SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4998, REV. -
SBF50P10-023L
RAD TOLERANT LOW R
DS
HERMETIC
POWER MOSFET - P-CHANNEL
FEATURES:
•
100 Volt, 0.023 Ohm, 90A MOSFET (current limited to 50A by package)
•
Characterized for V
GS
of 4.5V for Logic Level Drive
•
Total Dose Characterized to 300 Krad
•
Single Event Effect Capability Characterized to 60 MeVcm
2
/mg LET
•
Isolated Hermetic Metal Package; Ultra Low R
DS (on)
•
Ceramic Seals with Glidcop leads
•
Also available with glass seals and copper core alloy 52 leads
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25°C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D25
I
DM
T
J
/T
STG
P
D
R
θJC
MIN.
-
-
-
-55
-
-
TYP.
-
-
-
-
-
-
MAX.
±20
- 50
- 90
+150
225
0.55
UNITS
Volts
Amps
Amps
°C
Watts
°C/W
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= - 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= - 10V, I
D
= - 20A
V
GS
= - 4.5V, I
D
= - 15A
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= - 250µA
FORWARD TRANSCONDUCTANCE
V
DS
= - 15V, I
D
= - 20A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x Max. rating, V
GS
= 0V, T
J
= 25°C
T
J
= 125°C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
TURN ON DELAY TIME
V
DD
= - 50V
RISE TIME
I
D
= - 50A
TURN OFF DELAY TIME
V
GS
= - 10V
FALL TIME
R
G
= 1Ω
DIODE FORWARD VOLTAGE
I
F
= - 20A, V
GS
= 0V
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
REVERSE RECOVERY TIME
T
J
= 25°C,
I
F
= - 20A, V
R
= - 50V
di/dt = - 100A/µsec
INPUT CAPACITANCE
V
GS
= 0 V,
OUTPUT CAPACITANCE
V
DS
= - 50 V,
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
SYMBOL
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
C
iss
C
oss
C
rss
MIN.
-100
-
-
-1
-
-
-
-
TYP.
-
0.019
0.021
-
80
-
-
20
510
145
870
- 1.0
80
11100
700
1700
MAX.
-
0.023
0.025
-3
-
-1
- 500
100
-100
30
855
220
1300
- 1.5
120
-
pF
UNITS
Volts
Ω
Volts
S(1/Ω)
µA
nA
nsec
-
-
-
Volts
nsec
•221
WEST INDUSTRY COURT
•
DEER PARK, NY 11729-4681
•
PHONE (631) 586-7600
•
FAX (631) 242-9798•
•
World Wide Web Site - www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SBF50P10-023L
SENSITRON
TECHNICAL DATA
DATA SHEET 4998, REV. -
Post-Total Dose (up to TID ratings) Irradiation Data
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= -250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= -10V, I
D
= -20A
V
GS
= - 4.5V, I
D
= - 15A
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= -250µA
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x Max. rating, V
GS
= 0V, T
J
= 25°C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
DIODE FORWARD VOLTAGE
I
F
= -20A, V
GS
= 0V
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
SYMBOL
BV
DSS
R
DS(ON)
V
GS(th)
I
DSS
I
GSS
V
SD
MIN.
-100
-
-1
-
-
-
TYP.
-
0.019
0.021
-
-
-
- 1.0
MAX.
-
0.023
0.025
-3
-1
100
-100
-1.5
UNITS
Volts
Ω
Volts
µA
nA
Volts
Single Event Effect Safe Operating Area
Ion
Br
I
LET
(MeVcm /mg)
2
37.47
59.72
Energy
(MeV)
278
320
Range
(µm)
36.1
31.1
V
GS
=0V
-100
-100
V
GS
= 5V
-100
-100
V
DS
(V)
V
GS
= 10V
-100
-100
V
GS
= 15V
-100
-100
V
GS
= 20V
-100
-100
SEE Safe Operation Area
-120
-100
-80
VDS (V)
Br
I
-60
-40
-20
0
0
5
10
VGS (V)
15
20
•221
WEST INDUSTRY COURT
•
DEER PARK, NY 11729-4681
•
PHONE (631) 586-7600
•
FAX (631) 242-9798•
•
World Wide Web Site - www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SBF50P10-023L
SENSITRON
TECHNICAL DATA
DATA SHEET 4998, REV. -
MECHANICAL DIMENSIONS: in Inches / mm
TO-254CG
(Modified)
PINOUT TABLE
DEVICE TYPE
P-CHANNEL MOSFET
MODIFIED TO-254
PACKAGE
PIN-1
DRAIN
PIN-2
SOURCE
PIN-3
GATE
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of
Sensitron Semiconductor.
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hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
•221
WEST INDUSTRY COURT
•
DEER PARK, NY 11729-4681
•
PHONE (631) 586-7600
•
FAX (631) 242-9798•
•
World Wide Web Site - www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
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