®
BTA10 and BTB10 Series
10A TRIAC
S
A2
SNUBBERLESS™ & STANDARD
Table 1: Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
Value
10
600 and 800
25 to 50
Unit
A
V
mA
G
A1
A2
DESCRIPTION
Available either in through-hole or surface-mount
packages, the
BTA10
and
BTB10
triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in applica-
tions such as static relays, heating regulation, in-
duction motor starting circuits... or for phase
control operation in light dimmers, motor speed
controllers,...
The snubberless version (W suffix) is specially
recommended for use on inductive loads, thanks
to their high commutation performances.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at
2500V
RMS
) complying with UL standards (File ref.:
E81734).
Table 3: Absolute Maximum Ratings
Symbol
I
T(RMS)
I
TSM
I
²
t
dI/dt
Parameter
RMS on-state current (full sine
wave)
A1
A2
G
A1
A2
G
TO-220AB Insulated
(BTA10)
TO-220AB
(BTB10)
Table 2: Order Codes
Part Number
BTA10-xxxxxRG
BTB10-xxxxxRG
Marking
See page table 8 on
page 6
Value
T
c
= 105°C
t = 20 ms
t = 16.7 ms
10
100
105
55
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
50
V
DSM
/V
RSM
+ 100
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A
²
s
A/µs
V
A
W
°C
TO-220AB
TO-220AB Ins. T
c
= 95°C
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, T
j
initial = 25°C) F = 60 Hz
t
p
= 10 ms
I
²
t Value for fusing
Critical rate of rise of on-state cur-
rent I
G
= 2 x I
GT
, t
r
≤
100 ns
F = 120 Hz
V
DSM
/V
RSM
Non repetitive surge peak off-state t
p
= 10 ms
voltage
I
GM
P
G(AV)
T
stg
T
j
February 2006
Peak gate current
Average gate power dissipation
t
p
= 20 µs
Storage junction temperature range
Operating junction temperature range
REV. 6
1/7
BTA10 and BTB10 Series
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
■
SNUBBERLESS (3 quadrants)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
Test Conditions
V
D
= 12 V R
L
= 33
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open T
j
= 125°C
T
j
= 125°C
I - III
II
T
j
= 125°C
Quadrant
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
35
50
60
500
5.5
BTA10 / BTB10
CW
35
1.3
0.2
50
70
80
1000
9.0
BW
50
Unit
mA
V
V
mA
mA
V/µs
A/ms
(dI/dt)c (2) Without snubber
■
Standard (4 quadrants)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open T
j
= 125°C
T
j
= 125°C
I - III - IV
II
Test Conditions
Quadrant
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
25
40
80
200
5
BTA10 / BTB10
C
25
50
1.3
0.2
50
50
100
400
10
B
50
100
Unit
mA
V
V
mA
mA
V/µs
V/µs
V
D
= 12 V
R
L
= 33
Ω
(dV/dt)c (2) (dI/dt)c = 4.4 A/ms
Table 5: Static Characteristics
Symbol
V
T
(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 14 A
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Test Conditions
t
p
= 380 µs
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
40
5
1
Unit
V
V
mΩ
µA
mA
Note 1:
minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
2/7
BTA10 and BTB10 Series
Table 6: Thermal resistance
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Parameter
TO-220AB
TO-220AB Insulated
TO-220AB
TO-220AB Insulated
Value
1.5
2.4
60
Unit
°C/W
Junction to ambient
°C/W
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
P(W)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
Figure 2: RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
12
11
10
9
8
7
6
5
4
3
2
BTA
BTB
I
T(RMS)
(A)
4
5
6
7
8
9
10
1
0
0
25
50
T
C
(°C)
75
100
125
Figure 3: Relative variation of thermal
impedance versus pulse duration
K=[Z
th
/R
th
]
1E+0
Z
th(j-c)
Figure 4: On-state characteristics (maximum
values)
I
TM
(A)
100
T
j
max.
V
t0
= 0.85V
R
d
= 40 m
Ω
T
j
= T
j
max.
Z
th(j-a)
1E-1
10
T
j
= 25°C
1E-2
1E-3
1E-2
1E-1
t
p
(s)
1
1E+0
1E+1
1E+2
5E+2
V
TM
(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3/7
BTA10 and BTB10 Series
Figure 5: Surge peak on-state current versus
number of cycles
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
and corresponding value of I
2
t
I
TSM
(A), I t (A s)
1000
T
j
initial=25°C
2
2
I
TSM
(A)
110
100
90
80
70
60
50
40
30
20
10
0
1
Non repetitive
T
j
initial=25°C
t=20ms
One cycle
dI/dt limitation:
50A/µs
I
TSM
100
Repetitive
T
C
=95°C
I
2
t
Number of cycles
10
100
1000
t
p
(ms)
10
0.01
0.10
1.00
10.00
Figure 7: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
2.0
I
GT
Figure 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
B
C
1.5
1.0
0.5
I
H
& I
L
1.4
1.2
1.0
0.8
BW/CW
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
0.6
(dV/dt)c (V/µs)
0.4
0.1
1.0
10.0
100.0
Figure 9: Relative variation of critical rate of
decrease of main current versus junction
temperature
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
4
3
2
1
T
j
(°C)
0
0
25
50
75
100
125
4/7
BTA10 and BTB10 Series
Figure 10: Ordering Information Scheme
BT A 10 - 600 BW RG
Triac series
Insulation
A = insulated
B = non insulated
Current
10 = 10A
Voltage
600 = 600V
800 = 800V
Sensitivity and type
B = 50mA Standard
C = 25mA Standard
Packing mode
RG = Tube
BW = 50mA Snubberless
CW = 35mA Snubberless
Table 7: Product Selector
Part Number
BTA/BTB10-xxxB
BTA/BTB10-xxxBW
BTA/BTB10-xxxC
BTA/BTB10-xxxCW
BTB:
non insulated TO-220AB package
Voltage (xxx)
600 V
X
X
X
X
800 V
X
X
X
X
Sensitivity
50 mA
50 mA
25 mA
35 mA
Type
Standard
Snubberless
Standard
Snubberless
Package
TO-220AB
TO-220AB
TO-220AB
TO-220AB
5/7
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