ESD Diodes
MAZMxxxH Series
Silicon planar type
1.60
±0.05
Unit: mm
0.55
±0.05
For surge absorption circuit
1.60
±0.05
1.20
±0.05
1.00
±0.05
5
4
1.20
±0.05
1.60
±0.05
■
Features
•
Four elements anode-common type
•
Power dissipation P
D
: 150 mW
1
2
3
5°
0.10
±0.03
0.20
±0.05
Power dissipation
*
Junction temperature
Storage temperature
P
D
T
j
T
stg
150
150
−55
to
+150
mW
°C
°C
Note) *: P
D
= 150 mW achieved with a printed circuit board.
1 : Cathode 1
4 : Cathode 3
2 : Anode 1, 2, 3, 4 5 : Cathode 4
3 : Cathode 2
SSMini5-F1 Package
Internally connected circuit
5
4
1
0
∼
0.01
Parameter
Symbol
Rating
Unit
2
3
■
Common Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Zener voltage
*
Zener rise operating resistance
Zener operating resistance
Reverse current
Symbol
V
Z
R
ZK
R
Z
I
R
I
Z
I
Z
I
Z
V
R
Conditions
Specified value
Specified value
Specified value
Specified value
Refer to the list of the
electrical characteristics
within part numbers
Min
Typ
Max
Unit
V
Ω
Ω
µA
Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage is
±10
kV
Test method: IEC1000-4-2 (C
=
150 pF, R
=
330
Ω,
Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
V
Z
guaranted 20 ms after current flow.
(0.15)
■
Absolute Maximum Ratings
T
a
=
25°C
5°
Publication date: November 2004
SKE00021AED
1
MAZMxxxH Series
■
Electrical characteristics within part numbers
T
a
= 25°C
±
3°C
Zener voltage
Part number
Min
MAZM062H
MAZM068H
MAZM082H
MAZM100H
MAZM120H
5.8
6.4
7.7
9.4
11.4
V
Z
(V)
Nom
6.2
6.8
8.2
10.0
12.0
Max
6.6
7.2
8.7
10.6
12.7
I
Z
(mA)
5
5
5
5
5
Zener Zener rise
Reverse current
operating operating
(DC)
resistance resistance
I
R
(µA)
R
Z
(Ω) R
ZK
(Ω)
V
R
I
Z
=
5 mA I
Z
=
0.5 mA
Max
(V)
Max
Max
0.2
0.1
0.1
0.05
0.05
4
4
5
7
9
50
30
30
30
30
100
60
60
60
80
Marking symbol
6.2Z
6.8Z
8.2Z
10Z
12Z
P
D
T
a
250
10 mm 10 mm
0.8 mm
Cu foil
t
=
0.035 mm
10
2
T
a
=
25°C
I
Z
V
Z
10
2
T
a
=
25°C
I
F
V
F
Power dissipation P
D
(mW)
200
10
150
1
Forward current I
F
(mA)
Zener current I
Z
(mA)
10
1
100
10
−1
MAZM062H
MAZM068H
MAZM082H
MAZM100H
MAZM120H
10
−1
50
10
−2
0
0
50
100
150
200
250
10
−3
10
−2
4
6
8
10
12
14
0
0.4
0.8
1.2
Ambient temperature T
a
(
°C
)
Zener voltage V
Z
(V)
Forward voltage V
F
(V)
R
Z
I
Z
T
a
=
25°C
MAZM062H
MAZM120H
10
MAZM100H
MAZM082H
MAZM068H
S
Z
I
Z
Temperature coefficient of zener voltage S
Z
(mV /
°C
)
12
T
a
=
25°C to 150°C
MAZM120H
C
t
V
R
30
T
a
=
25°C
10
2
Zener operating resistance R
Z
(
Ω
)
10
8
Terminal capacitance C
t
(pF)
MAZM100H
20
MAZM068H
6
MAZM082H
1
4
MAZM068H
10
MAZM062H
MAZM082H
MAZM100H
MAZM120H
2
MAZM062H
10
−1
1
10
10
2
0
0
10
20
30
40
50
60
0
0
4
8
12
Zener current I
Z
(mA)
Zener current I
Z
(mA)
Reverse voltage V
R
(V)
2
SKE00021AED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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