PD - 97644
AUTOMOTIVE GRADE
AUIRFR3806
60V
12.6m
Ω
15.8m
Ω
43A
Features
●
●
●
●
●
●
●
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HEXFET
®
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
D
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
S
G
D-Pak
AUIRFR3806
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Max.
43
31
170
71
0.47
± 20
73
25
7.1
24
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
c
d
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
e
f
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
j
Parameter
Typ.
–––
0.50
–––
Max.
2.12
–––
62
Units
°C/W
i
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
03/11/11
AUIRFR3806
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
R
G(int)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
60
–––
–––
2.0
41
–––
Conditions
––– –––
0.075 –––
12.6 15.8
–––
4.0
––– –––
0.79
–––
–––
–––
–––
–––
20
250
100
-100
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 25A
V V
DS
= V
GS
, I
D
= 50μA
S V
DS
= 10V, I
D
= 25A
f
Ω
–––
–––
–––
–––
μA
nA
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
22
5.0
6.3
28.3
6.3
40
49
47
1150
130
67
190
230
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 25A
V
DS
= 30V
V
GS
= 10V
I
D
= 25A, V
DS
=0V, V
GS
= 10V
V
DD
= 39V
I
D
= 25A
R
G
= 20Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
f
ns
f
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
g
hÃ
pF
h
g
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
43
170
A
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
22
33
ns
–––
26
39
–––
17
26
nC
T
J
= 125°C
–––
24
36
–––
1.4
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
T
J
= 25°C
V
R
= 51V,
T
J
= 125°C
I
F
= 25A
di/dt = 100A/μs
T
J
= 25°C
f
f
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.23mH
R
G
= 25Ω, I
AS
= 25A, V
GS
=10V. Part not recommended for
use above this value.
I
SD
≤
25A, di/dt
≤
1580A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
2
www.irf.com
AUIRFR3806
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D-PAK
MSL1
Class M3 (+/- 250V)
AEC-Q101-002
†††
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Class H1A (+/- 500V)
AEC-Q101-001
Class C5 (+/- 2000V)
AEC-Q101-005
Yes
†††
†††
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
www.irf.com
3
AUIRFR3806
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
4.5V
10
4.5V
≤
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
ID = 25A
VGS = 10V
2.0
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
1
VDS = 25V
≤
60μs PULSE WIDTH
0.1
2
3
4
5
6
7
8
9
(Normalized)
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
12.0
ID= 25A
VGS , Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 48V
VDS= 30V
VDS= 12V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
4
www.irf.com
AUIRFR3806
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 175°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
100μsec
10
10msec
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VDS, Drain-to-Source Voltage (V)
100
DC
Fig 7.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
45
40
35
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
80
Id = 5mA
75
30
25
20
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
70
65
60
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
0.4
0.3
0.3
Energy (μJ)
Fig 10.
Drain-to-Source Breakdown Voltage
300
EAS , Single Pulse Avalanche Energy (mJ)
250
200
150
100
50
0
ID
TOP
2.8A
5.1A
BOTTOM 25A
0.2
0.2
0.1
0.1
0.0
-10
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
www.irf.com
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
5
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