VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Base
cathode
+
2
• Glass passivated pellet chip junction
• Designed and qualified
JEDEC
®
-JESD 47
according
to
Available
2
3
1
1
Anode -
3
- Anode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-263AB (D PAK)
2
APPLICATIONS
• Output rectification and
choppers and converters
freewheeling
in
inverters,
on
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-263AB (D
2
PAK)
20 A
800 V, 1000 V, 1200 V
1.31 V
355 A
95 ns
150 °C
Single die
0.6
• Input rectifications where severe
conducted EMI should be met
restrictions
DESCRIPTION
The VS-20ETF..SPbF soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
20 A, T
J
= 25 °C
1 A, 100 A/μs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
800 to 1200
355
1.31
95
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETF08SPbF
VS-20ETF10SPbF
VS-20ETF12SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
6
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
300
355
450
635
6350
A
2
s
A
2
s
A
UNITS
Revision: 11-Feb-16
Document Number: 94099
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.31
11.88
0.93
0.1
6
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 20 A
pk
25 A/μs
25 °C
Typical
VALUES
400
6.1
1.7
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
Soldering temperature
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
T
S
(1)
TEST CONDITIONS
VALUES
-40 to +150
UNITS
°C
DC operation
0.9
°C/W
62
260
2
0.07
20ETF08S
°C
g
oz.
Marking device
Case style TO-263AB (D
2
PAK)
20ETF10S
20ETF12S
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 11-Feb-16
Document Number: 94099
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
45
150
140
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
40
35
30
25
20
15
10
5
0
0
5
180°
120°
90°
60°
30°
DC
130
Ø
Conduction angle
120
30°
110
60°
90°
120°
180°
100
0
5
10
15
20
25
RMS limit
Ø
Conduction period
20ETF.. Series
T
J
= 150 °C
10
15
20
25
30
35
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
350
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
300
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
Peak Half Sine Wave
Forward Current (A)
140
Ø
250
200
150
100
130
Conduction period
120
60°
110
30°
90°
120°
180°
100
0
5
10
15
20
25
30
35
DC
50
1
20ETF.. Series
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
400
180°
120°
90°
60°
30°
RMS limit
350
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
30
25
20
15
10
5
0
0
Peak Half Sine Wave
Forward Current (A)
300
250
200
150
100
20ETF.. Series
50
0.01
Ø
Conduction angle
20ETF.. Series
T
J
= 150 °C
5
10
15
20
25
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 94099
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
1000
Instantaneous Forward Current (A)
100
10
T
J
= 25 °C
T
J
= 150 °C
20ETF.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.7
0.6
20ETF.. Series
T
J
= 25 °C
6
5
4
3
I
FM
= 10 A
2
1
0
0
50
100
150
200
0
50
100
150
200
I
FM
= 5 A
I
FM
= 1 A
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
0.5
0.4
0.3
0.2
0.1
0
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
I
FM
= 20 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
1.2
20ETF.. Series
T
J
= 150 °C
10
20ETF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
0.9
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
8
6
I
FM
= 10 A
4
I
FM
= 5 A
2
I
FM
= 1 A
0.6
0.3
0
0
50
100
150
200
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Revision: 11-Feb-16
Document Number: 94099
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
35
20ETF.. Series
T
J
= 150 °C
25
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
10
I
FM
= 1 A
5
30
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
rr
- Typical Reverse
Recovery Current (A)
I
rr
- Typical Reverse
Recovery Current (A)
20
25
20
15
10
15
I
FM
= 1 A
5
0
0
50
100
150
200
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady state value
(DC operation)
0.1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 94099
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
