IRFD9210, SiHFD9210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 200
V
GS
= - 10 V
8.9
2.1
3.9
Single
S
FEATURES
• Dynamic dV/dt Rating
3.0
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
HVMDIP
G
DESCRIPTION
The Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design archieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1
"
pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HVMDIP
IRFD9210PbF
SiHFD9210-E3
IRFD9210
SiHFD9210
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
Energy
b
V
GS
at - 10 V
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
- 200
± 20
- 0.40
- 0.25
- 3.2
0.0083
210
- 0.40
0.10
1.0
- 5.0
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche
Repetitive Avalanche Current
a
Energy
a
dV/dt
c
Maximum Power Dissipation
Peak Diode Recovery
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 50 V, starting T
J
= 25 °C, L = 123 mH, R
g
= 25
,
I
AS
= - 1.6 A (see fig. 12).
c. I
SD
- 2.3 A, dI/dt
70 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
www.vishay.com
1
IRFD9210, SiHFD9210
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
R
thJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= - 250 µA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 µA
V
GS
= ± 20 V
V
DS
= - 200 V, V
GS
= 0 V
V
DS
= - 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 0.24 A
b
- 200
-
- 2.0
-
-
-
-
0.27
-
- 0.23
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
3.0
-
V
V/°C
V
nA
µA
S
V
DS
= - 50 V, I
D
= - 0.24 A
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
I
D
= - 1.3 A, V
DS
= - 160 V
see fig. 6 and 13
b
-
-
-
-
170
54
16
-
-
-
8.0
12
11
13
4.0
6.0
-
-
-
8.9
2.1
3.9
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
-
-
-
V
DD
= - 100 V, I
D
= - 2.3 A
R
g
= 24
,
R
D
= 41
see fig. 10
b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
-
-
-
S
G
-
-
-
-
-
-
-
-
110
0.56
- 0.40
A
- 3.2
- 5.8
220
1.1
V
ns
µC
G
S
T
J
= 25 °C, I
S
= - 0.40 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 2.3 A, dI/dt = 100 A/µs
b
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 µs; duty cycle
2 %.
www.vishay.com
2
Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
IRFD9210, SiHFD9210
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
T
A
= 25 °C
Fig. 1 - Typical Output Characteristics, T
A
= 25 °C
Fig. 3 - Typical Transfer Characteristics
T
A
= 150 °C
Fig. 2 - Typical Output Characteristics, T
A
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
www.vishay.com
3
IRFD9210, SiHFD9210
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
T
A
= 25 °C
T
J
= 150 °C
SINGLE PULSE
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
IRFD9210, SiHFD9210
Vishay Siliconix
R
D
V
DS
V
GS
R
g
D.U.T.
+
-
- 10
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
V
DD
I
D
, Drain Current (A)
Fig. 10a - Switching Time Test Circuit
t
d(on)
V
GS
10
%
t
r
t
d(off)
t
f
T
A
, Ambient Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
90
%
V
DS
Fig. 10b - Switching Time Waveforms
Thermal Response (Z
thJA
)
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
L
Vary
t
p
to obtain
required I
AS
R
g
V
DS
I
AS
D.U.T.
I
AS
V
DS
-
+
V
DD
V
DD
0.01
W
- 10
V
t
p
t
p
V
DS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
Fig. 12b - Unclamped Inductive Waveforms
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