Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
8 D
7 S
6 S
5 D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
Si6463BDQ
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.35
1.5
1.0
- 55 to 150
- 7.4
- 5.9
- 30
- 0.95
1.05
0.67
W
°C
10 s
±8
- 6.2
- 4.9
A
Steady State
- 20
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
65
100
46
Maximum
83
120
56
°C/W
Unit
Document Number: 72018
S10-2138-Rev. C, 20-Sep-10
www.vishay.com
1
Si6463BDQ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.3 A, dI/dt = 100 A/µs
V
DD
= - 10 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
V
DS
= - 10 V, V
GS
= - 5 V, I
D
= - 7.4 A
40
5.2
8
35
40
190
90
75
55
60
300
150
120
ns
60
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
= - 5 V, V
GS
= - 4.5 V
V
GS
½
- 4.5 V, I
D
= - 7.4 A
V
GS
= - 2.5 V, I
D
= - 6.3 A
V
GS
= - 1.8 V, I
D
= - 5.5 A
V
DS
= - 15 V, I
D
= - 7.4 A
I
S
= - 1.3 A, V
GS
= 0 V
- 20
0.011
0.015
0.020
34
- 0.64
- 1.1
0.015
0.020
0.027
S
V
- 0.45
- 0.8
± 100
-1
- 10
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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