VS-SD200N/R Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 200 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC
®
types
• Compression bonded encapsulations
DO-30 (DO-205AC)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
200 A
DO-30 (DO-205AC)
Single
• Converters
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
TEST CONDITIONS
VS-SD200N/R
1600 to 2000
200
T
C
110
314
4700
4920
110
101
1600 to 2000
-40 to +180
2400
200
110
314
4700
4920
110
101
2400
+150
kA
2
s
V
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
16
VS-SD200N/R
20
24
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1600
2000
2400
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
2100
2500
15
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Jan-18
Document Number: 93541
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD200N/R Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
I
F(AV)
180° conduction, half sine wave
SYMBOL
TEST CONDITIONS
VALUES
200
110
220
100
I
F(RMS)
DC at 95 °C case temperature
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
Öt
for fusing
I
2
Öt
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial
T
J
= T
J
maximum
314
4700
4920
3950
4140
110
101
78
71
1100
0.90
1.00
0.79
0.64
1.40
V
mW
kA
2
Ös
V
kA
2
s
A
UNITS
A
°C
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 630 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed
mounting torque ± 10 %
Approximate weight
Case style
See dimensions (link at the end of datasheet)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
TEST CONDITIONS
SD200N/R
1600 to 2000
-40 to 180
2400
-40 to 150
UNITS
°C
-55 to 200
0.23
K/W
0.08
14
120
DO-30 (DO-205AC)
Nm
g
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.041
0.049
0.063
0.093
0.156
RECTANGULAR CONDUCTION TEST CONDITIONS
0.030
0.051
0.068
0.096
0.157
T
J
= T
J
maximum
K/W
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93541
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD200N/R Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case T
emperature (°C)
180
170
160
150
140
130
120
110
100
90
0
50
100
150
200
250
300
350
60°
30°
90°
120°
180°
DC
Conduction Period
SD200N/R Series
R
thJC
(DC) = 0.23 K/W
Maximum Allowable Case Temperature (°C)
180
170
160
150
140
130
120
110
SD200N/R Series
R
thJC
(DC) = 0.23 K/W
Conduction Angle
30°
100
0
40
80
60° 90° 120°
180°
120
160
200
240
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
300
250
200
150
Conduction Angle
100
50
0
0
50
100
150
200
250
40
60
80
100 120 140 160 180
SD200N/R Series
T
j
= T
j
max
180°
120°
90°
60°
30°
RMS Limit
R
t
W
K/
12
W
K/
0.
0.
0.
0.
4
A
h
S
2
3
K/
W
K/
W
=
0.0
/W
8K
0.6
-
Δ
K/
W
R
0.8
K/W
/W
1.4 K
1.8 K
/W
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
400
350
300
250
200
RMS Limit
150
100
50
0
0
50
100
150
200
250
300
350 40
60
80
100 120 140 160 180
SD200N/R Series
T
j
= T
j
max
Conduction Period
DC
180°
120°
90°
60°
30°
Rt
A
h
S
=
0
0.
W
K/
8
W
K/
-D
ta
el
R
1
0.
2
0.
2
0.
3
0.4
W
K/
W
K/
K/
0.6
W
K/W
0.8
K/W
1.4 K
/W
1.8 K/W
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93541
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD200N/R Series
www.vishay.com
Vishay Semiconductors
Peak Half
Sine
Wave Forward Current (A)
5000
4500
4000
3500
3000
2500
2000
1500
SD200N/R Series
Maximum Non Repetitive
Surge
Current
Versus Pulse Train Duration.
Initial T
j
= T
j
max.
No Voltage Reapplied
Rated V
rrm
Reapplied
Peak Half
Sine
Wave Forward Current (A)
4500
4000
3500
3000
2500
2000
1500
1000
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following
Surge.
Initial T
j
= T
j
max.
@ 60 Hz 0.0083
s
@ 50 Hz 0.0100
s
SD200N/R Series
10
100
1000
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
10 000
Instantaneous Forward Current (A)
SD200N/R Series
1000
T
j
= 25 °C
T
j
= T
j
max.
100
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
1
Steady State
Value:
R
thJC
= 0.23 K/W
(DC Operation)
0.1
SD200N/R Series
0.01
0.001
0.01
0.1
1
10
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Revision: 11-Jan-18
Document Number: 93541
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD200N/R Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
SD
2
20
3
0
4
N
5
24
6
P
7
C
8
1
2
3
4
5
6
7
8
-
-
-
-
-
Vishay Semiconductors product
Diode
Essential part number
0 = standard recovery
N = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
-
-
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
P = stud base DO-30 (DO-205AC) 1/2" 20UNF-2A
M = stud base DO-30 (DO-205AC) M12 x 1.75
-
C = ceramic housing
For metric device M12 x 1.75 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95302
Revision: 11-Jan-18
Document Number: 93541
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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