PSMN1R5-30BLE
12 October 2012
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
•
Enhanced forward biased safe operating area for superior linear mode operation
•
Very low Rdson for low conduction losses
1.3 Applications
•
Electronic fuse
•
Hot swap
•
Load switch
•
Soft start
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
V
GS
= 4.5 V; I
D
= 25 A; V
DS
= 15 V;
Fig. 14; Fig. 15
V
GS
= 10 V; I
D
= 25 A; V
DS
= 15 V;
Fig. 14; Fig. 15
-
228
-
nC
-
33.2
-
nC
-
1.7
1.85
mΩ
[1]
Min
-
-
-
Typ
-
-
-
Max
30
120
401
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
1.3
1.5
mΩ
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NXP Semiconductors
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
Symbol
E
DS(AL)S
Parameter
non-repetitive drain-
source avalanche
energy
[1]
Conditions
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 120 A;
V
sup
≤ 30 V; unclamped; R
GS
= 50 Ω;
Fig. 3
Min
-
Typ
-
Max
1990
Unit
mJ
Avalanche ruggedness
Capped at 120A due to package
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to
drain
2
1
3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
[1]
It is not possible to make connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN1R5-30BLE
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Marking
Table 4.
Marking codes
Marking code
PSMN1R5-30BLE
Type number
PSMN1R5-30BLE
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
PSMN1R5-30BLE
Parameter
drain-source voltage
drain-gate voltage
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
j
≤ 175 °C; T
j
≥ 25 °C; R
GS
= 20 kΩ
All information provided in this document is subject to legal disclaimers.
Min
-
-
Max
30
30
Unit
V
V
2 / 13
© NXP B.V. 2012. All rights reserved
Product data sheet
12 October 2012
NXP Semiconductors
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
Symbol
V
GS
I
D
Parameter
gate-source voltage
drain current
Conditions
V
GS
= 10 V; T
mb
= 100 °C;
Fig. 1
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
Min
-20
[1]
[1]
Max
20
120
120
1521
401
175
175
260
Unit
V
A
A
A
W
°C
°C
°C
-
-
-
-
-55
-55
-
I
DM
P
tot
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 4
T
mb
= 25 °C;
Fig. 2
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 120 A;
V
sup
≤ 30 V; unclamped; R
GS
= 50 Ω;
Fig. 3
[1]
400
I
D
(A)
300
80
[1]
-
-
120
1521
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
-
1990
mJ
Capped at 120A due to package
003aaj351
120
P
der
(%)
03aa16
200
(1)
40
100
0
0
50
100
150
T
mb
(° C)
200
0
0
50
100
150
T
mb
(°C)
200
(1) Capped at 120A due to package
Fig. 1.
Continuous drain current as a function of
mounting base temperature
Fig. 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
12 October 2012
3 / 13
NXP Semiconductors
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
10
3
003aaj359
I
AL
(A)
10
2
(1)
(2)
10
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig. 3.
Single pulse avalanche rating; avalanche current as a function of avalanche time
10
4
I
D
(A)
10
3
003aaj352
Limit R
DSon
= V
DS
/ I
D
100 µ s
t
p
=10 µ s
1 ms
DC
10
2
10
10 ms
100 ms
1
10
-1
1
10
V
DS
(V)
10
2
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Min
-
Typ
0.3
Max
0.37
Unit
K/W
R
th(j-a)
minimum footprint; FR4 board
-
50
-
K/W
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
12 October 2012
4 / 13
NXP Semiconductors
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
1
Z
th(j-mb)
(K/W)
10
-1
003aaj353
δ = 0.5
0.2
0.1
0.05
P
δ=
t
p
T
10
-2
0.02
10
-3
10
-6
single shot
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
t
T
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 11; Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 10
I
DSS
drain leakage current
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 100 °C
I
GSS
gate leakage current
V
GS
= 16 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -16 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
Fig. 12; Fig. 13
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
Fig. 12; Fig. 13
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Min
27
30
0.5
1.3
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.7
-
0.5
-
10
10
1.3
-
1.7
-
Max
-
-
-
2.15
2.45
10
200
100
100
1.5
2.1
1.85
2.9
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
V
GS(th)
Product data sheet
12 October 2012
5 / 13
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