SO
T2
BFR505
NPN 9 GHz wideband transistor
Rev. 4 — 7 September 2011
Product data sheet
1. Product profile
1.1 General description
The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the
RF front end in wideband applications in the GHz range, such as analog and digital
cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers
and satellite TV tuners (SATV).
The transistor is encapsulated in a plastic SOT23 envelope.
3
1.2 Features and benefits
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
1.3 Quick reference data
Table 1.
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
Quick reference data
Conditions
open emitter
R
BE
= 0
Min
-
-
-
up to T
s
= 135
C
I
C
= 5 mA; V
CE
= 6 V
I
C
= i
c
= 0 A; V
CB
= 6 V; f = 1 MHz
[1]
Symbol Parameter
collector-base
voltage
collector-emitter
voltage
DC collector
current
total power
dissipation
DC current gain
feedback
capacitance
Typ
-
-
-
-
120
0.3
9
17
10
14
Max
20
15
18
150
250
-
-
-
-
-
Unit
V
V
mA
mW
-
60
-
-
-
-
13
pF
GHz
dB
dB
dB
transition frequency I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz
maximum unilateral I
C
= 5 mA; V
CE
= 6 V;
power gain
T
amb
= 25
C;
f = 900 MHz
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C;
f = 2 GHz
S
21
2
insertion power
gain
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C;
f = 900 MHz
NXP Semiconductors
BFR505
NPN 9 GHz wideband transistor
Quick reference data
…continued
Conditions
s
=
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
T
amb
= 25
C;
f = 900 MHz
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C;
f = 900 MHz
s
=
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
T
amb
= 25
C;
f = 2 GHz
Min
-
-
-
Typ
1.2
1.6
1.9
Max
1.7
2.1
-
Unit
dB
dB
dB
noise figure
Table 1.
F
Symbol Parameter
[1]
T
s
is the temperature at the soldering point of the collector tab.
2. Pinning information
Table 2.
Pin
1
2
3
Discrete pinning
Description
base
emitter
collector
1
2
2
sym021
Simplified outline
3
Symbol
3
1
3. Ordering information
Table 3.
Ordering information
Package
Name
BFR505
-
Description
plastic surface mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
BFR505
[1]
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Marking table
Marking code
[1]
31*
Type number
BFR505
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 7 September 2011
2 of 14
NXP Semiconductors
BFR505
NPN 9 GHz wideband transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
R
BE
= 0
continuous
up to T
s
= 135
C
[1]
Min
-
-
-
-
-
65
-
Max
20
15
2.5
18
150
+150
175
Unit
V
V
V
mA
mW
C
C
T
s
is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-s)
[1]
Thermal characteristics
Parameter
from junction to soldering point
Conditions
[1]
Typ
260
Unit
K/W
T
s
is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain
Conditions
I
C
= 5 mA; V
CE
= 6 V
I
C
= i
c
= 0 A; V
EB
= 0.5 V;
f = 1 MHz
I
E
= i
e
= 0 A; V
CB
= 6 V;
f = 1 MHz
I
C
= i
c
= 0 A; V
CB
= 6 V;
f = 1 MHz
I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C;
f = 900 MHz
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C;
f = 2 GHz
S
21
2
insertion power gain
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C;
f = 900 MHz
[1]
Min
-
60
-
-
-
-
-
-
13
Typ
-
120
0.4
0.4
0.3
9
17
10
14
Max
50
250
-
-
-
-
-
-
-
Unit
nA
pF
pF
pF
GHz
dB
dB
dB
collector cut-off current I
E
= 0 A; V
CB
= 6 V
BFR505
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 7 September 2011
3 of 14
NXP Semiconductors
BFR505
NPN 9 GHz wideband transistor
Table 7.
Characteristics
…continued
T
j
= 25
C unless otherwise specified.
Symbol Parameter
F
noise figure
Conditions
s
=
opt
; I
C
= 5 mA;
V
CE
= 6 V;T
amb
= 25
C;
f = 900 MHz
s
=
opt
; I
C
= 5 mA;
V
CE
= 6 V;
T
amb
= 25
C;
f = 900 MHz
s
=
opt
; I
C
= 5 mA;
V
CE
= 6 V;
T
amb
= 25
C;
f = 2 GHz
P
L1
output power at 1 dB
gain compression
third order intercept
point
I
C
= 5 mA; V
CE
= 6 V;
R
L
= 50
;
T
amb
= 25
C;
f = 900 MHz
[2]
Min
-
Typ
1.2
Max
1.7
Unit
dB
-
1.6
2.1
dB
-
1.9
-
dB
-
4
-
dBm
ITO
-
10
-
dBm
[1]
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
[2]
S
21
=
10
log
------------------------------------------------------
dB
2
2
1
–
S
11
1
–
S
22
2
I
C
= 5 mA; V
CE
= 6 V; R
L
= 50
;
T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2pq)
= 898 MHz
and f
(2qp)
= 904 MHz.
200
P
tot
(mW)
150
mra718
250
h
FE
200
mra719
150
100
100
50
50
0
0
50
100
150
T
s
(°C)
200
0
10
−3
10
−2
10
−1
1
10
10
2
I
C
(mA)
V
CE
= 6 V.
Fig 1.
Power derating curve.
Fig 2.
DC current gain as a function of collector
current.
BFR505
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 7 September 2011
4 of 14
NXP Semiconductors
BFR505
NPN 9 GHz wideband transistor
0.4
C
re
(pF)
0.3
mra720
12
f
T
(GHz)
8
mra721
(1)
(2)
0.2
4
0.1
0
0
2
4
6
8
10
V
CB
(V)
0
10
−1
1
10
I
C
(mA)
10
2
I
C
= 0 A; f = 1 MHz.
T
amb
= 25
C;
f = 1 GHz.
(1) V
CE
= 6 V.
(2) V
CE
= 3 V.
Fig 3.
Feedback capacitance as a function of
collector-base voltage.
25
mra764
Fig 4.
Transition frequency as a function of collector
current.
25
mra765
gain
(dB)
20
(1)
(2)
gain
(dB)
20
15
15
10
10
(1)
(2)
(3)
5
5
0
0
4
8
I
C
(mA)
12
0
0
4
8
I
C
(mA)
12
V
CE
= 6 V; f = 900 MHz.
(1) MSG.
(2) G
UM
.
V
CE
= 6 V; f = 2 GHz.
(1) MSG.
(2) G
max
.
(3) G
UM
.
Fig 5.
Gain as a function of collector current.
Fig 6.
Gain as a function of collector current.
BFR505
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 7 September 2011
5 of 14
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