TGA2218
13.4 – 16.5 GHz 12 W GaN Power Amplifier
Applications
•
Satellite Communications
•
Data Link
•
Radar
Product Features
•
Frequency Range: 13.4 – 16.5 GHz
•
P
SAT
: 41 dBm
@
P
IN
= 18 dBm
•
PAE: >28%
@
P
IN
= 18 dBm
•
•
•
•
•
•
Large Signal Gain: 23 dB
Small Signal Gain: >26 dB
Bias: V
D
= 28 V, I
DQ
= 225 mA, V
G
= -2.6 V Typical
Process Technology: TQGaN15
Chip Dimensions: 3.7 x 1.73 x 0.10 mm
Performance Under CW Operation
Functional Block Diagram
2
3
4
1
5
8
7
6
General Description
TriQuint’s TGA2218 is a Ku-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.15um GaN
on SiC process. The TGA2218 operates from 13.4 – 16.5
GHz and provides greater than 12 W of saturated output
power with 23 dB of large signal gain and greater than
28% power-added efficiency.
This high performance combination provides system
designers the flexibility to improve system performance
while reducing size and cost.
The TGA2218 is fully matched to 50 Ohms with
integrated DC blocking capacitors on RF ports simplifying
system integration. It is ideally suited for military and
commercial Ku-band radar and satellite communication
systems.
Lead-free and RoHS compliant.
Pad Configuration
Pad No.
1
2, 7
3
4, 6
5
8
Symbol
RF In
V
G3
V
D12
V
D3
RF Out
V
G12
Ordering Information
Part
ECCN
3A001.b.2.c
Description
13.4 – 16.5 GHz 12 W
GaN Power Amplifier
Evaluation boards are available upon request.
TGA2218
- 1 of 15 -
Preliminary Datasheet: Rev – B, 06-13-17
© 2017 Qorvo
Disclaimer: Subject to change without notice
www.qorvo.com
TGA2218
13.4 – 16.5 GHz 12 W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Drain Voltage (V
D
)
Gate Voltage Range (V
G
)
Drain Current (I
D1-2
)
Drain Current (I
D3
)
Gate Current
Power Dissipation (P
DISS
), 85° CW
C,
Input Power (P
IN
), CW, 50 ,
V
D
= 28 V, I
DQ
= 225 mA, 85°
C
Input Power (P
IN
), CW, VSWR 3:1,
V
D
= 28 V, I
DQ
= 225 mA, 85°
C
Channel Temperature (T
CH
)
Mounting Temperature (30 seconds)
Storage Temperature
Recommended Operating Conditions
Value
Parameter
Drain Voltage (V
D
)
Drain Current (I
DQ
)
Gate Voltage (V
G
)
Value
28 V
225 mA (Total)
-2.6 V (Typ.)
29.5 V
-8 to -0 V
1.15 A
1.03 A
See plot on
page 3
35 W
30 dBm
27 dBm
275°C
320°C
-40 to 150°
C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25° , V
D
= 28 V, I
DQ
= 225 mA, V
G
= -2.6 V Typical, CW
C
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Power Gain (Pin = 18dBm)
Output Power (Pin = 18dBm)
Power Added Efficiency (Pin = 18dBm)
Small Signal Gain Temperature Coefficient
Output Power Temperature Coefficient
(Temp:
25°C
–
85°C
@
Pin = 18dBm)
Recommended Operating Voltage
Min
13.4
Typical
>26
>13
>3
23
41
>28
-0.06
-0.01
20 to 28
Max
16.5
Units
GHz
dB
dB
dB
dB
dBm
%
dB/°C
dB/°C
28
V
Preliminary Datasheet: Rev – B, 06-13-17
© 2017 Qorvo
- 2 of 15 -
Disclaimer: Subject to change without notice
www.qorvo.com
TGA2218
13.4 – 16.5 GHz 12 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θ
JC
)
(1)
Channel Temperature (T
CH
) (No RF drive)
Median Lifetime (T
M
)
Test Conditions
T
base
= 85°C
V
D
= 28 V, I
DQ
= 225 mA
P
DISS
= 6.3 W
Value
Units
4.93
ºC/W
116
°
C
4.9 x 10^11 Hrs
5.36
245
1.6 x 10^6
ºC/W
°
C
Hrs
Thermal Resistance (θ
JC
)
(1)
T
base
= 85°C, CW , V
D
= 28 V, I
DQ
= 225 mA
Channel Temperature (T
CH
) (Under RF drive) Freq = 14.75 GHz, I
D_Drive
= 1.45 A,
P
IN
= 20 dBm, P
OUT
= 40.5 dBm, P
DISS
= 29.8 W
Median Lifetime (T
M
)
Notes:
1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuMo (75/25) carrier using 1.5 mil AuSn.
