Data Sheet No. PD60029 revJ
IR2155&(PbF)
(NOTE: For new designs, we recommend IR’s new products
IR2153 and IR21531)
Features
•
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
Duty Cycle
I
O
+/-
V
OUT
Deadtime (typ.)
600V max.
50%
210 mA / 420 mA
10 - 20V
1.2
µs
•
•
•
•
•
•
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout
Programmable oscillator frequency
f
=
1
1.4
×
(R
T
+
150
Ω
)
×
C
T
Matched propagation delay for both channels
Micropower supply startup current of 125
µA
typ.
Low side output in phase with R
T
Available in Lead-Free
Package
Description
The IR2155 is a high voltage, high speed, self-
oscillating power MOSFET and IGBT driver with both
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technolo-
gies enable ruggedized monolithic construction.
The front end features a programmable oscillator
which is similar to the 555 timer. The output drivers
feature a high pulse current buffer stage and an in-
ternal deadtime designed for minimum driver cross-
conduction. Propagation delays for the two
channels are matched to simplify use in 50% duty
cycle applications. The floating channel can be
used to drive an N-channel power
8 Lead PDIP
MOSFET or IGBT in the high side configuration that
operates off a high voltage rail up to 600 volts.
Typical Connection
up to 600V
V
CC
R
T
C
T
COM
V
B
HO
V
S
LO
TO
LOAD
(Refer to Lead Assignment diagram for correct pin configuration)
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1
IR2155&(PbF)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
LO
V
RT
V
CT
I
CC
I
RT
dV
s
/dt
P
D
R
θJA
T
J
T
S
T
L
Parameter
Definition
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Output Voltage
R
T
Voltage
C
T
Voltage
Supply Current (Note 1)
R
T
Output Current
Allowable Offset Supply Voltage Transient
Package Power Dissipation @ T
A
≤
+25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
Value
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-0.3
—
-5
—
—
—
—
—
—
-55
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
25
5
50
1.0
0.625
125
200
150
150
300
Units
V
mA
V/ns
W
°C/W
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
Symbol
V
B
V
S
V
HO
V
LO
I
CC
T
A
Note 1:
Parameter
Definition
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Output Voltage
Supply Current (Note 1)
Ambient Temperature
Value
Min.
V
S
+ 10
—
V
S
0
—
-40
Max.
V
S
+ 20
600
V
B
V
CC
5
125
Units
V
mA
°C
Because of the IR2155’s application specificity toward off-line supply systems, this IC contains a zener clamp
structure between the chip V
CC
and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip V
CC
and the rectified line voltage and a local decoupling capacitor from
V
CC
to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There-
fore, this circuit should not be driven by a DC, low impedance power source of greater than V
CLAMP
.
2
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IR2155&(PbF)
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified.
Symbol
t
r
t
r
DT
D
Parameter
Definition
Turn-On Rise Time
Turn-Off Fall Time
Deadtime
R
T
Duty Cycle
Value
Min. Typ. Max. Units Test Conditions
—
—
0.50
48
80
40
1.20
50
120
70
2.25
52
ns
µs
%
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF, C
T
= 1 nF and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
Symbol
f
OSC
V
CLAMP
V
CT+
V
CT-
V
CTUV
V
RT+
V
RT-
V
RTUV
V
OH
V
OL
I
LK
I
QBS
I
QBSUV
I
QCC
I
QCCUV
I
CT
V
BSUV+
V
BSUV-
V
BSUVH
V
CCUV+
V
CCUV-
V
CCUVH
I
O+
I
O-
Parameter
Definition
Oscillator Frequency
V
CC
Zener Shunt Clamp Voltage
2/3 V
CC
Threshold
1/3 V
CC
Threshold
C
T
Undervoltage Lockout
R
T
High Level Output Voltage, V
CC
- R
T
R
T
Low Level Output Voltage
RT Undervoltage Lockout, V
CC
- R
T
High Level Output Voltage, V
BIAS
- V
O
Low Level Output Voltage, V
O
Offset Supply Leakage Current
Quiescent V
BS
Supply Current
Micropower V
BS
Supply Startup Current
Quiescent V
CC
Supply Current
Micropower V
CC
Supply Startup Current
C
T
Input Current
V
BS
Supply Undervoltage Positive Going
Threshold
V
BS
Supply Undervoltage Negative Going
Threshold
V
BS
Supply Undervoltage Lockout Hysteresis
V
CC
Supply Undervoltage Positive Going
Threshold
V
CC
Supply Undervoltage Negative Going
Threshold
V
CC
Supply Undervoltage Lockout Hysteresis
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
Value
Min. Typ. Max. Units Test Conditions
19.4
94
14.4
7.8
3.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.7
7.3
100
7.7
7.4
200
210
420
20.0
100
15.6
8.0
4.0
20
0
200
20
200
0
—
—
—
70
55
500
70
0.001
8.4
8.1
400
8.4
8.1
400
250
500
20.6
106
16.8
8.2
4.2
50
100
300
50
300
100
100
100
50
150
125
1000
150
1.0
9.2
8.9
—
9.2
8.9
—
—
—
kHz
R
T
= 35.7 kΩ
R
T
= 7.04 kΩ
I
CC
= 5 mA
V
2.5V < V
CC
< V
CCUV
I
RT
= -100
µA
I
RT
= -1 mA
I
RT
= 100
µA
I
RT
= 1 mA
2.5V < V
CC
< V
CCUV
I
O
= 0A
I
O
= 0A
V
B
= V
S
= 600V
mV
µA
V
mV
V
mV
mA
V
O
= 0V
V
O
= 15V
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3
IR2155&(PbF)
Functional Block Diagram
V
B
R
R
T
-
+
R
-
+
R
UV
DETECT
R
S
Q
Q
V
CC
15.6V
DEAD
TIME
LO
HV
LEVEL
SHIFT
UV
DETECT
PULSE
FILTER
R
R
S
Q
HO
DEAD
TIME
PULSE
GEN
V
S
C
T
DELAY
COM
Lead Definitions
Lead
Symbol Description
R
T
C
T
Oscillator timing resistor input,in phase with LO for normal IC operation
Oscillator timing capacitor input, the oscillator frequency according to the following equation:
f
=
V
B
HO
V
S
V
CC
LO
COM
1
1.4
×
(R
T
+
150
Ω
)
×
C
T
where 150Ω is the effective impedance of the R
T
output stage
High side floating supply
High side gate drive output
High side floating supply return
Low side and logic fixed supply
Low side gate drive output
Low side return
Lead Assignments
8 Lead DIP
IR2155
4
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IR2155&(PbF)
8 Lead PDIP
01-3003 01
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5
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