CY62168EV30 MoBL
®
16-Mbit (2 M × 8) Static RAM
16-Mbit (2 M × 8) Static RAM
Features
■
■
■
Very high speed: 45 ns
Wide voltage range: 2.20 V to 3.60 V
Ultra low standby power
❐
Typical standby current: 1.5 µA
❐
Maximum standby current: 12 µA
Ultra low active power
❐
Typical active current: 2.2 mA at f = 1 MHz
Easy memory expansion with CE
1
, CE
2
and OE features
Automatic power-down when deselected
CMOS for optimum speed/power
Offered in Pb-free 48-ball FBGA package. For Pb-free 48-pin
TSOP I package, refer to
CY62167EV30
data sheet.
consumption by 90% when addresses are not toggling. Placing
the device into standby mode reduces power consumption by
more than 99% when deselected (Chip Enable 1 (CE
1
) HIGH or
Chip Enable 2 (CE
2
) LOW). The input and output pins (I/O
0
through I/O
7
) are placed in a high impedance state when: the
device is deselected (Chip Enable 1 (CE
1
) HIGH or
Chip Enable 2 (CE
2
) LOW), outputs are disabled (OE HIGH), or
a write operation is in progress (Chip Enable 1 (CE
1
) LOW and
Chip Enable 2 (CE
2
) HIGH and WE LOW).
Write to the device by taking Chip Enable 1 (CE
1
) LOW and
Chip Enable 2 (CE
2
) HIGH and the Write Enable (WE) input
LOW. Data on the eight I/O pins (I/O
0
through I/O
7
) is then written
into the location specified on the address pins (A
0
through A
20
).
Read from the device by taking Chip Enable 1 (CE
1
) and
Output Enable (OE) LOW and Chip Enable 2 (CE
2
) HIGH while
forcing Write Enable (WE) HIGH. Under these conditions, the
contents of the memory location specified by the address pins
will appear on the I/O pins.
The eight input and output pins (I/O
0
through I/O
7
) are placed in
a high impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or a
write operation is in progress (CE
1
LOW and CE
2
HIGH and WE
LOW). See the
Truth Table on page 11
for a complete description
of read and write modes.
For a complete list of related documentation, click
here.
■
■
■
■
■
Functional Description
The CY62168EV30 is a high performance CMOS static RAM
organized as 2 M words by 8-bits. This device features advanced
circuit design to provide an ultra low active current. This is ideal
for providing More Battery Life (MoBL
) in portable
applications such as cellular telephones. The device also has an
automatic power-down feature that significantly reduces power
Logic Block Diagram
CE1
CE2
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
WE
OE
DATA IN DRIVERS
ROW DECODER
I/O 0
I/O 1
SENSE AMPS
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
2M x 8
ARRAY
COLUMN DECODER
POWER
DOWN
I/O 7
A13
A14
A15
A16
A17
A19
A20
A18
Cypress Semiconductor Corporation
Document Number: 001-07721 Rev. *I
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised July 20, 2015
CY62168EV30 MoBL
®
Contents
Pin Configuration ............................................................. 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
DC Electrical Characteristics .......................................... 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagram ............................................................ 13
Acronyms ........................................................................ 14
Document Conventions ................................................. 14
Units of Measure ....................................................... 14
Document History Page ................................................. 15
Sales, Solutions, and Legal Information ...................... 17
Worldwide Sales and Design Support ....................... 17
Products .................................................................... 17
PSoC® Solutions ...................................................... 17
