AUTOMOTIVE GRADE
AUIRLR2905
AUIRLU2905
HEXFET
®
Power MOSFET
D
•
•
•
•
•
•
•
•
•
•
Advanced Planar Technology
Logic-Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
V
(BR)DSS
R
DS(on)
max.
I
D
D
S
55V
27m
42A
G
S
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
D-Pak
AUIRLRU2905
G
D
G
I-Pak
AUIRLU2905
S
D
G
S
Gate
Drain
Source
Base part number Package Type
AUIRLR2905
Dpak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
Complete Part Number
AUIRLR2905
AUIRLR2905TR
AUIRLR2905TRL
AUIRLR2905TRR
AUIRLU2905
AUIRLU2905
Ipak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Max.
42
30
160
110
0.71
Units
A
W
W/°C
V
mJ
A
mJ
°C
Ã
h
d
± 16
210
200
25
11
-55 to + 175
300
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
www.irf.com
© 2012 International Rectifier
June 5, 2012 PD-97623A
AUIRLR/U2905
Thermal Resistance
R
JC
R
JA
R
JA
Junction-to-Case
h
Parameter
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
g
Min.
55
–––
–––
–––
–––
1.0
21
–––
–––
–––
–––
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Typ. Max. Units
–––
–––
0.070 –––
––– 0.027
––– 0.030
––– 0.040
–––
2.0
–––
–––
–––
25
–––
250
–––
100
–––
-100
Conditions
V
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
V
GS
= 5.0V, I
D
= 25A
V
GS
= 4.0V, I
D
= 21A
V
V
DS
= V
GS
, I
D
= 250μA
S
V
DS
= 25V, I
D
= 25A
μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
nA V
GS
= 16V
V
GS
= -16V
f
f
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
11
84
26
15
4.5
7.5
1700
400
150
48
8.6
25
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 25A
V
DS
= 44V
V
GS
= 5.0V
V
DD
= 28V
I
D
= 25A
R
G
= 3.4
V
GS
= 5.0V, R
D
= 1.1
Between lead,
f
ns
f
D
G
S
nH
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min.
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
5.0
80
210
42
A
160
1.3
–––
120
320
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
e
S
p-n junction diode.
V
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
V/ns T
J
= 175°C, I
S
= 25A, V
DS
= 55V
ns T
J
= 25°C, I
F
= 25A
nC di/dt = 100A/μs
f
Intrins ic turn-on time is negligible (turn-on is d
ominatedby L
S
+L
D
)
f
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L =470μH
R
G
= 25, I
AS
= 25A. (See Figure 12)
When mounted on 1" square PCB (FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
R
is measured at Tj approximately 90°C.
I
SD
25A, di/dt
270A/μs, V
DD
V
(BR)DSS
,
T
J
175°C
Pulse width 300μs; duty cycle
2%.
2
www.irf.com
© 2012 International Rectifier
June 6, 2012
AUIRLR/U2905
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
10
10
2.5V
2.5V
20μs PULSE WIDTH
T
J
= 25°C
1
10
1
0.1
100
A
1
0.1
20μs PULSE WIDTH
T
J
= 175°C
1
10
100
A
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 41A
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 25°C
100
2.0
T
J
= 175°C
1.5
10
1.0
0.5
1
2.0
3.0
4.0
5.0
V
DS
= 25V
20μs PULSE WIDTH
6.0
7.0
8.0
9.0
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
June 6, 2012
3
www.irf.com
© 2012 International Rectifier
AUIRLR/U2905
2800
2400
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
iss C
oss
= C
ds
+ C
gd
15
I
D
= 25A
V
DS
= 44V
V
DS
= 28V
12
C, Capacitance (pF)
2000
1600
9
1200
C
oss
6
800
C
rss
400
3
0
1
10
100
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
70
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
10μs
100
100μs
T
J
= 175°C
T
J
= 25°C
10
1ms
10
0.4
0.8
1.2
1.6
V
GS
= 0V
2.0
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
2.4
100
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
© 2012 International Rectifier
Fig 8.
Maximum Safe Operating Area
June 6, 2012
AUIRLR/U2905
50
V
DS
LIMITED BY PACKAGE
R
D
V
GS
R
G
D.U.T.
+
40
I
D
, Drain Current (A)
-
V
DD
30
5V
Pulse Width
µs
Duty Factor
20
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
www.irf.com
© 2012 International Rectifier
June 6, 2012
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
