d. Maximum under steady state conditions is 95 °C/W.
e. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in
manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-2143-Rev. B, 07-Sep-15
Document Number: 69056
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
9
1.
1
3.0
mm
m
m
m
m
Top View
G
SYMBOL
V
DS
V
GS
LIMIT
30
± 20
6
a
6
a
6
a, b, c
6
a, b, c
UNIT
V
I
D
A
I
DM
I
S
30
5.2
2.1
b, c
6.3
4
2.5
b, c
1.6
b, c
-55 to +150
260
P
D
W
T
J
, T
stg
°C
SYMBOL
t
≤
5s
Steady State
R
thJA
R
thJF
TYPICAL
40
15
MAXIMUM
50
20
UNIT
°C/W
Si5440DC
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
SYMBOL
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 9.1 A
V
GS
= 4.5 V, I
D
= 8.1 A
V
DS
= 15 V, I
D
= 9.1 A
MIN.
30
-
-
1.2
-
-
-
20
-
-
-
-
TYP.
-
31
-5.1
-
-
-
-
-
0.016
0.019
30
1200
180
80
19
9
3.5
2.3
3
20
12
20
10
10
10
20
10
-
-
0.8
20
10
11
9
MAX.
-
-
-
2.5
± 100
1
5
-
0.019
0.024
-
-
-
-
29
14
-
-
-
30
20
30
15
15
15
30
15
5.2
30
1.2
40
20
-
-
UNIT
V
mV/°C
V
nA
μA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 9.1 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 9.1 A
f = 1 MHz
V
DD
= 15 V, R
L
= 2.1
Ω
I
D
≅
7.3 A, V
GEN
= 4.5 V, R
g
= 1
Ω
-
-
-
-
-
-
-
-
-
-
-
-
pF
nC
Ω
ns
V
DD
= 15 V, R
L
= 2.1
Ω
I
D
≅
7.3 A, V
GEN
= 10 V, R
g
= 1
Ω
-
-
-
T
C
= 25 °C
I
S
= 7.3 A, V
GS
= 0 V
-
-
-
-
-
-
-
A
V
ns
nC
ns
I
F
= 7.3 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2143-Rev. B, 07-Sep-15
Document Number: 69056
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5440DC
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 10 V thru 4 V
25
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
T
C
= - 55 °C
Vishay Siliconix
20
6
15
V
GS
= 3 V
10
4
T
C
= 25 °C
2
T
C
= 125 °C
5
V
GS
= 2 V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
3.0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
- Gate-to-Source Voltage (V)
3.0
Output Characteristics
Transfer Characteristics
0.024
1500
C
iss
1200
C - Capacitance (pF)
0.022
R
DS(on)
- On-Resistance (Ω)
0.020
V
GS
= 4.5 V
0.018
V
GS
= 10 V
0.016
900
600
0.014
300
C
rss
0
5
C
oss
0.012
0
5
10
15
20
I
D
- Drain Current (A)
25
30
0
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
Capacitance
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 9.1 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 24 V
4
1.6
I
D
= 9.1 A
1.4
1.2
V
GS
= 10 V, 4.5 V
1.0
2
0.8
0
0
4
8
12
16
Q
g
- Total Gate Charge (nC)
20
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-2143-Rev. B, 07-Sep-15
On-Resistance vs. Junction Temperature
Document Number: 69056
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5440DC
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.05
I
D
= 9.1 A
R
DS(on)
- On-Resistance (Ω)
0.04
Vishay Siliconix
I
S
- Source Current (A)
T
J
= 150 °C
10
0.03
T
J
= 125 °C
0.02
T
J
= 25 °C
0.01
T
J
= 25 °C
1
0.0
0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.2
50
2.0
I
D
= 250 µA
1.8
Power (W)
40
V
GS(th)
(V)
30
1.6
20
1.4
10
1.2
1.0
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
Threshold Voltage
100
Limited by R
DS(on)
*
100 µs
10
I
D
- Drain Current (A)
Single Pulse Power
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S15-2143-Rev. B, 07-Sep-15
Document Number: 69056
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5440DC
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
16
8
Vishay Siliconix
I
D
- Drain Current (A)
12
Power (W)
6
8
Package Limited
4
4
2
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-2143-Rev. B, 07-Sep-15
Document Number: 69056
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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