VS-6CUT04, VS-6CWT04FN
www.vishay.com
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 3 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
I-PAK (TO-251AA)
Base
common
cathode
4
D-PAK (TO-252AA)
Base
common
cathode
4
• Extremely low reverse leakage
• Optimized V
F
vs. I
R
trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
3
1
Anode
Anode
2
Common
cathode
2
Common
3
1
Anode cathode Anode
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
VS-6CUT04
VS-6CWT04FN
APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA),
I-PAK (TO-251AA)
2x3A
45 V
0.54 V
3 mA at 125 °C
175 °C
Common cathode
14 mJ
• Specific for PV cells pybass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
V
F
T
J
3 Apk, T
J
= 125 °C (typical, per leg)
Range
CHARACTERISTICS
VALUES
45
0.46
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
VS-6CUT04
VS-6CWT04FN
45
UNITS
V
Revision: 03-Nov-11
Document Number: 94650
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CUT04, VS-6CWT04FN
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 166 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3
6
440
A
70
14
I
AS
at
T
J
max.
mJ
UNITS
A
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche
energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 1.3 A, L = 16 mH
Limited by frequency of operation and time pulse duration
so that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
(see fig. 8)
I
AR
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Forward voltage drop per leg
V
FM (1)
6A
3A
6A
Reverse leakage current per leg
Junction capacitance per leg
Series inductance per leg
Maximum voltage rate of change
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
TYP.
0.535
0.615
0.485
0.570
-
-
240
8.0
-
MAX.
0.600
0.680
0.540
0.640
25
3
-
-
10 000
μA
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
Approximate weight
Case style I-PAK
Case style D-PAK
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
VALUES
- 55 to 175
4.7
R
thJC
DC operation
2.35
R
thCS
0.3
0.3
0.01
6CUT04
6CWT04FN
g
oz.
°C/W
UNITS
°C
Marking device
Revision: 03-Nov-11
Document Number: 94650
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CUT04, VS-6CWT04FN
www.vishay.com
I
F
- Instantaneous Forward Current (A)
Vishay Semiconductors
10
175 °C
100
I
R
- Reverse Current (mA)
1
150 °C
125 °C
10
0.1
100 °C
75 °C
50 °C
0.01
1
T = 175 °C
T = 125 °C
T = 25 °C
0.001
25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0001
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
T
C
T
- Junction Capacitance (pF)
100
10
0
5
10
15
20
25
30
35
40
45
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Z
thJC
- Thermal Response
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single
Pulse
(Thermal Resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
0.1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 03-Nov-11
Document Number: 94650
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CUT04, VS-6CWT04FN
www.vishay.com
2.5
D = 3/4
D = 1/2
D = 1/3
D = 1/4
D = 1/5
RMS Limit
1
Vishay Semiconductors
Allowable Case Temperature (°C)
180
Average Power Loss (W)
175
170
165
160
155
150
145
0
1
2
3
4
5
Square
wave (D = 0.50)
80 % rated V
r
applied
see
note
(1)
2
DC
DC
1.5
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Average Forward Current - I
F(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 03-Nov-11
Document Number: 94650
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CUT04, VS-6CWT04FN
www.vishay.com
Vishay Semiconductors
100
Avalanche Current (A)
10
T
J
= 25 °C
1
T
J
= 125 °C
T
J
= 175 °C
0.1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Avalanche Energy (mJ)
T
J
= 25 °C
10
T
J
= 125 °C
T
J
= 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Revision: 03-Nov-11
Document Number: 94650
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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