Median Lifetime
Test Conditions: V
D
= +28 V; Failure Criteria = 10% reduction in
ID_MAX During DC Life Testing
1E+15
Median Lifetime vs. Channel Temperature
Median Lifetime, T
M
(Hours)
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
FET16
75
100
125
150
175
200
225
250
275
Channel Temperature, T
CH
(°C)
Preliminary Datasheet: Rev – B, 06-13-17
© 2017 Qorvo
- 3 of 15 -
Disclaimer: Subject to change without notice
www.qorvo.com
TGA2218
13.4 – 16.5 GHz 12 W GaN Power Amplifier
Typical Performance (Small Signal)
36
33
30
Gain vs. Frequency vs. Temperature
30
28
26
Gain vs. Frequency vs. Drain Voltage
Temp = 25 °
C
S21 (dB)
S21 (dB)
27
24
21
-40 °C
24
22
20
18
16
12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18
20 V
24 V
28 V
I
DQ
= 225 mA
18
15
12
25 °
C
85 °
C
V
D
= 28 V, I
DQ
= 225 mA
12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18
Frequency (GHz)
Frequency (GHz)
30
28
26
Gain vs. Frequency vs. Current
Temp = 25 °
C
S21 (dB)
24
22
250 mA
20
18
225 mA
200 mA
V
D
= 28 V
16
12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18
Frequency (GHz)
0
-3
-6
-9
Input Return Loss vs. Frequency vs. Temp.
V
D
= 28 V, I
DQ
= 225 mA
0
-1
-2
Output Return Loss vs. Frequency vs. Temp.
V
D
= 28 V, I
DQ
= 225 mA
-40 °
C
85 °
C
-3
S11 (dB)
-15
-18
-21
-24
-27
-30
S22 (dB)
-12
25 °
C
-4
-5
-6
-7
-8
-9
-10
-40 °C
25 °C
85 °C
12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18
12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18
Frequency (GHz)
Frequency (GHz)
Preliminary Datasheet: Rev – B, 06-13-17
© 2017 Qorvo
- 4 of 15 -
Disclaimer: Subject to change without notice
www.qorvo.com
TGA2218
13.4 – 16.5 GHz 12 W GaN Power Amplifier
Typical Performance (CW Operation)
43
42
41
Output Power vs. Frequency vs. Voltage
Temp. = 25 °C
43
42
41
Output Power vs. Frequency vs. Temp.
Output Power (dBm)
Output Power (dBm)
40
39
38
37
36
35
34
33
32
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
20 V
24 V
28 V
I
DQ
= 225 mA
P
IN
= 18 dBm
40
39
38
37
36
35
34
33
32
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
V
D
= 28 V, I
DQ
= 225 mA
-40 °C, P
IN
= 15 dBm
25 ° P
IN
= 18 dBm
C,
85 °C, P
IN
= 20 dBm
Frequency (GHz)
Frequency (GHz)
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
Output Power vs. Input Power vs. Voltage
Temp. = 25 °
C
43
42
41
40
39
38
37
36
35
34
33
32
31
Output Power vs. Frequency vs. P
IN
Temp. = 25 °C
Output Power (dBm)
Output Power (dBm)
Freq. = 15.5 GHz
20 V
24 V
28 V
16 dBm
17 dBm
18 dBm
19 dBm
20 dBm
I
DQ
= 225 mA
V
D
= 28 V, I
DQ
= 225 mA
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18 20
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
Input Power (dBm)
Frequency (GHz)
43
41
39
37
35
33
31
29
27
25
23
21
19
17
15
Output Power vs. Input Power vs. Freq.
Temp. = 25 °
C
V
D
= 28 V, I
DQ
= 225 mA
Output Power (dBm)
13.75 GHz
14.50 GHz
15.50 GHz
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18 20
Input Power (dBm)
Preliminary Datasheet: Rev – B, 06-13-17
© 2017 Qorvo
- 5 of 15 -
Disclaimer: Subject to change without notice
www.qorvo.com
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