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RN1106FS

产品描述Bipolar Transistors - Pre-Biased 50mA 20volts 4.7K x 47Kohms
产品类别分立半导体    晶体管   
文件大小123KB,共9页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN1106FS概述

Bipolar Transistors - Pre-Biased 50mA 20volts 4.7K x 47Kohms

RN1106FS规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明FSM, 2-1E1A, 3 PIN
针数3
Reach Compliance Codeunknown
其他特性BUILT IN BIAS RESISTOR RATION IS 10
最大集电极电流 (IC)0.05 A
集电极-发射极最大电压20 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)120
JESD-30 代码R-PDSO-F3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON

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RN1101FS~RN1106FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101FS,RN1102FS,RN1103FS
RN1104FS,RN1105FS,RN1106FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Incorporating a bias resistor into a transistor reduces parts count.
0.6±0.05
Unit: mm
0.15±0.05
0.2±0.05
1
3
2
0.8±0.05
1.0±0.05
0.1±0.05
0.1±0.05
1.BASE
2.EMITTER
3.COLLECOTR
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN2101FS~RN2106FS
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1101FS
RN1102FS
R2
RN1103FS
RN1104FS
E
RN1105FS
RN1106FS
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
B
R1
JEDEC
JEITA
TOSHIBA
0.48
-0.04
+0.02
fSM
0.35±0.05
2-1E1A
Weight: 0.0006g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101FS~RN1106FS
RN1101FS~1106FS
RN1101FS~1104FS
RN1105FS, 1106FS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
20
20
10
5
50
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01

RN1106FS相似产品对比

RN1106FS RN1103FS
描述 Bipolar Transistors - Pre-Biased 50mA 20volts 4.7K x 47Kohms Bipolar Transistors - Pre-Biased 50mA 20volts 22K x 22Kohms
厂商名称 Toshiba(东芝) Toshiba(东芝)
包装说明 FSM, 2-1E1A, 3 PIN FSM, 2-1E1A, 3 PIN
针数 3 3
Reach Compliance Code unknown unknown
其他特性 BUILT IN BIAS RESISTOR RATION IS 10 BUILT IN BIAS RESISTOR RATION IS 1
最大集电极电流 (IC) 0.05 A 0.05 A
集电极-发射极最大电压 20 V 20 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 120 100
JESD-30 代码 R-PDSO-F3 R-PDSO-F3
元件数量 1 1
端子数量 3 3
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子形式 FLAT FLAT
端子位置 DUAL DUAL
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON

 
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