DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
PN2222A
NPN switching transistor
Product data sheet
Supersedes data of 1999 May 21
2004 Oct 11
NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
General purpose switching and linear amplification.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package. PNP complement: PN2907A.
PINNING
PIN
1
2
3
collector
base
emitter
PN2222A
DESCRIPTION
1
handbook, halfpage
2
3
1
2
3
MAM279
Fig.1
Simplified outline (TO-92; SOT54) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PN2222A
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
75
40
6
600
800
200
500
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2004 Oct 11
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
= 60 V; I
E
= 0 A
V
CB
= 60 V; I
E
= 0 A; T
j
= 125
°C
V
EB
= 3 V; I
C
= 0 A
V
CE
= 10 V; I
C
= 0.1 mA
V
CE
= 10 V; I
C
= 1 mA
V
CE
= 10 V; I
C
= 10 mA
V
CE
= 10 V; I
C
= 10 mA; T
j
=
−55 °C
V
CE
= 1 V; I
C
= 150 mA
V
CE
= 10 V; I
C
= 150 mA
V
CE
= 10 V; I
C
= 500 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
V
CB
= 10 V; I
E
= i
e
= 0 A; f = 1 MHz
V
EB
= 500 mV; I
C
= i
c
= 0 A; f = 1 MHz
V
CE
= 20 V; I
C
= 20 mA; f = 100 MHz
V
CE
= 5 V; I
C
= 100
µA;
R
S
= 1 kΩ;
f = 1 kHz
MIN.
−
−
−
35
50
75
35
50
100
40
−
1
0.6
−
−
−
300
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
250
PN2222A
UNIT
K/W
MAX.
10
10
10
−
−
−
−
−
300
−
300
−
1.2
2
8
25
−
4
UNIT
nA
µA
nA
mV
V
V
V
pF
pF
MHz
dB
Switching times (between 10 % and 90 % levels); see
Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA; T
amb
= 25
°C
−
−
−
−
−
−
35
15
20
250
200
60
ns
ns
ns
ns
ns
ns
2004 Oct 11
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PN2222A
V
BB
V
CC
R
B
oscilloscope
V
I
R1
(probe)
450
Ω
R2
R
C
V
o
(probe)
450
Ω
DUT
oscilloscope
mlb826
V
i
= 9.5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
=
−3.5
V; V
CC
= 29.5 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
2004 Oct 11
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
PN2222A
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.55
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L
1(1)
max.
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
JEITA
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
2004 Oct 11
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
