VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
FEATURES
• Fast turn-off thyristor
• Fast recovery diode
• High surge capability
• Electrically isolated baseplate
• 3000 V
RMS
isolating voltage
• Industrial standard package
• UL approved file E78996
MAGN-A-PAK
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
PRODUCT SUMMARY
I
T(AV)
Type
180 A
Modules - Thyristor, Fast
These series of MAGN-A-PAK modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and others
where fast switching characteristics are required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
t
q
t
rr
V
DRM
/V
RRM
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
VALUES
180
T
C
85
400
7130
7470
255
232
2550
20/25
2
800/1200
- 40 to 125
kA
2
s
kA
2
s
μs
V
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
08
12
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
800
1200
I
RRM
/I
DRM
MAXIMUM
AT T
J
= 125 °C
mA
50
VSK.F180-
Document Number: 93685
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
2500 Hz
5000 Hz
10 000 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dl/dt
Case temperature
Equivalent values for RC circuit
370
435
290
240
170
50
530
650
430
345
270
565
670
490
390
290
50
800
1000
720
540
390
2400
1540
610
390
-
50
3150
2050
830
540
-
V
A/μs
60
10/0.47
°C
/μF
A
80 % V
DRM
50
85
10/0.47
60
85
80 % V
DRM
-
60
10/0.47
85
80 % V
DRM
-
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Typical latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
180
85
400
7130
7470
6000
Sinusoidal half wave,
initial T
J
= T
J
maximum
6280
255
232
180
164
2550
1.30
1.38
0.90
0.71
1.84
600
1000
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 600 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, Ra = 6
,
I
g
= 1A
m
V
mA
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93685
Revision: 19-Jul-10
VSK.F180..P Series
Fast Thyristor/Diode and Thyristor/Thyristor
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 180 A
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
Maximum recovery time
Maximum turn-off time
SYMBOL
dI/dt
t
rr
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 ms, V
D
= 80 % V
DRM
T
J
= 25 °C
I
TM
= 350 A, dI/dt = - 25 A/μs, V
R
= 50 V, T
J
= 25 °C
I
TM
= 750 A; T
J
= 125 °C; dI/dt = - 25 A/μs;
V
R
= 50 V; dV/dt = 400 V/μs linear to 80 % V
DRM
20
VALUES
K
800
2
25
μs
J
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
RMS insulation voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
V
INS
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= 125 °C, exponential to 67 % V
DRM
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
T
J
= 125 °C, rated V
DRM
/V
RRM
applied
VALUES
1000
3000
50
UNITS
V/μs
V
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
TEST CONDITIONS
f = 50 Hz, d% = 50
T
J
= 125 °C, f = 50 Hz, d% = 50
T
J
= 125 °C, t
p
5 ms
T
J
= 25 °C, V
ak
12 V, Ra = 6
T
J
= 125 °C, rated V
DRM
applied
VALUES
60
10
10
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximuml thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
MAP to heatsink
busbar to MAP
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, flat and greased
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to
allow for the spread of the compound. Use of cable
lugs is not recommended, busbar should be used
and restrained during tightening. Threads must be
lubricated with a compound.
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.125
K/W
0.02
4 to 6
(35 to 53)
500
17.8
N·m
(lbf · in)
g
oz.