Cypress Developer Community ................................. 17
Technical Support ..................................................... 17
Document Number: 001-07721 Rev. *I
Page 2 of 17
CY62168EV30 MoBL
®
Pin Configuration
Figure 1. 48-ball FBGA pinout (Top View)
[1]
1
NC
NC
I/O
0
V
SS
V
CC
I/O
3
NC
A
18
2
OE
NC
NC
I/O
1
I/O
2
NC
A
20
A
8
3
A
0
A
3
A
5
A
17
NC
A
14
A
12
A
9
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
1
NC
I/O
5
I/O
6
NC
WE
A
11
6
CE
2
NC
I/O
4
V
CC
V
SS
I/O
7
NC
A
19
A
B
C
D
E
F
G
H
Product Portfolio
Power Dissipation
Product
Min
CY62168EV30LL
2.2
V
CC
Range (V)
Typ
[2]
3.0
Max
3.6
45
Speed
(ns)
Operating I
CC
(mA)
f = 1 MHz
Typ
[2]
2.2
Max
4.0
25
f = f
max
Typ
[2]
Max
30
Standby I
SB2
(μA)
Typ
[2]
1.5
Max
12
Notes
1. NC pins are not connected on the die.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
Document Number: 001-07721 Rev. *I
Page 3 of 17
CY62168EV30 MoBL
®
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage
to ground potential
[3, 4]
............... –0.3 V to V
CC(max)
+ 0.3 V
DC voltage applied to outputs
in high Z state
[3, 4]
.......................–0.3 V to V
CC(max)
+ 0.3 V
DC input voltage
[3, 4]
................. –0.3 V to V
CC
(max) + 0.3 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL-STD-883, method 3015) ................................. > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
Range
Industrial
Ambient Temperature (T
A
)
[5]
–40 °C to +85 °C
V
CC
[6]
2.2 V to 3.6 V
DC Electrical Characteristics
Over the operating range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1[8]
Description
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
CC
operating supply current
Test Conditions
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
Automatic CE power-down
current – CMOS inputs
V
CC
= 3.6 V,
I
OUT
= 0 mA,
CMOS level
I
OH
=
−0.1
mA
I
OH
=
−1.0
mA
I
OL
= 0.1 mA
I
OH
= 2.1 mA
CY62168EV30-45
Min
2.0
2.4
–
–
1.8
2.2
–0.3
–0.3
–1
–1
–
–
–
Typ
[7]
–
–
–
–
–
–
–
–
–
–
25
2.2
1.5
Max
–
–
0.4
0.4
V
CC
+ 0.3
V
CC
+ 0.3
0.6
0.8
+1
+1
30
4.0
12
µA
V
V
V
µA
µA
mA
Unit
V
CE
1
> V
CC
−
0.2 V or CE
2
< 0.2 V,
V
IN
> V
CC
−
0.2 V, V
IN
< 0.2 V,
f = f
MAX
(address and data only),
f = 0 (OE, WE)
CE
1
> V
CC
−
0.2 V or CE
2
< 0.2 V,
V
IN
> V
CC
−
0.2 V or V
IN
< 0.2 V, f = 0,
V
CC
= 3.6 V
I
SB2[8]
Automatic CE power-down
current – CMOS inputs
–
1.5
12
µA
Notes
3. V
IL
(min) = –2.0 V for pulse durations less than 20 ns.
4. V
IH
(max) = V
CC
+ 0.75 V for pulse durations less than 20 ns.
5. T
A
is the “Instant-On” case temperature.
6. Full device AC operation assumes a 100 µs ramp time from 0 to V
CC
(min) and 200 µs wait time after V
CC
stabilization.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
(typ), T
A
= 25 °C.
8. Chip enables (CE
1
and CE
2
) must be at CMOS level to meet the I
SB1
/ I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
Document Number: 001-07721 Rev. *I
Page 4 of 17
CY62168EV30 MoBL
®
Capacitance
Parameter
[9]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
Max
8
10
Unit
pF
pF
Thermal Resistance
Parameter
[9]
Θ
JA
Θ
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Still air, soldered on a 3 × 4.5 inch, four-layer printed circuit
board
48-ball FBGA
52.3
7.91
Unit
°C/W
°C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R2
ALL INPUT PULSES
V
CC
GND
10%
90%
90%
10%
Fall time: 1 V/ns
Rise Time: 1 V/ns
Equivalent to:
THÉVENIN EQUIVALENT
R
TH
V
TH
OUTPUT
Parameters
R1
R2
R
TH
V
TH
2.5 V (2.2 V to 2.7 V)
16600
15400
8000
1.2
3.0 V (2.7 V to 3.6 V)
1103
1554
645
1.75
Unit
Ω
Ω
Ω
V
Note
9. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 001-07721 Rev. *I
Page 5 of 17
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