FastIRFET™
IRFHM4231TRPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
(@ V
GS
= 4.5V)
Qg
(typical)
(@T
C (Bottom)
= 25°C)
I
D
25
3.4
4.6
9.7
40
nC
A
PQFN 3.3 x 3.3 mm
V
m
Applications
Control MOSFET for synchronous buck converter
Features
Low Charge (typical 9.7nC)
Low R
DSon
(<3.4m)
Low Thermal Resistance to PCB (<4.3°C/W)
Low Profile (<0.9mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Low Switching Losses
Lower Conduction Losses
Enable better Thermal Dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Base part number
IRFHM4231PbF
Package Type
PQFN 3.3mm x 3.3mm
Orderable Part Number
IRFHM4231TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
22
Units
V
72
46
40
288
2.7
29
0.021
-55 to + 150
W/°C
°C
W
A
Notes
through
are on page 9
1
2016-2-26
IRFHM4231TRPbF
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
22
2.7
3.7
1.6
-5.4
–––
–––
–––
–––
20
9.7
1.9
1.2
3.6
3.0
4.8
9.6
1.4
8.7
28
12
5.9
1270
360
97
Max.
–––
–––
3.4
4.6
2.1
–––
1.0
100
-100
–––
–––
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 30A
m
V
GS
= 4.5V, I
D
= 30A
V
V = V
GS
, I
D
= 35µA
mV/°C
DS
µA V
DS
= 20V, V
GS
= 0V
V
GS
= 20V
nA
V
GS
= -20V
S
V
DS
= 10V, I
D
= 30A
nC V
GS
= 10V, V
DS
= 13V, I
D
= 30A
nC
nC
ns
pF
V
DS
= 13V
V
GS
= 4.5V
I
D
= 30A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
BV
DSS
/T
J
R
DS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Thermal Resistance
Parameter
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
V
GS(th)
V
GS(th)
I
DSS
I
GSS
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 30A
R
G
=1.8
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Typ.
Max.
Units
42
mJ
–––
30
A
–––
Min.
Typ.
Max. Units
Conditions
MOSFET symbol
–––
–––
40
showing the
A
integral reverse
–––
–––
288
p-n junction diode.
–––
–––
1.0
V
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
–––
16
24
ns T
J
= 25°C, I
F
= 30A, V
DD
= 13V
–––
13
20
nC di/dt = 280A/µs
D
G
S
Typ.
–––
–––
–––
–––
Max.
4.3
37
47
31
Units
°C/W
2
2016-2-26
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
IRFHM4231TRPbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
2.75V
10
10
2.75V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 30A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 150°C
10
TJ = 25°C
V DS = 10V
60µs PULSE WIDTH
1.0
1.0
2.0
3.0
4.0
5.0
6.0
V GS, Gate-to-Source Voltage (V)
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 30A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
10000
C, Capacitance (pF)
V DS= 20V
V DS= 13V
V DS= 5.0V
1000
Ciss
Coss
Crss
100
10
1
10
V DS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-2-26
1000
IRFHM4231TRPbF
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
TJ = 150°C
10
TJ = 25°C
1
V GS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V SD, Source-to-Drain Voltage (V)
100
100µsec
Limited by package
1msec
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
DC
10
1
0.01
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
80
Fig 8.
Maximum Safe Operating Area
2.2
VGS(th), Gate threshold Voltage (V)
Limited by package
60
ID, Drain Current (A)
1.8
40
1.4
ID = 35µA
ID = 250µA
ID = 1.0mA
ID = 1.0mA
20
1.0
0
25
50
75
100
125
150
TC , Case Temperature (°C)
0.6
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Drain-to-Source Breakdown Voltage
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-2-26
RDS(on), Drain-to -Source On Resistance (m
)
IRFHM4231TRPbF
10.0
EAS , Single Pulse Avalanche Energy (mJ)
200
ID = 30A
ID
TOP
6.8A
13A
BOTTOM 30A
8.0
160
120
6.0
TJ = 125°C
4.0
TJ = 25°C
2.0
2
4
6
8
10
12
14
16
18
20
80
40
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
V GS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulse Width
5
2016-2-26
stm32/stm8
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