UNITS
°C
Approximate weight
Case style
MAGN-A-PAK
Document Number: 93685
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
R
thJC
CONDUCTION
CONDUCTIONS ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.009
0.010
0.014
0.020
0.032
RECTANGULAR CONDUCTION
0.006
0.011
0.015
0.020
0.033
T
J
= 125 °C
K/W
TEST CONDITIONS
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
130
M a xim um A llo w a ble C ase Tem pera ture (°C )
120
110
100
90
M axim um Ave rag e O n -state Pow er Lo ss (W )
VSK.F180.. Series
R
thJC
(DC) = 0.125 K/W
350
300
250
200
RM S Lim it
150
100
50
0
0
20
40
60
80 100 120 140 160 180
A ve ra g e O n-sta te C urre n t (A)
C ond uctio n An gle
1 80°
1 20°
90°
60°
30°
C o n d u ctio n A n g le
30°
80
70
60
0
40
80
120
160
200
Averag e O n -state C urren t (A )
60°
90°
120°
180°
VSK.F1 80 .. Series
Per Ju n ction
T
J
= 1 25 °C
Fig. 1 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
130
M ax im um Allow a ble C ase Tem pera ture (°C )
120
110
100
90
80
70
60
0
50
M axim um Av erag e O n-state Po w e r Loss (W )
VSK.F1 8 0 .. Se ries
R
thJC
(D C ) = 0 .1 2 5 K /W
450
400
350
300
250
200 RM S Lim it
150
100
50
0
0
50
100
150
200
250
300
A verag e O n-sta te C urre n t (A )
C on d u c tio n Pe riod
DC
180°
120°
90°
60°
30°
C o n d u c tio n Pe rio d
3 0°
6 0°
9 0°
1 2 0°
1 80°
100
150
200
DC
250
300
VSK.F18 0.. Series
Per Junction
T
J
= 12 5 °C
Averag e O n-state C urren t (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93685
Revision: 19-Jul-10
VSK.F180..P Series
Fast Thyristor/Diode and Thyristor/Thyristor
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 180 A
6500
Pea k Ha lf Sine W a ve O n -state C urren t (A)
Transient Therm al Im pedanc e Z
thJC
(K/W )
6000
5500
5000
4500
4000
3500
3000
1
10
100
Nu m b er O f E qu a l Am plitu d e Half C yc le C u r re nt Pu lse s (N)
1
A t A ny Rate d Loa d C o nd itio n A nd W ith
Rate d V
R RM
A p plie d Fo llo w ing Surg e .
In itial T
J
= 125 °C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
Ste a dy Sta te V a lue:
R
thJ C
= 0.125 K/W
(D C O p eratio n)
0.1
0.01
VSK.F18 0.. S eries
Pe r Jun ctio n
VSK.F180 .. Series
Per Junctio n
0.001
0.001
0.01
0.1
1
10
100
Sq u are W a ve Pulse D ura tio n (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
7500
M axim u m Re verse Rec ove ry C h arg e - Q rr (μC )
Pe a k H alf Sin e W av e O n-state C urre n t (A )
7000
6500
6000
5500
5000
4500
4000
3500
3000
M a xim um No n Rep etitiv e Surg e C urrent
Vers us Pulse Tra in D ura tio n . C ontro l
O f C o nduction May Not Be Maintained.
In itial T
J
= 125 °C
N o V o lta g e R e a p p lie d
Ra te d V
RR M
R e a pp lie d
320
300
280
260
240
220
200
180
160
140
120
100
80
10
20
30
40
50
60
70
80
90 100
Ra te O f Fa ll O f Fo rw a rd C urre n t - d i/d t (A/μs)
VSK.F 180.. Se ries
T
J
= 125 °C
I
TM
= 1000 A
500 A
300 A
200 A
100 A
VSK.F180.. Series
Pe r Jun ctio n
0 .1
1
2500
0 .0 1
Pu lse Train D uration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovery Charge Characteristics
10000
M axim um Re verse Rec o very C urre nt - Irr (A)
180
160
140
120
100
80
60
40
20
10
20
30
40
50
60
70
80
90 100
Rate O f Fall O f Fo rw a rd C urren t - d i/dt (A/μs)
VSK.F180.. Series
T
J
= 125 °C
I
TM
= 1000A
5 00A
3 00A
2 00A
1 00A
Instan ta neous O n -state C urren t (A )
1000
T
J
= 25 °C
T
J
= 12 5 °C
VSK.F1 80.. Series
Per Ju n ctio n
100
1
2
3
4
5
6
7
In sta n ta n e o us O n -sta te V olta g e (V )
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Document Number: 93685
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
