SUP90N06-05L
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
FEATURES
r
DS(on)
(W)
I
D
(A)
90
a
0.0049 @ V
GS
= 10 V
0.0055 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
APPLICATIONS
D
Automotive Such As
−
High-Side Switch
−
Motor Drives
−
12-V Battery
D
Synchronous Rectification
TO-220AB
D
DRAIN connected to TAB
G
G D S
Top View
Ordering Information: SUP90N06-05L—E3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
60
"20
90
a
90
a
240
75
280
300
b
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (Free Air)
Junction-to-Case
Notes
a. Package limited.
b. See SOA curve for voltage derating.
Document Number: 73037
S-41504—Rev. A, 09-Aug-04
www.vishay.com
Symbol
R
thJA
R
thJC
Limit
62.5
0.5
Unit
_C/W
1
SUP90N06-05L
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
120
0.0039
0.0044
0.0049
0.0055
0.0083
0.0103
S
W
60
1
3
"100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 0.33
W
I
D
^
90 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 30 V, V
GS
= 10 V, I
D
= 90 A
,
,
f = 1.0 MHz
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
12900
1060
700
1.3
200
50
33
22
130
110
280
35
200
165
420
ns
300
nC
W
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 90 A, V
GS
= 0 V
I
F
= 90 A, di/dt = 100 A/
A
A/ms
1.1
55
3.6
0.1
90
240
1.5
82
5.4
0.22
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 73037
S-41504—Rev. A, 09-Aug-04
SUP90N06-05L
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 5 V
200
I
D
−
Drain Current (A)
4V
I
D
−
Drain Current (A)
200
250
Vishay Siliconix
Transfer Characteristics
150
150
100
100
T
C
= 125_C
50
25_C
−55_C
50
3V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
−
Gate-to-Source Voltage (V)
Transconductance
480
400
g
fs
−
Transconductance (S)
320
240
160
80
0
0
20
40
60
80
100
125_C
T
C
=
−55_C
r
DS(on)
−
On-Resistance (
W
)
25_C
0.006
0.008
On-Resistance vs. Drain Current
V
GS
= 4.5 V
0.004
V
GS
= 10 V
0.002
0.000
0
20
40
60
80
100
120
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
18000
15000
C
−
Capacitance (pF)
12000
9000
6000
3000
0
0
C
rss
5
10
Capacitance
20
V
GS
= 30 V
I
D
= 90 A
Gate Charge
C
iss
V
GS
−
Gate-to-Source Voltage (V)
16
12
8
4
C
oss
0
15
20
25
30
35
40
0
50
100
150
200
250
300
350
400
V
DS
−
Drain-to-Source Voltage (V)
Q
g
−
Total Gate Charge (nC)
www.vishay.com
Document Number: 73037
S-41504—Rev. A, 09-Aug-04
3
SUP90N06-05L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
100
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
−50
1
0
I
S
−
Source Current (A)
V
GS
= 10 V
I
D
= 30 A
Source-Drain Diode Forward Voltage
r
DS(on)
−
On-Resiistance
(Normalized)
T
J
= 150_C
10
T
J
= 25_C
−25
0
25
50
75
100
125
150
175
0.3
0.6
0.9
1.2
T
J
−
Junction Temperature (_C)
V
SD
−
Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
74
72
100
I
Dav
(a)
I
AV
(A) @ T
A
= 25_C
V
(BR)DSS
(V)
I
D
= 10 mA
70
68
66
64
62
10
1
I
AV
(A) @ T
A
= 150_C
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(Sec)
60
−50
−25
0
25
50
75
100
125
150
175
T
J
−
Junction Temperature (_C)
www.vishay.com
4
Document Number: 73037
S-41504—Rev. A, 09-Aug-04
SUP90N06-05L
New Product
THERMAL RATINGS
200
Vishay Siliconix
Maximum Drain Current vs. Case Temperature
1000
Safe Operating Area
10
ms
160
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
100
Limited
by r
DS(on)
100
ms
120
10
80
Limited
by Package
1 ms
10 ms, 100 ms,
dc
1
T
C
= 25_C
Single Pulse
40
0
0
25
50
75
100
125
150
175
T
C
−
Case Temperature (_C)
0.1
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
10
−4
10
−3
10
−2
Square Wave Pulse Duration (sec)
10
−1
1
Document Number: 73037
S-41504—Rev. A, 09-Aug-04
www.vishay.com
5
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