Si3588DV
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
R
DS(on)
(Ω)
0.080 at V
GS
= 4.5 V
0.100 at V
GS
= 2.5 V
0.128 at V
GS
= 1.8 V
0.145 at V
GS
= - 4.5 V
P-Channel
- 20
0.200 at V
GS
= - 2.5 V
0.300 at V
GS
= - 1.8 V
I
D
(A)
3.0
2.6
2.3
- 2.2
- 1.8
- 1.5
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
G1
1
6
D1
D
1
S
2
3 mm
S2
2
5
S1
G
1
G
2
G2
3
4
D2
2.85 mm
S
1
Ordering Information:
Si3588DV-T1-E3 (Lead (Pb)-free)
Si3588DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.05
1.15
0.73
0.75
0.83
0.53
3.0
2.3
2.5
2.0
±8
- 1.05
1.15
0.73
- 55 to 150
- 0.75
0.083
0.53
W
°C
5s
Steady State
20
±8
- 2.2
- 1.8
- 0.57
- 1.5
A
5s
P-Channel
Steady State
- 20
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
93
130
90
Maximum
110
150
90
°C/W
Unit
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
www.vishay.com
1
Si3588DV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
a
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 3 A
V
GS
= - 4.5 V, I
D
= - 2.2 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 2.6 A
V
GS
= - 2.5 V, I
D
= - 1.8 A
V
GS
= 1.8 V, I
D
= 2.3 A
V
GS
= - 1.8 V, I
D
= - 1.0 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 2.2 A
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
0.5 A, V
GEN
= 4.5 V, R
g
= 6
Ω
P-Channel
V
DD
= - 4 V, R
L
= 8
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
I
F
= 1.05 A, dI/dt = 100 A/µs
I
F
= - 1.05 A, dI/dt = 100 A/µs
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
5
0.65
1.0
0.9
0.9
12
12
30
29
28
24
12
30
20
20
20
20
50
50
50
45
20
50
40
40
ns
7.5
7.5
nC
g
fs
V
SD
V
DS
= 5 V, I
D
= 3 A
V
DS
= - 5 V, I
D
= - 2.2 A
I
S
= 1.05 A, V
GS
= 0 V
I
S
= - 1.05 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
-5
0.064
0.115
0.080
0.163
0.104
0.240
9
5
0.8
- 0.8
1.1
- 1.1
0.080
0.145
0.100
0.200
0.128
0.300
S
V
Ω
0.45
- 0.45
± 100
± 100
1
-1
10
- 10
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
Si3588DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
8
25 °C, unless otherwise noted
10
T
C
= - 55 °C
V
GS
= 4.5 V thru 2 V
6
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
25 °C
6
125 °C
4
4
1.5 V
2
2
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.5
600
Transfer Characteristics
0.4
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
500
400
C
iss
300
0.3
0.2
V
GS
= 1.8 V
V
GS
= 2.5 V
0.1
V
GS
= 4.5 V
0.0
0
2
4
6
8
10
200
C
oss
C
rss
0
0
4
8
12
16
20
100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
1.8
1.6
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.2
1.0
0.8
0.6
0
0
1
2
3
4
5
0.4
- 50
Capacitance
V
GS
- Gate-to-Source Voltage (V)
4
V
DS
= 10 V
I
D
= 3.0 A
V
GS
= 4.5 V
I
D
= 3.0 A
3
2
1
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
www.vishay.com
3
Si3588DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
0.30
0.25
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.20
I
D
= 3.0 A
T
J
= 150 °C
1
T
J
= 25 °C
0.15
0.10
0.05
0.1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.2
I
D
= 250
µA
0.1
6
V
GS(th)
Variance (V)
0.0
Power (W)
8
On-Resistance vs. Gate-to-Source Voltage
- 0.1
4
- 0.2
2
- 0.3
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
Time (s)
1
10
30
T
J
- Temperature (°C)
Threshold Voltage
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Single Pulse Power, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 130 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
Si3588DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
8
10
T
C
= - 55 °C
8
I
D
- Drain Current (A)
25 °C
6
125 °C
4
V
GS
= 4.5 V thru 2.5 V
6
I
D
- Drain Current (A)
4
2V
2
1.5 V
2
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.75
600
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.60
C - Capacitance (pF)
500
C
iss
400
0.45
V
GS
= 1.8 V
0.30
V
GS
= 2.5 V
0.15
V
GS
= 4.5 V
300
200
C
oss
C
rss
0
4
8
12
16
20
100
0.00
0
2
4
I
D
- Drain Current (A)
6
8
0
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
Capacitance
www.vishay.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
