P
= 10 µs, Pulse
T
C
=110˚C, t
P
= 10 µs, Pulse
T
C
=25˚C
T
C
=110˚C
V
R
=0-650V
T
C
=25˚C, t
P
=10 ms
T
C
=110˚C, t
P
=10 ms
Fig. 8
Fig. 8
Fig. 4
T
J
, T
stg
Operating Junction and Storage Temperature
-55 to
+175
˚C
1
C3D04065E Rev. A, 08-2016
Electrical Characteristics
Symbol
V
F
I
R
Q
C
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Typ.
1.4
1.7
6
12
10
231
18.5
15
1.4
Max.
1.7
2.4
30
120
Unit
V
μA
nC
Test Conditions
I
F
= 4 A T
J
=25°C
I
F
= 4 A T
J
=175°C
V
R
= 650 V T
J
=25°C
V
R
= 650 V T
J
=175°C
V
R
= 400 V, I
F
= 4 A
di/dt = 500 A/μs
T
J
= 25°C
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 200 V, T
J
= 25˚C, f = 1 MHz
V
R
= 400 V, T
J
= 25˚C, f = 1 MHz
V
R
= 400 V
Note
Fig. 1
Fig. 2
Fig. 5
C
E
C
Total Capacitance
Capacitance Stored Energy
pF
μJ
Fig. 6
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
R
θJC
Parameter
Thermal Resistance from Junction to Case
Typ.
2.9
Unit
°C/W
Note
Fig. 9
Typical Performance
12
10
Foward
I (A)
Current, I
F
(A)
100
T
J
= -55 °C
Reverse Leakage
I (
m
A)
I
RR
(uA)
Current,
T
J
= 25 °C
80
8
6
4
2
0
0.0
T
J
= 75 °C
T
J
= 125 °C
T
J
= 175 °C
60
T
J
= 175 °C
T
J
= 125 °C
R
F
40
T
J
= 75 °C
T
J
= 25 °C
20
T
J
= -55 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
200
400
600
800
1000
1200
Foward Voltage, V
F
(V)
V
F
(V)
Figure 1. Forward Characteristics
Reverse
V
R
(V)
V
R
(V)
Voltage,
Figure 2. Reverse Characteristics
2
C3D04065E Rev. A, 08-2016
Typical Performance
50
45
40
35
I
F(peak)
(A)
I
F
(A)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
P
P
Tot
(W)
TOT
(W)
60
50
40
30
20
30
25
20
15
10
5
0
25
50
75
100
T
C
(°C)
T
C
˚C
Figure 3. Current Derating
10
0
25
50
75
100
T
˚C
T
C
(°C)
C
125
150
175
125
150
175
Figure 4. Power Derating
16
14
Capacitive Charge, Q
C
(nC)
Q
C
(nC)
Conditions:
T
J
= 25 °C
250
12
Capacitance (pF)
C (pF)
200
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
10
8
6
4
2
0
0
100
200
300
400
500
600
700
150
100
50
0
0
1
10
100
1000
Reverse Voltage, V
R
(V)
V
R
(V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage
Reverse
V
R
(V)
V
R
(V)
Voltage,
Figure 6. Capacitance vs. Reverse Voltage
3
C3D04065E Rev. A, 08-2016
Typical Performance
4
3.5
Capacitance Stored Energy, E
C
(µJ)
µ
E (
m
J)
1,000
3
2.5
I
FSM
(A)
I
(A)
FSM
T
J_initial
= 25 °C
T
J_initial
= 110 °C
2
1.5
1
0.5
0
0
100
200
300
R
100
C
400
500
600
700
10
10E-6
100E-6
t
p
(s)
Time, t
p
(s)
1E-3
10E-3
Reverse Voltage, V
R
(V)
V (V)
Figure 7. Capacitance Stored Energy
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Thermal Resistance (
o
C/W)
Thermal Resistance (˚C/W)
1
0.5
0.3
0.1
0.05
100E-3
0.02
0.01
SinglePulse
10E-3
1E-6
10E-6
100E-6
Time, t
p
(s)
T (Sec)
1E-3
10E-3
100E-3
1
Figure 9. Transient Thermal Impedance
4
C3D04065E Rev. A, 08-2016
Package Dimensions
Package TO-252-2
SYMBOL
A
A1
b
b2
b3
c
c2
D
D1
E
E1
e
H
L
L2
L3
L4
θ
Tjb June 2015
MX+DI+PSI
MILLIMETERS
MIN
MAX
2.159
2.413
0
0.13
0.64
0.89
0.653
1.143
5.004
5.6
0.457
0.61
0.457
0.864
5.867
6.248
5.21
-
6.35
7.341
4.32
-
4.58 BSC
9.65
10.414
1.106
1.78
0.51 BSC
0.889
1.27
0.64
1.01
0°
8°
Recommended Solder Pad Layout
TO-252-2
Package
TO-252-2
Marking
C3D04065
Part Number
C3D04065E
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C3D04065E Rev. A, 08-2016
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