BUK763R6-40C
N-channel TrenchMOS standard level FET
Rev. 04 — 16 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
Nexperia
BUK763R6-40C
N-channel TrenchMOS standard level FET
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
40
100
203
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C;
see
Figure 11;
see
Figure 12
-
3
3.6
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 100 A; V
sup
≤
40 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge V
GS
= 10 V; I
D
= 25 A;
V
DS
= 32 V; T
j
= 25 °C;
see
Figure 14;
see
Figure 13
-
-
292
mJ
Dynamic characteristics
Q
GD
-
35
-
nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK763R6-40C
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
BUK763R6-40C
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 16 June 2010
2 of 14
Nexperia
BUK763R6-40C
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source
avalanche energy
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
I
D
= 100 A; V
sup
≤
40 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[3]
[2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
[1]
[2]
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
40
40
20
167
100
100
668
203
175
175
100
167
668
292
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
[3]
[3]
T
mb
= 25 °C; t
p
≤
10 µs; pulsed;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
[3]
-20V accumulated duration not to exceed 168 hrs.
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
BUK763R6-40C
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 16 June 2010
3 of 14
Nexperia
BUK763R6-40C
N-channel TrenchMOS standard level FET
200
I
D
(A)
150
003aad365
120
P
der
(%)
80
03na19
100
Capped at 100 A due to package
50
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
10
3
Limit R
DSon
= V
DS
/I
D
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aac911
I
D
(A)
t
p
= 10
µs
2
10
100
µs
10
DC
1 ms
10 ms
1
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
BUK763R6-40C
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 16 June 2010
4 of 14
Nexperia
BUK763R6-40C
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see
Figure 4
Min
-
Typ
-
Max
0.74
Unit
K/W
R
th(j-a)
mounted on printed circuit board;
minimum footprint; SOT404 package
-
-
50
K/W
1
Z
th (j-mb)
(K/W)
δ
= 0.5
0.2
10
-1
003aac590
0.1
0.05
0.02
t
p
T
10
-2
P
single pulse
δ
=
t
p
T
t
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK763R6-40C
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 16 June 2010
5 of 14
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