VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56..
www.vishay.com
Vishay Semiconductors
ADD-A-PAK Gen 7
Power Modules Standard Diodes, 60 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
ADD-A-PAK
PRODUCT SUMMARY
I
F(AV)
Type
Package
Circuit
60 A
Modules - Diode, High Voltage
ADD-A-PAK Gen 7
Two diodes doubler circuit, two
diodes common cathode, two diodes
common anode, single diode
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heat sink
MECHANICAL DESCRIPTION
The ADD-A-PAK Gen 7, new generation of ADD-A-PAK
module, combines the excellent thermal performances
obtained by the usage of exposed direct bonded copper
substrate, with advanced compact simple package solution
and simplified internal structure with minimized number of
interfaces.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
t
V
RRM
T
J
T
Stg
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
114 °C
VALUES
60
94
1300
1360
8.44
7.68
84.5
400 to 1600
-40 to +150
-40 to +150
kA
2
s
kA
2
s
V
°C
°C
A
UNITS
Revision: 05-Apr-16
Document Number: 94625
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56..
www.vishay.com
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
08
VS-VSK.56
10
12
14
16
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
10
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 90 °C case temperature
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
60
114
94
1300
1360
1090
Sinusoidal half wave,
initial T
J
= T
J
maximum
1140
8.44
7.68
5.97
5.43
84.5
0.74
0.86
3.94
m
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
FM
=
x I
F(AV)
, T
J
= 25 °C, t
p
= 400 μs square wave
3.43
1.6
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
Maximum RMS insulation voltage
SYMBOL
I
RRM
V
INS
T
J
= 150 °C
50 Hz
TEST CONDITIONS
VALUES
10
3000 (1 min)
3600 (1 s)
UNITS
mA
V
Revision: 05-Apr-16
Document Number: 94625
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56..
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heat sink per module
to heatsink
Mounting torque ± 10 %
busbar
Approximate weight
Case style
JEDEC
®
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
TEST CONDITIONS
VALUES
-40 to +150
0.33
°C/W
0.1
4
Nm
3
75
2.7
g
oz.
UNITS
°C
ADD-A-PAK Gen 7 (TO-240AA)
R
CONDUCTION PER JUNCTION
DEVICES
VSK.56
SINE HALF WAVE CONDUCTION
180°
0.115
120°
0.136
90°
0.173
60°
0.236
30°
0.346
180°
0.09
RECTANGULAR WAVE CONDUCTION
120°
0.145
90°
0.185
60°
0.243
30°
0.349
UNITS
°C/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 05-Apr-16
Document Number: 94625
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56..
www.vishay.com
Vishay Semiconductors
Maximum average forward power loss (W)
Maximum allowable case temperature (°C)
150
RthJC (DC) = 0.33°C/W
120
100
80
60
40
20
Per leg, Tj = 150°C
140
180°
120°
90°
60°
30°
130
DC
RMS limit
120
180°
120°
90°
60°
30°
110
100
0
10
20
30
40
50
60
70
Average forward current (A)
0
0
20
40
60
80
100
Average forward current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Foward Power Loss Characteristics
Maximum allowable case temperature (°C)
Peak half sine wave forward current (A)
150
RthJC (DC) = 0.33°C/W
1200
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
140
1000
130
DC
180°
120°
90°
60°
30°
800
120
600
110
400
Per leg
100
0
20
40
60
80
100
Average forward current (A)
200
1
10
100
Number of equal amplitude half cycle current pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum average forward power loss (W)
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
Average forward current (A)
Peak half sine wave forward current (A)
180°
120°
90°
60°
30°
1400
1200
1000
800
600
400
200
0.01
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 150°C
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
Per leg
Per leg, Tj = 150°C
0.1
Pulse train duration (s)
1
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 05-Apr-16
Document Number: 94625
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56..
www.vishay.com
120
Maximum total forward power loss (W)
Vishay Semiconductors
0
0
180°
(Sine)
RthSA = 0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
3 °C/W
7 °C/W
100
80
60
40
20
0
0
20
40
60
80
Total RMS output current (A)
0
DC
0
0
VSK.56 Series
0
Per leg,
Tj = 150°C
0
100 20
0
40
60
80 100 120 140 160
Maximum allowable ambient temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
500
Maximum total power loss (W)
180°
(sine)
180°
(rect)
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
400
300
200
100
2 x VSK.56 Series
single phase bridge connected
Tj = 150°C
0
0
20
40
60
80 100 120 140 160
20
0
40
60
80 100 120 140 160
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
500
Maximum total power loss (W)
400
120°
(rect)
300
RthSA = 0.3°C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
200
100
3 x VSK.56 Series
three phase bridge connected
Tj = 150°C
0
0
20
40
60
80 100 120 140 160
20
0
40
60
80 100 120 140 160
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig. 9 - Forward Power Loss Characteristics
Revision: 05-Apr-16
Document Number: 94625
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
