Si4822DY
Vishay Siliconix
N-Channel Reduced Q
g
, Fast Swithcing MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.010 @ V
GS
= 10 V
0.015 @ V
GS
= 4.5 V
I
D
(A)
"12.0
"9.9
D
SO-8
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
S
N-Channel MOSFET
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
"12.0
"9.7
"80
2.3
2.5
1.6
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
t
v
10 sec
Steady State
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70789
S-56946—Rev. C, 23-Nov-98
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R
thJA
80
Symbol
Typical
Maximum
50
Unit
_C/W
2-1
Si4822DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12.0 A
V
GS
= 4.5 V, I
D
= 9.9 A
V
DS
= 15 V, I
D
= 12.0 A
I
S
= 2.3 A, V
GS
= 0 V
30
0.008
0.011
40
0.7
1.1
0.010
0.015
W
S
V
1.0
"100
1
5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.3 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
V,
I
D
^
1 A, V
GEN
= 10 V R
G
= 6
W
A
V,
V
DS
= 15 V, V
GS
= 5 0 V I
D
= 12.0 A
V
5.0 V,
12 0
31
15
10
20
20
75
45
50
40
40
150
90
90
ns
47
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70789
S-56946—Rev. C, 23-Nov-98
Si4822DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
80
80
Transfer Characteristics
60
I
D
– Drain Current (A)
V
GS
= 5 thru 10 V
4V
I
D
– Drain Current (A)
60
40
40
T
C
= 125_C
20
25_C
–55_C
0
20
2V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
3V
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
5000
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.04
C – Capacitance (pF)
4000
C
iss
3000
0.03
0.02
V
GS
= 4.5 V
0.01
V
GS
= 10 V
0
0
20
40
I
D
– Drain Current (A)
60
80
2000
C
oss
1000
C
rss
0
6
12
18
24
30
0
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 12.0 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 12.0 A
8
r
DS(on)
– On-Resistance (
W)
(Normalized)
20
30
40
50
60
1.4
6
1.2
4
1.0
2
0.8
0
0
10
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70789
S-56946—Rev. C, 23-Nov-98
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FaxBack 408-970-5600
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Si4822DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
80
0.020
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
T
J
= 25_C
r
DS(on)
– On-Resistance (
W
)
0.016
I
D
= 12.0 A
0.012
I
S
– Source Current (A)
0.008
0.004
1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.50
I
D
= 250
mA
50
Single Pulse Power
0.25
V
GS(th)
Variance (V)
40
0.00
Power (W)
30
–0.25
20
–0.50
10
–0.75
–1.0
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 80_C/W
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 70789
S-56946—Rev. C, 23-Nov-98
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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