RN1408LF: 产品描述Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor; 产品类别半导体分立半导体; 文件大小356KB，共7页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1408LF概述

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

RN1408LF规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Toshiba(东芝)
产品种类 Product Category	Bipolar Transistors - Pre-Biased
RoHS	Details
Transistor Polarity	NPN
Typical Input Resistor	22 kOhms
Typical Resistor Ratio	0.468
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOT-346-3
DC Collector/Base Gain hfe Min	80
Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA
Pd-功率耗散 Pd - Power Dissipation	200 mW
系列 Packaging	Cut Tape
系列 Packaging	MouseReel
系列 Packaging	Reel
Emitter- Base Voltage VEBO	7 V
NumOfPackaging	3
工厂包装数量 Factory Pack Quantity	3000

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RN1407½RN1409

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1407, RN1408, RN1409

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2407 to RN2409

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1407

RN1408

RN1409

R1 (kΩ)

R2 (kΩ)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN1407 to 1409

RN1407

Emitter-base voltage

RN1408

RN1409

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1407 to 1409

stg

EBO

Symbol

CBO

CEO

Rating

100

200

150

−55

to 150

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1985-05

2014-03-01

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