VS-SD400N/R Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 400 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC
®
types
• Compression bonded encapsulations
DO-9 (DO-205AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
400 A
DO-9 (DO-205AB)
Single
TYPICAL APPLICATIONS
• Converters
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
480
120
630
8250
8640
340
311
1600 to 2400
-40 to +190
kA
2
s
V
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
16
VS-SD400N/R
20
24
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1600
2000
2400
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
2100
2500
15
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Jan-18
Document Number: 93548
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD400N/R Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
TEST CONDITIONS
VALUES
400
I
F(AV)
180° conduction, half sine wave
120
480
100
I
F(RMS)
DC at 110 °C case temperature
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial
T
J
= T
J
maximum
630
8250
8640
6940
7270
340
311
241
220
3400
0.80
0.85
0.55
mW
0.51
1.62
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1500 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed
mounting torque ± 10 %
Approximate weight
Case style
See dimensions (link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
TEST CONDITIONS
VALUES
-40 to +190
-55 to +200
0.11
K/W
0.04
27
250
DO-9 (DO-205AB)
Nm
g
UNITS
°C
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.020
0.023
0.029
0.042
0.073
RECTANGULAR CONDUCTION
0.013
0.023
0.031
0.044
0.074
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93548
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD400N/R Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case T
emperature (°C)
190
180
170
160
150
140
130
120
110
100
0
100
200
300
400
500 600
700
Average Forward Current (A)
60°
30°
90°
120°
180°
DC
Conduction Period
Maximum Allowable Cas T
e emperature (°C)
190
180
170
160
150
140
130
120
S
D400N/ R S
eries
R
thJC
(DC) = 0.11 K/ W
S
D400N/ R S
eries
R
thJC
(DC) = 0.11 K/ W
Conduction Angle
60°
30°
0
90°
120°
180°
110
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
550
R
th
500
450
400
350
300
250
200
150
100
50
0
0
Conduction Angle
SD400N/R Series
T
J
= 190 °C
180°
120°
90°
60°
30°
0.
1
0.
0.
3
S
A
2
K/
K/
=0
W
W
.04
K/
K/
K/W
RMS Limit
0.4
W
R
-
Δ
W
0.6
K
/W
1K/W
1.8 K/
W
50 100 150 200 250 300 350 400 30 50 70 90 110 130 150 170 190
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
800
700
600
500
DC
180°
120°
90°
60°
30°
R
th
S
A
0.
0.2
=
1
K/
W
04
0.
K/
W
R
-
Δ
400 RMS Limit
300
200
100
0
0
100
200
300
K/
W
K/
W
0.4
K/W
Conduction Period
0.6
K/W
1K/W
SD400N/R Series
1.8
K/W
TJ = 190°C
0.3
400 500
600 700
30 50 70 90 110 130 150 170 190
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93548
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD400N/R Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave Forward Current (A)
ine
9000
8000
7000
6000
5000
4000
3000
2000
1000
0.01
S
D400N/ R S
eries
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 190°C
J
No Voltage R
eapplied
R
ated V
RRM
R
eapplied
Peak Half S Wave Forward Current (A)
ine
8000
7000
6000
5000
4000
3000
2000
1
At Any R
ated Load Condition And With
R
ated V
RRM
Applied Following S
urge.
Initial T = 190°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
S
D400N/ R S
eries
10
100
0.1
Pulse T
rain Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Instantaneous Forward Current (A)
S
D400N/ R S
eries
1000
T = 25°C
J
T = 190°C
J
100
0.5
1
1.5
2
2.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(K/ W)
1
0.1
S
teady S
tate Value:
R
thJC
= 0.11 K/ W
(DC Operation)
0.01
S
D400N/ R S
eries
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Revision: 11-Jan-18
Document Number: 93548
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD400N/R Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
-
-
-
-
-
SD
2
40
3
0
4
N
5
24
6
P
7
C
8
Vishay Semiconductors product
Diode
Essential part number
0 = standard recovery
N = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
6
7
8
-
-
-
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
P = stud base DO-9 (DO-205AB) 3/4" 16UNF-2A
C = ceramic housing
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95301
Revision: 11-Jan-18
Document Number: 93548
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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