VS-MBR7...PbF Series, VS-MBR7...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 7.5 A
FEATURES
Base
cathode
2
• 150 °C T
J
operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
TO-220AC
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AC
7.5 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
Single die
7 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-MBR7... Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
7.5 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
7.5
35/45
690
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse
voltage
SYMBOL
V
R
V
RWM
35
35
45
45
V
VS-MBR735PbF
VS-MBR735-N3
VS-MBR745PbF
VS-MBR745-N3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
I
F(AV)
TEST CONDITIONS
T
C
= 131 °C, rated V
R
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
I
FSM
Following any rated load
condition and with rated
V
RRM
applied
VALUES
7.5
690
A
150
7
2
mJ
A
UNITS
A
Surge applied at rated load condition half wave
single phase 60 Hz
Non-repetitive avalanche energy
Repetitive avalanche current
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 30-Aug-11
Document Number: 94299
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR7...PbF Series, VS-MBR7...-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
15 A
Maximum forward voltage drop
V
FM (1)
7.5 A
15 A
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
VALUES
0.84
0.57
0.72
0.1
15
400
8.0
1000
mA
pF
nH
V/µs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AC
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 65 to 150
- 65 to 175
3.0
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
MBR735
MBR745
Revision: 30-Aug-11
Document Number: 94299
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR7...PbF Series, VS-MBR7...-N3 Series
www.vishay.com
Vishay Semiconductors
100
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (mA)
10
1
0.1
0.01
0.001
0.0001
0
5
10
15
20
25
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.2
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
2.0
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
t
1
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 30-Aug-11
Document Number: 94299
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR7...PbF Series, VS-MBR7...-N3 Series
www.vishay.com
Vishay Semiconductors
150
7
Allowable Case Temperature (°C)
Average Power Loss (W)
6
5
4
140
DC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS limit
3
2
1
0
DC
130
Square
wave
(D = 0.50)
Rated
V
R
applied
See note (1)
120
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Revision: 30-Aug-11
Document Number: 94299
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR7...PbF Series, VS-MBR7...-N3 Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS- MBR
1
1
2
3
4
5
-
-
-
-
2
7
3
45
4
PbF
5
Vishay Semiconductors product
Schottky MBR series
Current rating (7.5 A)
Voltage ratings
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
35 = 35 V
45 = 45 V
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBR735PbF
VS-MBR735-N3
VS-MBR745PbF
VS-MBR745-N3
QUANTITY PER T/R
50
50
50
50
MINIMUM ORDER QUANTITY
1000
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-220AC PbF
TO-220AC -N3
www.vishay.com/doc?95221
www.vishay.com/doc?95224
www.vishay.com/doc?95068
www.vishay.com/doc?95298
Revision: 30-Aug-11
Document Number: 94299
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
