IGA03N120H2
HighSpeed 2-Technology
C
•
•
Designed for:
- TV – Horizontal Line Deflection
2 generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=3A
- simple Gate-Control
1
nd
G
E
•
•
•
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
1200V
1200V
I
C
3A
3A
E
off
0.15mJ
0.15mJ
T
j,max
150°C
150°C
Marking
G03H1202
G03H1202
PG-TO220-3-31
(FullPAK)
PG-TO220-3-34
(FullPAK)
Type
IGA03N120H2
IGA03N120H2
Package
PG-TO-220-3-31
PG-TO-220-3-34
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector peak current (V
GS
= 15V)
T
C
= 100°C,
f
= 32kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150°C
Gate-emitter voltage
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Isolation Voltage
T
j
,
T
stg
-
V
isol
-40...+150
260
2500
V
r m s
°C
V
GE
P
tot
±20
29
V
W
I
Cpul s
-
Symbol
V
CE
I
Cpk
8.2
9
9
Value
1200
Unit
V
A
1
J-STD-020 and JESD-022
1
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 3 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
= 3 A
T
j
=2 5
°C
T
j
=1 5 0° C
V
G E
= 10 V ,
I
C
= 3 A,
T
j
=2 5
°C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 90
µA
,
V
C E
=
V
G E
V
C E
= 12 0 0V ,
V
G E
= 0V
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
= 25 V
V
G E
= 0V
f=
1 MH z
V
C C
= 96 0 V,
I
C
=3 A
V
G E
= 15 V
-
7
-
nH
-
-
-
-
205
24
7
8.6
-
-
-
-
nC
pF
I
GES
g
fs
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 3 A
-
-
-
-
-
-
-
2
20
80
100
-
nA
S
-
-
-
2.1
2.2
2.5
2.4
3
2.8
-
-
3.9
µA
1200
-
-
V
Symbol
Conditions
Value
min.
Typ.
max.
Unit
R
thJA
64
R
thJC
4.3
K/W
Symbol
Conditions
Max. Value
Unit
Power Semiconductors
2
Rev. 2.2
July 06
IGA03N120H2
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
V
C C
= 80 0 V,
I
C
=3 A
V
G E
= 0V / 15 V
R
G
= 82
Ω
2)
L
σ
= 18 0 nH
1)
C
σ
= 4 0p F
Energy losses include
2)
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
9.2
5.2
281
29
0.14
0.15
0.29
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
Typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C
V
C C
= 80 0 V,
I
C
=3 A
V
G E
= 0V / 15 V
R
G
= 82
Ω
1)
L
σ
=1 8 0n H
1)
C
σ
= 4 0p F
Energy losses include
3)
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
9.4
6.7
340
63
0.22
0.26
0.48
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
Typ.
max.
Unit
Switching Energy ZVT, Inductive Load
Parameter
IGBT Characteristic
Turn-off energy
E
off
V
C C
= 80 0 V,
I
C
=3 A
V
G E
= 0V / 15 V
R
G
= 82
Ω,
C
r
= 4 nF
T
j
=2 5
°C
T
j
=1 5 0° C
-
-
0.05
0.09
-
-
1)
Symbol
Conditions
Value
min.
typ.
max.
Unit
mJ
2)
3)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E
Commutation diode from device IKP03N120H2
3
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
12A
I
c
10A
10A
t
p
=10
µ
s
20
µ
s
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
8A
T
C
=25°C
T
C
=100°C
50
µ
s
1A
100
µ
s
1m s
0,1A
100m s
DC
0,01A
6A
4A
2A
I
c
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
0A
10Hz
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
30W
8A
P
tot
,
POWER DISSIPATION
20W
I
C
,
COLLECTOR CURRENT
6A
4A
10W
2A
0W
2 5°C
50°C
7 5°C
100°C
12 5°C
150°C
0A
25 °C
50°C
75°C
100°C
12 5°C
150°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
4
Rev. 2.2
July 06
IGA03N120H2
10A
10A
8A
8A
I
C
,
COLLECTOR CURRENT
6A
12V
10V
8V
6V
I
C
,
COLLECTOR CURRENT
V
GE
= 1 5 V
V
G E
=15V
6A
12V
10V
8V
4A
6V
4A
2A
2A
0A
0V
1V
2V
3V
4V
5V
0A
0V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
12A
3V
10A
I
C
=6A
I
C
=3A
I
C
,
COLLECTOR CURRENT
8A
T
j
=+150°C
T
j
=+25°C
2V
6A
I
C
=1.5A
4A
1V
2A
0A
3V
5V
7V
9V
0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 20V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev. 2.2
July 06
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